SD103AW-E3-18 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 0.35A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2;
| 型号： | SD103AW-E3-18 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.35A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2 光电二极管 |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
MECHANICAL DATA
• The SD103 series is a metal-on-silicon Schottky barrier
device which is protected by a PN junction guardring
Case: SOD-123
Weight: approx. 10.3 mg
• For general purpose applications
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
INTERNAL
CONSTRUCTION
PART
ORDERING CODE
TYPE MARKING
REMARKS
SD103AW-E3-08 or SD103AW-E3-18
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW-HE3-08 or SD103CW-HE3-18
SD103AW
Single diode
S6
SD103BW
SD103CW
Single diode
Single diode
S7
S8
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VRRM
VRRM
VRRM
IF
VALUE
40
UNIT
V
SD103AW
SD103BW
SD103CW
Repetitive peak reverse voltage
30
V
20
V
Forward continuous current (1)
Power dissipation (infinite heat sink) (1)
Single cycle surge
350
400
2
mA
mW
A
Ptot
10 μs square wave
IFSM
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
300
UNIT
K/W
°C
Junction temperature
125
Operating temperature range
Storage temperature range
Top
- 55 to + 125
- 55 to + 150
°C
Tstg
°C
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.6, 11-Mar-13
Document Number: 85681
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
5
UNIT
μA
VR = 30 V
VR = 20 V
VR = 10 V
SD103AW
SD103BW
SD103CW
IR
IR
Leakage current
5
μA
IR
5
μA
IF = 20 mA
IF = 200 mA
VF
VF
CD
370
600
mV
mV
pF
Forward voltage drop
Diode capacitance
V
R = 0 V, f = 1 MHz
50
10
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
Reverse recovery time
trr
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
Tamb = 125 °C
100 °C
100
100
75 °C
10
10
50 °C
25 °C
1
1
0.1
0.1
0.01
0.01
0
5
10 15 20 25 30 35 40 45 50
0
0.2
0.4
0.6
0.8
1.0
20084
VR - Reverse Voltage (V)
18488
V
F
- Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
100
5
t
= 300 ms
p
4
3
2
1
0
duty cycle = 2 %
10
1
0
10
20
30
40
50
0
0.5
1.0
1.5
18489
18491
V
F
- Forward Voltage (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical High Current Forward Conduction Curve
Fig. 4 - Typical Capacitance vs. Reverse Voltage
Rev. 1.6, 11-Mar-13
Document Number: 85681
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
50
40
30
20
10
0
100 mA
200 mA
I
= 400 mA
F
0
100
- Ambient Temperature (°C)
200
18492
T
amb
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
3.55 (0.140)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.6, 11-Mar-13
Document Number: 85681
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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