SS13HE3_A/I [VISHAY]
DIODE SCHOTTKY 30V 1A DO214AC;型号: | SS13HE3_A/I |
厂家: | VISHAY |
描述: | DIODE SCHOTTKY 30V 1A DO214AC |
文件: | 总5页 (文件大小:1146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SS12, SS13, SS14, SS15, SS16
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Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
Available
SMA (DO-214AC)
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
Cathode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3
D
TYPICAL APPLICATIONS
Design Tools
Related
Documents
3D Models
Simulation
Tools
Models
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
A
T
Application
Notes
Technical
Notes
Marking
MECHANICAL DATA
Case: SMA (DO-214AC)
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
IF(AV)
1.0 A
VRRM
IFSM
20 V, 30 V, 40 V, 50 V, 60 V
40 A
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
VF
0.50 V, 0.75 V
150 °C
TJ max.
Package
Circuit configuration
SMA (DO-214AC)
Single
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12
SS13
S3
SS14
S4
SS15
S5
SS16
S6
UNIT
Device marking code
S2
V
V
V
V
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
20
30
40
50
60
14
21
28
35
42
Maximum DC blocking voltage
Maximum average forward rectified current at TL (fig. 1)
20
30
40
50
60
IF(AV)
1.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dV/dt
TJ
10 000
V/μs
°C
-65 to +150
-65 to +150
TSTG
°C
Revision: 23-Apr-2020
Document Number: 88746
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12, SS13, SS14, SS15, SS16
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
SS12
SS13
SS14
SS15
SS16
UNIT
Maximum instantaneous forward
voltage
(1)
1.0 A
VF
IR
0.50
0.75
5.0
V
TA = 25 °C
0.2
Maximum DC reverse current at
rated DC blocking voltage
(2)
mA
TA = 100 °C
6.0
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12
SS13
SS14
88
SS15
SS16
UNIT
RθJA
Typical thermal resistance (1)
°C/W
RθJL
28
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
1800
DELIVERY MODE
SS16-E3/61T
0.064
61T
5AT
H
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SS16-E3/5AT
0.064
7500
SS16HE3_B/H (1)
SS16HE3_B/I (1)
SS16-M3/61T
0.064
1800
0.064
I
7500
0.064
61T
5AT
H
1800
SS16-M3/5AT
0.064
7500
SS16HM3_B/H (1)
SS16HM3_B/I (1)
0.064
1800
0.064
I
7500
Note
(1)
AEC-Q101 qualified
Revision: 23-Apr-2020
Document Number: 88746
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12, SS13, SS14, SS15, SS16
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
100
10
10000
1000
100
TJ = 150 °C
1.0
0.5
0
1
TJ = 125 °C
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0.0001
0.00001
0.000001
PCB Mounted on 0.2" x 0.2"
(5.0 mm x 5.0 mm) Copper Pad Area
SS12 thru SS16
TJ = -40 °C
10
0
25
50
75
100
125
150
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
50
40
30
20
10
0
1000
100
10
At Rated TL
8.3 ms Single Half Sine-Wave
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
SS12 thru SS14
SS15 and SS16
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
Axis Title
100
10
10000
1000
100
TJ = 150 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
0.01
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 23-Apr-2020
Document Number: 88746
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12, SS13, SS14, SS15, SS16
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
0.066 (1.68)
MAX.
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
0.012 (0.305)
0.006 (0.152)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 23-Apr-2020
Document Number: 88746
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
相关型号:
SS13HE3_B/I
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
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