SM8S33 [UNSEMI]

用于汽车电子保护,可通过ISO7637-5A5B测试标准。;
SM8S33
型号: SM8S33
厂家: UN Semiconducctor INC    UN Semiconducctor INC
描述:

用于汽车电子保护,可通过ISO7637-5A5B测试标准。

二极管 测试 电子 局域网
文件: 总4页 (文件大小:2698K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Surface Mount Transient Voltage Suppressors (TVS)  
SM8S Series  
10 To 43 V  
6600W  
Description  
The SM8S series is designed specifically to protect sensitive  
electronic equipment from voltage transients induced by lightning  
and other transient voltage events.  
Features  
u
Junction passivation optimized design passivated anisotropic  
rectifier technology  
u
TJ=175°C capability suitable for high reliability and automotive  
requirement  
DO-218AB  
u
u
u
u
u
u
Available in uni-directional polarity only  
Low leakage current  
Functional Diagram  
Low forward voltage drop  
High surge capability  
Meets ISO7637-2 surge specification (varied by test condition)  
Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C  
Cathode  
Anode  
Uni-direction  
u
u
AEC-Q101 qualified  
Compliant to RoHS Directive 2002/95/EC and in accordance  
to WEEE 2002/96/EC  
Primary Characteristics  
VWM  
PPPM (10/1000µs)  
PPPM (10 /10000μs)  
PD  
10V to 43V  
Applications  
Use in sensitive electronics protection against voltage transients  
induced by inductive load switching and lighting, especially for  
automotive load dump protection application.  
6600W  
5200W  
8W  
IFSM  
700A  
TJ max.  
175°C  
Maximum Ratings and Thermal Characteristics (TA=25unless otherwise noted)  
Parameter  
with 10/1000µs waveform  
Symbol  
PPPM  
Value  
6600  
Unit  
Peak Pulse Power Dissipation  
Watts  
with 10/10000µs waveform  
5200  
Power Dissipation on Infinite Heat Sink at TA=25°C (Fig.1)  
Peak Pulse Current with a 10/1000µs waveform  
PD  
8.0  
Watt  
Amps  
Amps  
°C  
(1)  
IPPM  
See Next Table  
700  
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)  
Operating junction and Storage Temperature Range  
Typical thermal resistance, junction to case  
IFSM  
TJ , TSTG  
R θJC  
- 55 to + 175  
0.90  
°C /Watt  
Notes:  
1. Non-repetitive current pulse derated above TA=25°C  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Revision October 18, 2013  
1 / 4  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
Surface Mount Transient Voltage Suppressors (TVS)  
SM8S Series  
10 To 43 V  
6600W  
Electrical Characteristics (TA=25unless otherwise noted)  
Breakdown  
Voltage  
VBR (V)  
Maximum  
Reverse  
Leakage  
at VWM  
Maximum  
Reverse  
at VWM  
TJ=175°C  
ID(µA)  
Maximum Peak  
Pulse Current  
at 10/1000µs  
Waveform  
(A)  
Maximum  
Clamping  
Voltage  
at IPPM  
Stand-Off  
Voltage  
VMW  
Test  
Current  
IT  
Part Number  
(V)  
(mA)  
MIN.  
MAX.  
ID(µA)  
VC (V)  
SM8S10  
SM8S10A  
SM8S11  
SM8S11A  
SM8S12  
SM8S12A  
SM8S13  
SM8S13A  
SM8S14  
SM8S14A  
SM8S15  
SM8S15A  
SM8S16  
SM8S16A  
SM8S17  
SM8S17A  
SM8S18  
SM8S18A  
SM8S20  
SM8S20A  
SM8S22  
SM8S22A  
SM8S24  
SM8S24A  
SM8S26  
SM8S26A  
SM8S28  
SM8S28A  
SM8S30  
SM8S30A  
SM8S33  
SM8S33A  
SM8S36  
SM8S36A  
SM8S40  
SM8S40A  
SM8S43  
SM8S43A  
10.0  
10.0  
11.0  
11.0  
12.0  
12.0  
13.0  
13.0  
14.0  
14.0  
15.0  
15.0  
16.0  
16.0  
17.0  
17.0  
18.0  
18.0  
20.0  
20.0  
22.0  
22.0  
24.0  
24.0  
26.0  
26.0  
28.0  
28.0  
30.0  
30.0  
33.0  
33.0  
36.0  
36.0  
40.0  
40.0  
43.0  
43.0  
11.1  
11.1  
12.2  
12.2  
13.3  
13.3  
14.4  
14.4  
15.6  
15.6  
16.7  
16.7  
17.8  
