SM8S30AHE32D [VISHAY]
Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions; 表面贴装PAR®瞬态电压抑制器高温稳定性和高可靠性的条件
| 型号： | SM8S30AHE32D |
| 厂家： | 
VISHAY |
| 描述： | Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
6600 W
5200 W
8 W
TYPICAL APPLICATIONS
P
PPM (10 x 1000 μs)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
P
PPM (10 x 10 000 μs)
PD
IFSM
700 A
TJ max.
175 °C
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
with 10/1000 μs waveform
Peak pulse power dissipation
6600
PPPM
PD
W
with 10/10 000 μs waveform
5200
8.0
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
W
A
(1)
IPPM
See next table
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
IFSM
700
A
TJ, TSTG
- 55 to + 175
°C
Note
(1)
Non-repetitive current pulse derated above TA = 25 °C
Revision: 14-Sep-11
Document Number: 88387
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM REVERSE
LEAKAGE
MAX. PEAK
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
PULSE CURRENT CLAMPING
DEVICE
TYPE
V
BR (V)
AT VWM
AT 10/1000 μs
WAVEFORM
(A)
VOLTAGE
AT IPPM
VC (V)
TJ = 175 °C
I
(mA)
(V)
MIN.
MAX.
ID (μA)
D (μA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
SM8S10
SM8S10A
SM8S11
SM8S11A
SM8S12
SM8S12A
SM8S13
SM8S13A
SM8S14
SM8S14A
SM8S15
SM8S15A
SM8S16
SM8S16A
SM8S17
SM8S17A
SM8S18
SM8S18A
SM8S20
SM8S20A
SM8S22
SM8S22A
SM8S24
SM8S24A
SM8S26
SM8S26A
SM8S28
SM8S28A
SM8S30
SM8S30A
SM8S33
SM8S33A
SM8S36
SM8S36A
SM8S40
SM8S40A
SM8S43
SM8S43A
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
351
388
328
363
300
332
277
307
256
284
245
270
229
254
216
239
205
226
184
204
168
186
153
170
142
157
132
145
123
136
112
124
103
114
92.4
102
86
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
40
43
43
95.1
Note
•
For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
Revision: 14-Sep-11
Document Number: 88387
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
0.90
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM8S10AHE3/2D (1)
2.605
2D
750
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
150
100
50
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
Half Value - IPP
IPPM
2
td
0
10
30
40
0
20
t - Time (ms)
50
150
200
0
100
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 3 - Pulse Waveform
6000
5000
4000
3000
2000
1000
0
10 000
1000
50
75
Case Temperature (°C)
150
175
100
25
100
125
10
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 2 - Load Dump Power Characteristics
Fig. 4 - Reverse Power Capability
(10 ms Exponential Waveform)
Revision: 14-Sep-11
Document Number: 88387
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SM8S10 thru SM8S43A
Vishay General Semiconductor
www.vishay.com
100
10
100 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
RθJA
RθJC
Measured at Zero Bias
10 000
1
0.1
Measured at Stand-Off
Voltage VWM
1000
0.01
10
15
20
25
30
35
40
45
0.01
0.1
1
10
100
VWM - Reverse Stand-Off Voltage (V)
t - Pulse Width (s)
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.366 (9.3)
0.343 (8.7)
0.382 (9.7)
Lead 1
0.606 (15.4)
0.583 (14.8)
0.197 (5.0)
0.185 (4.7)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Revision: 14-Sep-11
Document Number: 88387
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
Document Number: 91000
1
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