SMM2312BDS-T1-GE3 [VISHAY]
TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal;
| 型号： | SMM2312BDS-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SMM2312BDS
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
• High Quality Manufacturing Process Using SMM
Process Flow
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω) at VGS = 4.5 V
RDS(on) (Ω) at VGS = 2.5 V
RDS(on) (Ω) at VGS = 1.8 V
ID (A)
0.031
0.037
0.047
5.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Configuration
Single
• 100 % UIS Tested
TO-236
(SOT-23)
• Compliant to RoHS Directive 2002/95/EC
• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
G
S
1
2
APPLICATION EXAMPLES
3
D
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
Top View
SMM2312BDS (MC)*
* Marking Code
- Other Implantable Devices
ORDERING INFORMATION
Package
SOT-23
Lead (Pb)-free and Halogen-free
SMM2312BDS-T1-GE3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
5 s
STEADY STATE
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
20
20
V
VGS
8
5.0
8
3.9
TA = 25 °C
A = 70 °C
Continuous Drain Current (TJ = 150 °C)a
ID
T
4.0
3.1
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Single Avalanche Currentb
IDM
IS
15
15
A
1.0
0.63
IAS
EAS
13
13
L = 0.1 mH
Single Avalanche Energy
8.45
8.45
mJ
W
TA = 25 °C
TA = 70 °C
1.25
0.75
Maximum Power Dissipationa
PD
0.80
0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
- 55 to + 150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
t ≤ 5 s
Maximum Junction-to-Ambienta
Steady State
80
120
50
100
166
60
RthJA
RthJF
°C/W
Maximum Junction-to-Foot
Notes
a. Surface mounted on 1" x 1" FR4 board.
Steady State
b. Pulse width limited by maximum junction temperature.
Document Number: 65463
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
1
New Product
SMM2312BDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
20
-
-
0.85
100
1
V
V
0.45
-
VDS = 0 V, VGS
=
8 V
-
-
-
-
nA
VGS = 0 V
VGS = 0 V
VDS = 20 V
VDS = 20 V, TJ = 70 °C
VDS ≥ 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
µA
A
-
-
75
ID(on)
VGS = 4.5 V
VGS = 4.5 V
15
-
-
-
ID = 5.0 A
0.025
0.030
0.036
30
0.031
0.037
0.047
-
Drain-Source On-State Resistancea
RDS(on)
V
V
GS = 2.5 V
GS = 1.8 V
ID = 4.6 A
-
Ω
ID = 4.1 A
-
Forward Transconductancea
Diode Forward Voltage
Dynamicb
gfs
VDS = 15 V, ID = 5.0 A
-
S
V
VSD
VGS = 0 V
IS = 1.0 A
-
0.8
1.2
Total Gate Charge
Qg
Qgs
Qgd
Rg
-
7.5
1.4
1.2
2.2
9
12
-
Gate-Source Charge
Gate-Drain Charge
V
GS = 4.5 V
VDS = 10 V, ID = 5.0 A
f = 1 MHz
-
nC
-
-
Gate Resistance
1.1
3.3
15
45
55
15
Ω
Turn-On Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
Rise Time
30
35
10
V
DD = 10 V, RL = 10 Ω
ns
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
Source-Drain Body Diode Characteristics
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
-
13
25
7
ns
IF = 1.0 A, dI/dt = 100 A/µs
Qrr
4.5
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
15
12
9
15
12
9
V
= 4.5 V thru 2.0 V
GS
1.5 V
6
6
T
C
= 125 °C
3
3
25 °C
1.0 V
- 55 °C
0
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0
1
2
3
4
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
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Document Number: 65463
S09-2018-Rev. A, 05-Oct-09
New Product
SMM2312BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1200
1000
800
600
400
200
0
0.06
0.05
0.04
0.03
0.02
0.01
0.00
C
iss
V
= 1.8 V
GS
V
= 2.5 V
= 4.5 V
GS
V
GS
C
4
oss
C
rss
0
8
12
16
20
0
3
6
9
12
15
I
D
- Drain Current (A)
V
- Drain-to-Source Voltage (V)
DS
Capacitance
On-Resistance vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
V
I
= 4.5 V
= 5.0 A
V
I
= 10 V
= 5.0 A
GS
D
DS
D
- 50 - 25
0
25
T - Junction Temperature (°C)
J
50
75
100 125 150
0
1
2
3
4
5
6
7
8
Q
- Total Gate Charge (nC)
g
Gate Charge
On-Resistance vs. Junction Temperature
20
10
0.20
0.15
0.10
0.05
0.00
T = 150 °C
J
I
D
= 5.0 A
1
T = 25 °C
J
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
V
- Source-to-Drain Voltage (V)
SD
V
- Gate-to-Source Voltage (V)
GS
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 65463
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
3
New Product
SMM2312BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.3
8
7
6
0.2
0.1
I
D
= 250 µA
5
4
3
0.0
T
A
= 25 °C
- 0.1
- 0.2
- 0.3
- 0.4
- 0.5
2
1
0
0.01
- 50 - 25
0
25
50
75
100 125 150
0.1
1
10
100
600
T - Temperature (°C)
J
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited
by R
DS(on)*
10 µs
10
1
100 µs
1 ms
10 ms
100 ms
0.1
10 s, 1 s
100 s, DC
T
= 25 °C
A
Single Pulse
0.01
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
* V
GS
> minimum V at which R
is specified
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 166 °C/W
thJA
(t)
Z
3. TJM - T = P
A
DM thJA
Single Pulse
-3
4. Surface Mounted
0.01
-4
10
-2
10
-1
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65463.
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Document Number: 65463
S09-2018-Rev. A, 05-Oct-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
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