SD553C30S50L_12 [VISHAY]
Fast Recovery Diodes (Hockey PUK Version), 560 A; 快恢复二极管（曲棍球PUK版） ， 560
| 型号： | SD553C30S50L_12 |
| 厂家： | 
VISHAY |
| 描述： | Fast Recovery Diodes (Hockey PUK Version), 560 A |
| 文件： | 总9页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD553C..S50L Series
Vishay High Power Products
Fast Recovery Diodes
(Hockey PUK Version), 560 A
FEATURES
• High power FAST recovery diode series
• 6.0 µs recovery time
RoHS
• High voltage ratings up to 4500 V
• High current capability
COMPLIANT
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
DO-200AB (B-PUK)
• Case style conform to JEDEC DO-200AB (B-PUK)
• Maximum junction temperature 125 °C
• Lead (Pb)-free
PRODUCT SUMMARY
TYPICAL APPLICATIONS
• Snubber diode for GTO
IF(AV)
560 A
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
TEST CONDITIONS
VALUES
560
PARAMETER
UNITS
A
°C
A
IF(AV)
Ths
Ths
55
1120
IF(RMS)
25
°C
50 Hz
60 Hz
50 Hz
60 Hz
Range
12 000
12 570
721
IFSM
A
I2t
kA2s
658
VRRM
trr
3000 to 4500
6.0
V
µs
TJ
125
°C
TJ
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 125 °C
mA
VOLTAGE
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
V
V
30
36
40
45
3000
3600
4000
4500
3100
3700
4100
4600
SD553C..S50L
75
Document Number: 93177
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
560 (210)
55 (85)
1120
UNITS
A
Maximum average forward current
at heatsink temperature
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
°C
Maximum RMS forward current
IF(RMS)
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
12 000
12 570
10 100
10 570
721
No voltage
reapplied
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
50 % VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
No voltage
reapplied
658
Maximum I2t for fusing
I2t
kA2s
510
50 % VRRM
reapplied
466
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
7210
kA2√s
Low level value of threshold voltage
High level value of threshold voltage
VF(TO)1
VF(TO)2
1.77
V
1.95
Low level value of forward
slope resistance
rf1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
0.98
mΩ
High level value of forward
slope resistance
rf2
(I > π x IF(AV)), TJ = TJ maximum
0.89
3.24
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TYPICAL VALUES
AT TJ = 125 °C
TEST CONDITIONS
IFM
Ipk
trr
CODE
t
rr AT 25 % IRRM
(µs)
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
Qrr
(µC)
Irr
(A)
t
rr AT 25 % IRRM
(µs)
t
dir
dt
Qrr
IRM(REC)
S50
5.0
1000
100
- 50
6.0
900
250
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
0.073
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance,
junction to heatsink
RthJ-hs
K/W
0.031
14 700
(1500)
N
(kg)
Mounting force, 10 %
Approximate weight
Case style
255
g
Conforms to JEDEC
DO-200AB (B-PUK)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93177
Revision: 14-May-08
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGLE
TEST CONDITIONS
UNITS
SINGLE SIDE
0.009
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
120°
90°
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
0.011
0.014
TJ = TJ maximum
K/W
60°
0.020
30°
0.036
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
1 3 0
1 2 0
1 1 0
1 0 0
9 0
13 0
12 0
11 0
10 0
9 0
S D 5 53C ..S 50L Se rie s
(D ou b le Sid e C o oled )
thJ-hs
S D 55 3C ..S50 L S e rie s
(S in g le Sid e C oo led )
th J- hs
R
(D C ) = 0.031 K /W
R
(D C ) = 0.073 K /W
Cond uction Angle
C ond uction Angle
8 0
8 0
7 0
7 0
6 0
30 °
6 0°
6 0
5 0
90°
120°
5 0
60°
90°
4 0
180°
30°
1 20°
1 80°
4 0
3 0
3 0
2 0
0
1 00
2 0 0
3 0 0
4 00
0
1 00 2 00 30 0 40 0 50 0 60 0 7 0 0 80 0
Av era g e Fo rw a r d C u rre n t ( A)
A ve ra g e F or w a rd C u rr en t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
1 3 0
1 2 0
1 1 0
1 0 0
9 0
130
120
110
100
90
SD 553C..S50L Series
(Double Side Cooled)
thJ-h s
SD 553C ..S 50L S eries
(Sin g le S id e C oo le d )
thJ-hs
R
(DC) = 0.031 K/W
R
( D C ) = 0.0 73 K/W
80
8 0
C ond uction Period
C ond uction Period
70
7 0
30°
6 0
60
50
60°
5 0
90°
3 0°
120°
6 0°
4 0
40
30
180°
90°
120°
3 0
2 0
20
10
D C
1000 1200
180 °
4 0 0
D C
5 00
1 0
0
200
400
600
800
0
1 00
20 0
3 0 0
6 00
Average Forw ard Current (A)
A ve ra g e F orw a r d C u rre n t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93177
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
2500
1 40 0 0
1 20 0 0
1 00 0 0
M ax im u m N on R e petitive Su rge C u rre nt
V ersu s P ulse T ra in D u ration .
