SD553C45S50L [VISHAY]

Fast Recovery Diodes (Hockey PUK Version), 560 A; 快恢复二极管(曲棍球PUK版) , 560
SD553C45S50L
型号: SD553C45S50L
厂家: VISHAY    VISHAY
描述:

Fast Recovery Diodes (Hockey PUK Version), 560 A
快恢复二极管(曲棍球PUK版) , 560

整流二极管 快恢复二极管 高压 高压大功率快速软恢复电源 高压大电源 高功率电源 软恢复二极管 快速软恢复二极管
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SD553C..S50L Series  
Vishay High Power Products  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
FEATURES  
• High power FAST recovery diode series  
• 6.0 µs recovery time  
RoHS  
• High voltage ratings up to 4500 V  
• High current capability  
COMPLIANT  
• Optimized turn-on and turn-off characteristics  
• Low forward recovery  
• Fast and soft reverse recovery  
• Press PUK encapsulation  
DO-200AB (B-PUK)  
• Case style conform to JEDEC DO-200AB (B-PUK)  
• Maximum junction temperature 125 °C  
• Lead (Pb)-free  
PRODUCT SUMMARY  
TYPICAL APPLICATIONS  
• Snubber diode for GTO  
IF(AV)  
560 A  
• High voltage freewheeling diode  
• Fast recovery rectifier applications  
MAJOR RATINGS AND CHARACTERISTICS  
TEST CONDITIONS  
VALUES  
560  
PARAMETER  
UNITS  
A
°C  
A
IF(AV)  
Ths  
Ths  
55  
1120  
IF(RMS)  
25  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
Range  
12 000  
12 570  
721  
IFSM  
A
I2t  
kA2s  
658  
VRRM  
trr  
3000 to 4500  
6.0  
V
µs  
TJ  
125  
°C  
TJ  
- 40 to 125  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
RRM, MAXIMUM REPETITIVE  
VRSM, MAXIMUM NON-REPETITIVE  
IRRM MAXIMUM  
AT TJ = 125 °C  
mA  
VOLTAGE  
CODE  
TYPE NUMBER  
PEAK REVERSE VOLTAGE  
PEAK REVERSE VOLTAGE  
V
V
30  
36  
40  
45  
3000  
3600  
4000  
4500  
3100  
3700  
4100  
4600  
SD553C..S50L  
75  
Document Number: 93177  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1
SD553C..S50L Series  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
Vishay High Power Products  
FORWARD CONDUCTION  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
560 (210)  
55 (85)  
1120  
UNITS  
A
Maximum average forward current  
at heatsink temperature  
180° conduction, half sine wave  
Double side (single side) cooled  
IF(AV)  
°C  
Maximum RMS forward current  
IF(RMS)  
25 °C heatsink temperature double side cooled  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
t = 10 ms  
t = 8.3 ms  
12 000  
12 570  
10 100  
10 570  
721  
No voltage  
reapplied  
A
Maximum peak, one-cycle forward,  
non-repetitive surge current  
IFSM  
50 % VRRM  
reapplied  
Sinusoidal half wave,  
initial TJ = TJ maximum  
No voltage  
reapplied  
658  
Maximum I2t for fusing  
I2t  
kA2s  
510  
50 % VRRM  
reapplied  
466  
Maximum I2t for fusing  
I2t  
t = 0.1 to 10 ms, no voltage reapplied  
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum  
(I > π x IF(AV)), TJ = TJ maximum  
7210  
kA2s  
Low level value of threshold voltage  
High level value of threshold voltage  
VF(TO)1  
VF(TO)2  
1.77  
V
1.95  
Low level value of forward  
slope resistance  
rf1  
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum  
0.98  
mΩ  
High level value of forward  
slope resistance  
rf2  
(I > π x IF(AV)), TJ = TJ maximum  
0.89  
3.24  
Maximum forward voltage drop  
VFM  
Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave  
V
RECOVERY CHARACTERISTICS  
MAXIMUM VALUE  
AT TJ = 25 °C  
TYPICAL VALUES  
AT TJ = 125 °C  
TEST CONDITIONS  
IFM  
Ipk  
trr  
CODE  
t
rr AT 25 % IRRM  
(µs)  
SQUARE  
PULSE  
(A)  
dI/dt  
(A/µs)  
Vr  
(V)  
Qrr  
(µC)  
Irr  
(A)  
t
rr AT 25 % IRRM  
(µs)  
t
dir  
dt  
Qrr  
IRM(REC)  
S50  
5.0  
1000  
100  
- 50  
6.0  
900  
250  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum junction operating  
temperature range  
TJ  
- 40 to 125  
°C  
Maximum storage temperature range  
TStg  
- 40 to 150  
0.073  
DC operation single side cooled  
DC operation double side cooled  
Maximum thermal resistance,  
junction to heatsink  
RthJ-hs  
K/W  
0.031  
14 700  
(1500)  
N
(kg)  
Mounting force, 10 %  
Approximate weight  
Case style  
255  
g
Conforms to JEDEC  
DO-200AB (B-PUK)  
www.vishay.com  
2
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93177  
Revision: 14-May-08  
SD553C..S50L Series  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
Vishay High Power Products  
ΔRthJ-hs CONDUCTION  
SINUSOIDAL CONDUCTION  
RECTANGULAR CONDUCTION  
CONDUCTION ANGLE  
TEST CONDITIONS  
UNITS  
SINGLE SIDE  
0.009  
DOUBLE SIDE SINGLE SIDE DOUBLE SIDE  
180°  
120°  
90°  
0.009  
0.011  
0.014  
0.020  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
0.006  
0.011  
0.015  
0.021  
0.036  
0.011  
0.014  
TJ = TJ maximum  
K/W  
60°  
0.020  
30°  
0.036  
Note  
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC  
1 3 0  
1 2 0  
1 1 0  
1 0 0  
9 0  
13 0  
12 0  
11 0  
10 0  
9 0  
S D 5 53C ..S 50L Se rie s  
(D ou b le Sid e C o oled )  
thJ-hs  
S D 55 3C ..S50 L S e rie s  
(S in g le Sid e C oo led )  
th J- hs  
R
(D C ) = 0.031 K /W  
R
(D C ) = 0.073 K /W  
Cond uction Angle  
C ond uction Angle  
8 0  
8 0  
7 0  
7 0  
6 0  
30 °  
6 0°  
6 0  
5 0  
90°  
120°  
5 0  
60°  
90°  
4 0  
180°  
30°  
1 20°  
1 80°  
4 0  
3 0  
3 0  
2 0  
0
1 00  
2 0 0  
3 0 0  
4 00  
0
1 00 2 00 30 0 40 0 50 0 60 0 7 0 0 80 0  
Av era g e Fo rw a r d C u rre n t ( A)  
A ve ra g e F or w a rd C u rr en t (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 3 - Current Ratings Characteristics  
1 3 0  
1 2 0  
1 1 0  
1 0 0  
9 0  
130  
120  
110  
100  
90  
SD 553C..S50L Series  
(Double Side Cooled)  
thJ-h s  
SD 553C ..S 50L S eries  
(Sin g le S id e C oo le d )  
thJ-hs  
R
(DC) = 0.031 K/W  
R
( D C ) = 0.0 73 K/W  
80  
8 0  
C ond uction Period  
C ond uction Period  
70  
7 0  
30°  
6 0  
60  
50  
60°  
5 0  
90°  
3 0°  
120°  
6 0°  
4 0  
40  
30  
180°  
90°  
120°  
3 0  
2 0  
20  
10  
D C  
1000 1200  
180 °  
4 0 0  
D C  
5 00  
1 0  
0
200  
400  
600  
800  
0
1 00  
20 0  
3 0 0  
6 00  
Average Forw ard Current (A)  
A ve ra g e F orw a r d C u rre n t (A)  
Fig. 2 - Current Ratings Characteristics  
Fig. 4 - Current Ratings Characteristics  
Document Number: 93177  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
3
SD553C..S50L Series  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
Vishay High Power Products  
2500  
1 40 0 0  
1 20 0 0  
1 00 0 0  
M ax im u m N on R e petitive Su rge C u rre nt  
V ersu s P ulse T ra in D u ration .  