17.8  
18.9  
18.9  
20.0  
20.0  
22.2  
22.2  
24.4  
24.4  
26.7  
26.7  
28.9  
28.9  
31.1  
31.1  
33.3  
33.3  
36.7  
36.7  
40.0  
40.0  
44.4  
44.4  
47.8  
47.8  
13.6  
12.3  
14.9  
13.5  
16.3  
14.7  
17.6  
15.9  
19.1  
17.2  
20.4  
18.5  
21.8  
19.7  
23.1  
20.9  
24.4  
22.1  
27.1  
24.5  
29.8  
26.9  
32.6  
29.5  
35.3  
31.9  
38.0  
34.4  
40.7  
36.8  
44.9  
40.6  
48.9  
44.2  
54.3  
49.1  
58.4  
52.8  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
15  
15  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
250  
250  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
351  
388  
328  
363  
300  
332  
277  
307  
256  
284  
245  
270  
229  
254  
216  
239  
205  
226  
184  
204  
168  
186  
153  
170  
142  
157  
132  
145  
123  
136  
112  
124  
103  
114  
92.4  
102  
86  
18.8  
17.0  
20.1  
18.2  
22.0  
19.9  
23.8  
21.5  
25.8  
23.2  
26.9  
24.4  
28.8  
26.0  
30.5  
27.6  
32.2  
29.2  
35.8  
32.4  
39.4  
35.5  
43.0  
38.9  
46.6  
42.1  
50.1  
45.4  
53.5  
48.4  
59.0  
53.3  
64.3  
58.1  
71.4  
64.5  
76.7  
69.4  
95.1  
Note:  
For all types maximum VF = 1.8V at IF = 100A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per  
minute maximum.  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
Revision October 18, 2013  
2 / 4  
Surface Mount Transient Voltage Suppressors (TVS)  
SM8S Series  
10 To 43 V  
6600W  
Ratings and Characteristic Curves (TA=25°C unless otherwise noted)  
Figure 1 Power Derating Curve  
Figure 2 - Load Dump Power Characteristics  
(10 ms Exponential Waveform)  
Figure 3 - Pulse Waveform  
Figure 4 Reverse Power Capability  
Figure 6 - Typical Junction Capacitance  
Figure 5 - Typical Transient Thermal Impedance  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
Revision October 18, 2013  
3 / 4  
Surface Mount Transient Voltage Suppressors (TVS)  
SM8S Series  
10 To 43 V  
6600W  
Mechanical Data  
DO-218AB Molding compound meets UL 94 V-0 flammability  
rating Base P/N HE3 - RoHS compliant, AEC-Q101 qualified  
Case  
Polarity  
Heat sink is anode  
Matte tin plated leads, solderable per J-STD-002 and JESD  
22-B102  
Terminal  
HE3 suffix meets JESD 201 class 2 whisker test  
Part Numbering  
S M 8 S × × × A  
5% VBR VOLTAGE TOLERANCE  
VR VOLTAGE  
SERIES  
Ordering Information (Example)  
Preferred P/N  
Unit Weight (g) Preferred Package Code  
2.605 2D  
Base Quantity  
Delivery Mode  
13" diameter plastic tape and reel,  
anode towards the sprocket hole  
SM8S10AHE3/2D(1)  
750  
Note:  
(1) AEC-Q101 qualified  
Package Outline Dimensions Unit: inches (millimeters)  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
Revision October 18, 2013  
4 / 4  

相关型号:

SM8S33-2E

Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB
VISHAY

SM8S33-T750

Trans Voltage Suppressor Diode
PROTEC

SM8S33A

Surface Mount Automotive Transient Voltage Suppressors
VISHAY

SM8S33A

用于汽车电子保护,可通过ISO7637-5A5B测试标准。
UNSEMI

SM8S33A

6600W patch TVS transient suppression diode DO-218 33V
SUNMATE

SM8S33A

暂无描述
LGE

SM8S33A

6600W Transient Voltage Suppressor
LEIDITECH

SM8S33A-2D

Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1
VISHAY

SM8S33A-E3/2D

Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1
VISHAY

SM8S33A-E3/2E

8W,33V 5%,SMD PAR
VISHAY

SM8S33A-LF-T13

Trans Voltage Suppressor Diode, 6600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB,
PROTEC

SM8S33A-Q

Trans Voltage Suppressor Diode,
BOURNS