2250
180°
In itial
T = 125°C
J
2000
1750
1500
1250
1000
750
120°
90°
N o V o lta g e Re ap plie d
50% R ated
V
R eap p lied
R RM
60°
RMS Limit
30°
80 0 0
60 0 0
40 0 0
20 0 0
Con duction An gle
500
SD553C..S50L Series
250
T = 125°C
J
S D 553C ..S 50 L S erie s
0 .1
0
0
100 200 300 400 500 600 700 800
Average Forw ard Current (A)
0 .0 1
1
P u lse T ra in D u ra tion (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 5 - Forward Power Loss Characteristics
3500
10000
DC
180°
120°
90°
3000
2500
2000
1500
1000
500
60°
T
= 25°C
30°
J
T
= 125°C
J
RMS Limit
1000
C ond uction Period
SD553C..S50L Series
J
SD553C..S50L Series
T
= 125°C
0
100
1.5
0
200
400
600
800
1000 1200
2
2.5
3
3.5
4
4.5
5
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 6 - Forward Power Loss Characteristics
0 .1
12 0 0 0
A t A n y R a te d Loa d C on d ition A n d W ith
50% R a ted Ap p lie d Fo llow in g S u rg e
V
R RM
11 0 0 0
10 0 0 0
9 0 0 0
8 0 0 0
7 0 0 0
6 0 0 0
5 0 0 0
4 0 0 0
3 0 0 0
SD 553 C ..S50 L S erie s
In itia l T
= 1 25 °C
J
@
@
60 H z 0 .0 083
50 H z 0 .0 100
s
s
0 .0 1
Ste a d y S ta te V a lu e
R
=
0.073 K /W
(Sin g le S id e C o ole d )
0.031 K /W
thJ-hs
R
=
thJ- hs
(D o ub le S id e C o ole d )
(D C O p e ra tio n )
S D 55 3C ..S5 0L S e rie s
10
0 .00 1
0. 00 1
1
1 0 0
0 .0 1
0 .1
1
1 0
10 0
Number Of Equa l Amp litude Ha lf Cycle C urren t Pulses (N)
Sq u a re W a ve P u lse D u ra tio n (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93177
Revision: 14-May-08
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
4 00
3 50
3 00
2 50
V
F P
I
T
=
125°C
J
2 00
1 50
1 00
T
= 25°C
J
50
0
SD 55 3C ..S 50L S eries
0
20 0
40 0
6 0 0
8 00
1 0 00
12 00
1 4 00
1 60 0
18 0 0
20 00
R ate O f R ise O f Fo rw a rd C u rren t - d i/d t (A /us)
Fig. 11 - Typical Forward Recovery Characteristics
1 0 .5
1 0
9. 5
9
8. 5
8
7. 5
7
6. 5
6
8 00
7 00
6 00
5 00
4 00
3 00
2 00
1 00
0
I
= 1500 A
FM
SD 553 C ..S50L Se rie s
1 25 ° C ; V 100V
Sin e Pulse
T
=
>
r
J
1000 A
500 A
I
= 15 00 A
FM
Sin e Pu lse
1000 A
500 A
5. 5
5
4. 5
4
SD 55 3C ..S50 L S er ies
1 25 °C ; V 100V
T
J
=
>
r
1 0
1 00
10 0 0
0
5 0 1 00 1 50 2 00 2 5 0 3 0 0
Rate Of Fa ll Of Forw ard Current - d i/dt (A/µs)
R ate Of Fall O f Forwa rd Current - di/dt (A/µs)
Fig. 12 - Recovery Time Characteristics
Fig. 14 - Recovery Current Characteristics
1E4
1E3
1E2
25 0 0
I
= 15 00 A
FM
Sine Pulse
10 joules per pulse
20 0 0
15 0 0
10 0 0
50 0
0
6
1000 A
4
2
1
500 A
0.8
0.6
0.4
0.2
SD553C ..S50L S eries
Sinu soid al Pu lse
= 1 25°C , V RRM= 1500V