2250  
180°  
In itial  
T = 125°C  
J
2000  
1750  
1500  
1250  
1000  
750  
120°  
90°  
N o V o lta g e Re ap plie d  
50% R ated  
V
R eap p lied  
R RM  
60°  
RMS Limit  
30°  
80 0 0  
60 0 0  
40 0 0  
20 0 0  
Con duction An gle  
500  
SD553C..S50L Series  
250  
T = 125°C  
J
S D 553C ..S 50 L S erie s  
0 .1  
0
0
100 200 300 400 500 600 700 800  
Average Forw ard Current (A)  
0 .0 1  
1
P u lse T ra in D u ra tion (s)  
Fig. 8 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
Fig. 5 - Forward Power Loss Characteristics  
3500  
10000  
DC  
180°  
120°  
90°  
3000  
2500  
2000  
1500  
1000  
500  
60°  
T
= 25°C  
30°  
J
T
= 125°C  
J
RMS Limit  
1000  
C ond uction Period  
SD553C..S50L Series  
J
SD553C..S50L Series  
T
= 125°C  
0
100  
1.5  
0
200  
400  
600  
800  
1000 1200  
2
2.5  
3
3.5  
4
4.5  
5
Instantaneous Forward Voltage (V)  
Average Forward Current (A)  
Fig. 9 - Forward Voltage Drop Characteristics  
Fig. 6 - Forward Power Loss Characteristics  
0 .1  
12 0 0 0  
A t A n y R a te d Loa d C on d ition A n d W ith  
50% R a ted Ap p lie d Fo llow in g S u rg e  
V
R RM  
11 0 0 0  
10 0 0 0  
9 0 0 0  
8 0 0 0  
7 0 0 0  
6 0 0 0  
5 0 0 0  
4 0 0 0  
3 0 0 0  
SD 553 C ..S50 L S erie s  
In itia l T  
= 1 25 °C  
J
@
@
60 H z 0 .0 083  
50 H z 0 .0 100  
s
s
0 .0 1  
Ste a d y S ta te V a lu e  
R
=
0.073 K /W  
(Sin g le S id e C o ole d )  
0.031 K /W  
thJ-hs  
R
=
thJ- hs  
(D o ub le S id e C o ole d )  
(D C O p e ra tio n )  
S D 55 3C ..S5 0L S e rie s  
10  
0 .00 1  
0. 00 1  
1
1 0 0  
0 .0 1  
0 .1  
1
1 0  
10 0  
Number Of Equa l Amp litude Ha lf Cycle C urren t Pulses (N)  
Sq u a re W a ve P u lse D u ra tio n (s)  
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic  
Fig. 7 - Maximum Non-Repetitive Surge Current  
Single and Double Side Cooled  
www.vishay.com  
4
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93177  
Revision: 14-May-08  
SD553C..S50L Series  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
Vishay High Power Products  
4 00  
3 50  
3 00  
2 50  
V
F P  
I
T
=
125°C  
J
2 00  
1 50  
1 00  
T
= 25°C  
J
50  
0
SD 55 3C ..S 50L S eries  
0
20 0  
40 0  
6 0 0  
8 00  
1 0 00  
12 00  
1 4 00  
1 60 0  
18 0 0  
20 00  
R ate O f R ise O f Fo rw a rd C u rren t - d i/d t (A /us)  
Fig. 11 - Typical Forward Recovery Characteristics  
1 0 .5  
1 0  
9. 5  
9
8. 5  
8
7. 5  
7
6. 5  
6
8 00  
7 00  
6 00  
5 00  
4 00  
3 00  
2 00  
1 00  
0
I
= 1500 A  
FM  
SD 553 C ..S50L Se rie s  
1 25 ° C ; V 100V  
Sin e Pulse  
T
=
>
r
J
1000 A  
500 A  
I
= 15 00 A  
FM  
Sin e Pu lse  
1000 A  
500 A  
5. 5  
5
4. 5  
4
SD 55 3C ..S50 L S er ies  
1 25 °C ; V 100V  
T
J
=
>
r
1 0  
1 00  
10 0 0  
0
5 0 1 00 1 50 2 00 2 5 0 3 0 0  
Rate Of Fa ll Of Forw ard Current - d i/dt (A/µs)  
R ate Of Fall O f Forwa rd Current - di/dt (A/µs)  
Fig. 12 - Recovery Time Characteristics  
Fig. 14 - Recovery Current Characteristics  
