SD103AW-GS08 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | SD103AW-GS08 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 光电二极管 |
| 文件： | 总6页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103AW / 103BW / 103CW
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The low forward voltage drop and fast
switching make it ideal for protection of
e3
MOS devices, steering, biasing, and cou-
pling diodes for fast switching and low
logic level applications.
• Other applications are click suppression, efficient
17431
full wave bridges in telephone subsets, and block-
ing diodes in rechargeable low voltage battery sys-
tems.
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• This diode is also available in the MiniMELF case
with the type designations LL103A to LL103C,
DO-35 case with the type designations SD103A to
SD103C and SOD-323 case with type designa-
tions SD103AWS to SD103CWS.
• For general purpose applications.
• Lead (Pb)-free component
Mechanical Data
Case: SOD-123 Plastic case
Weight: approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Parts Table
Part
Ordering code
SD103AW-GS18 or SD103AW-GS08
SD103BW-GS18 or SD103BW-GS08
SD103CW-GS18 or SD103CW-GS08
Marking
Remarks
Tape and Reel
SD103AW
SD103BW
SD103CW
S6
S7
S8
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
V
Peak reverse voltage
SD103AW
VRRM
VRRM
VRRM
Ptot
40
30
20
SD103BW
SD103CW
V
V
4001)
Power dissipation
(Infinite heat sink)
mW
Single cycle surge
10 µs square wave
IFSM
2
A
Document Number 85681
Rev. 1.3,15-Mar-05
www.vishay.com
1
SD103AW / 103BW / 103CW
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
3001)
Unit
Thermal resistance junction to
ambient air
°C/W
1251)
- 55 to + 1501)
Junction temperature
Tj
°C
°C
Storage temperature range
TS
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Leakage current
Test condition
VR = 30 V
Part
Symbol
IR
Min
Typ.
Max
5
Unit
SD103AW
SD103BW
SD103CW
µA
V
V
R = 20 V
R = 10 V
IR
IR
5
5
µA
µA
V
Forward voltage drop
IF = 20 mA
VF
VF
Ctot
trr
0.37
0.6
IF = 200 mA
V
Diode capacitance
V
R = 0 V, f = 1 MHz
50
10
pF
ns
Reverse recovery time
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
10
5
4
3
2
1
0
t
= 300 ms
p
duty cycle = 2 %
1
0.1
0.01
0
0.2
V
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
18488
18489
- Forward Voltage ( V )
V
F
- Forward Voltage ( V )
F
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
Figure 2. Typical High Current Forward Conduction Curve
www.vishay.com
2
Document Number 85681
Rev. 1.3,15-Mar-05
SD103AW / 103BW / 103CW
Vishay Semiconductors
1000
100
10
°
°
T
= 125
100
C
C
amb
°
°
75
50
C
C
°
25
C
1
0.1
0
10
V
20
30
40
50
- Reverse Voltage ( V )
18490
R
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
100
10
1
0
10
20
30
40
50
18491
V
R
- Reverse Voltage ( V )
Figure 4. Typical Capacitance vs. Reverse Voltage
50
40
100 mA
30
200 mA
I
= 400 mA
F
20
10
0
0
100
- Ambient Temperature ( °C )
200
18492
T
amb
Figure 5. Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
Document Number 85681
Rev. 1.3,15-Mar-05
www.vishay.com
3
SD103AW / 103BW / 103CW
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.35 (0.053) max.
0.25 (0.010) min.
0.15 (0.006) max.
ISO Method E
0.1 (0.004) max.
0.55 (0.022)
Mounting Pad Layout
Cathode Band
1.40 (0.055)
0.72 (0.028)
1.70 (0.067)
1.40 (0.055)
17432
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4
Document Number 85681
Rev. 1.3,15-Mar-05
SD103AW / 103BW / 103CW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85681
Rev. 1.3,15-Mar-05
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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