SD 553C ..S5 0L S eries
1 25 °C ; V 100V
T
J
d v/d t = 1000V/µ s
tp
T
J
=
>
r
1E1
1E2
1E3
1E4
0
5 0 10 0 1 50 2 00 2 50 3 00
Rate Of Fall O f Forward C urrent - di/dt (A/µs)
Pulse Basewidth (µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
Document Number: 93177
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
1E4
1E4
tp
600 400 200 100
1000
50 Hz
50 H z
100
1500
200
400
2000
600
3000
4000
6000
10000
1E3
1E3
1000
S D55 3C..S50L Series
Sinu soid al Pu lse
55°C , V RRM = 1500V
d v/dt 1000V/u s
1500
2000
T
=
C
SD55 3C ..S50L S eries
Trap ezoidal Pulse
= 5 5°C, VRRM= 1500V
= 10 00V/u s,
di/d t = 300A/us
=
tp
3000
4000
6000
T
C
dv/dt
1E2
1E2
1E1
1E1
1E2
1E3
1E4
1E2
1E3
1E4
Pulse Basew idth (µs)
Pulse Basew idth (µs)
Fig. 16 - Frequency Characteristics
Fig. 18 - Frequency Characteristics
1E4
1E3
1E2
1E4
1E3
1E2
SD553C..S50L Series
Tra pezoidal Pulse
= 1 25°C , V RRM= 1500V
dv/d t = 100 0V /µs
di/d t = 100A/µs
SD553C.. S50L Series
Sin usoid al Pu lse
T
T
=
125°C , V RRM
= 1500V
J
J
d v/d t = 1000V/µ s
tp
tp
10 jou les per pulse
10 jo ules per p ulse
8
8
6
6
4
4
2
2
1
1
0.8
0.8
0.6
0.6
0.4
0.4
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basew idth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
tp
50 H z
100
200
400
600
1000
1500
1E3
2000
SD553C ..S 50L Series
Tra pezoida l Pu lse
3000
4000
T
C
= 55°C, V RRM= 15 00V
d v/d t = 1000V /u s,
d i/dt 100A/u s
=
6000
1E2
1E1
1E2
1E3
1E4
Pulse Basew idth (µs)
Fig. 20 - Frequency Characteristics
www.vishay.com
6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93177
Revision: 14-May-08
SD553C..S50L Series
Fast Recovery Diodes
(Hockey PUK Version), 560 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
SD
55
3
C
45 S50
L
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode
Essential part number
3 = Fast recovery
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
trr code
L = PUK case DO-200AB (B-PUK)
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95246
Document Number: 93177
Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
Outline Dimensions
Vishay Semiconductors
DO-200AB (B-PUK)
DIMENSIONS in millimeters (inches)
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
34 (1.34) DIA. MAX.
0.8 (0.03)
both ends
2 places
53 (2.09) DIA. MAX.
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Document Number: 95246
Revision: 05-Nov-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
相关型号：
SD553C45S50LPBF
Rectifier Diode, 1 Phase, 1 Element, 560A, 4500V V(RRM), Silicon, DO-200AB, BPUK-2
INFINEON
©2020 ICPDF网 联系我们和版权申明