1E4  
1E3  
1E2  
25 0 0  
I
= 15 00 A  
FM  
Sine Pulse  
10 joules per pulse  
20 0 0  
15 0 0  
10 0 0  
50 0  
0
6
1000 A  
4
2
1
500 A  
0.8  
0.6  
0.4  
0.2  
SD553C ..S50L S eries  
Sinu soid al Pu lse  
= 1 25°C , V RRM= 1500V  
SD 553C ..S5 0L S eries  
1 25 °C ; V 100V  
T
J
d v/d t = 1000V/µ s  
tp  
T
J
=
>
r
1E1  
1E2  
1E3  
1E4  
0
5 0 10 0 1 50 2 00 2 50 3 00  
Rate Of Fall O f Forward C urrent - di/dt (A/µs)  
Pulse Basewidth (µs)  
Fig. 13 - Recovery Charge Characteristics  
Fig. 15 - Maximum Total Energy Loss  
Per Pulse Characteristics  
Document Number: 93177  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
5
SD553C..S50L Series  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
Vishay High Power Products  
1E4  
1E4  
tp  
600 400 200 100  
1000  
50 Hz  
50 H z  
100  
1500  
200  
400  
2000  
600  
3000  
4000  
6000  
10000  
1E3  
1E3  
1000  
S D55 3C..S50L Series  
Sinu soid al Pu lse  
55°C , V RRM = 1500V  
d v/dt 1000V/u s  
1500  
2000  
T
=
C
SD55 3C ..S50L S eries  
Trap ezoidal Pulse  
= 5 5°C, VRRM= 1500V  
= 10 00V/u s,  
di/d t = 300A/us  
=
tp  
3000  
4000  
6000  
T
C
dv/dt  
1E2  
1E2  
1E1  
1E1  
1E2  
1E3  
1E4  
1E2  
1E3  
1E4  
Pulse Basew idth (µs)  
Pulse Basew idth (µs)  
Fig. 16 - Frequency Characteristics  
Fig. 18 - Frequency Characteristics  
1E4  
1E3  
1E2  
1E4  
1E3  
1E2  
SD553C..S50L Series  
Tra pezoidal Pulse  
= 1 25°C , V RRM= 1500V  
dv/d t = 100 0V /µs  
di/d t = 100A/µs  
SD553C.. S50L Series  
Sin usoid al Pu lse  
T
T
=
125°C , V RRM  
= 1500V  
J
J
d v/d t = 1000V/µ s  
tp  
tp  
10 jou les per pulse  
10 jo ules per p ulse  
8
8
6
6
4
4
2
2
1
1
0.8  
0.8  
0.6  
0.6  
0.4  
0.4  
1E1  
1E2  
1E3  
1E4  
1E1  
1E2  
1E3  
1E4  
Pulse Basewidth (µs)  
Pulse Basew idth (µs)  
Fig. 17 - Maximum Total Energy Loss  
Per Pulse Characteristics  
Fig. 19 - Maximum Total Energy Loss  
Per Pulse Characteristics  
1E4  
tp  
50 H z  
100  
200  
400  
600  
1000  
1500  
1E3  
2000  
SD553C ..S 50L Series  
Tra pezoida l Pu lse  
3000  
4000  
T
C
= 55°C, V RRM= 15 00V  
d v/d t = 1000V /u s,  
d i/dt 100A/u s  
=
6000  
1E2  
1E1  
1E2  
1E3  
1E4  
Pulse Basew idth (µs)  
Fig. 20 - Frequency Characteristics  
www.vishay.com  
6
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93177  
Revision: 14-May-08  
SD553C..S50L Series  
Fast Recovery Diodes  
(Hockey PUK Version), 560 A  
Vishay High Power Products  
ORDERING INFORMATION TABLE  
Device code  
SD  
55  
3
C
45 S50  
L
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Diode  
Essential part number  
3 = Fast recovery  
C = Ceramic PUK  
Voltage code x 100 = VRRM (see Voltage Ratings table)  
trr code  
L = PUK case DO-200AB (B-PUK)  
LINKS TO RELATED DOCUMENTS  
Dimensions  
http://www.vishay.com/doc?95246  
Document Number: 93177  
Revision: 14-May-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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