概述
规格参数
数据手册
替代型号NSB8KTHE3/45 概述
DIODE GEN PURP 800V 8A TO263AB TVS二极管 整流二极管
NSB8KTHE3/45 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | D2PAK |
| 包装说明： | R-PSSO-G2 | 针数： | 3 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.57 |
| 其他特性： | FREE WHEELING DIODE, HIGH RELIABILITY | 应用： | GENERAL PURPOSE |
| 外壳连接： | CATHODE | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1.1 V | JEDEC-95代码： | TO-263AB |
| JESD-30 代码： | R-PSSO-G2 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 最大非重复峰值正向电流： | 125 A |
| 元件数量： | 1 | 相数： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 最低工作温度： | -55 °C | 最大输出电流： | 8 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 245 |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 800 V |
| 子类别： | Rectifier Diodes | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | 40 |
NSB8KTHE3/45 数据手册
通过下载NSB8KTHE3/45数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
Glass Passivated General Purpose Plastic Rectifier
FEATURES
TO-220AC
ITO-220AC
• Power pack
• Glass passivated chip junction
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package)
2
2
1
1
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AC and ITO-220AC package)
NS8xT
PIN 1
NSF8xT
PIN 1
CASE
• AEC-Q101 qualified
PIN 2
PIN 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
2
1
NSB8xT
PIN 1
K
MECHANICAL DATA
PIN 2
HEATSINK
Case: TO-220AC, ITO-220AC, TO-263AB
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commerical grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
IF(AV)
8.0 A
VRRM
IFSM
50 V to 1000 V
125 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
VF
1.1 V
meets JESD 201 class 2 whisker test
TJ max.
150 °C
Polarity: As marked
TO-220AC, ITO-220AC,
TO-263AB
Package
Mounting Torque: 10 in-lbs maximum
Diode variation
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
at TC = 100 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single sine-wave
IFSM
TJ, TSTG
VAC
125
- 55 to + 150
1500
A
°C
V
superimposed on rated load
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
Revision: 20-Jan-14
Document Number: 88690
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT
Maximum
instantaneous
forward voltage
(1)
8.0 A
TJ = 25 °C
VF
1.1
V
Maximum DC
reverse current
at rated DC
TJ = 25 °C
10
IR
μA
pF
TJ = 100 °C
100
blocking voltage
Typical junction
capacitance
4.0 V, 1 MHz
CJ
55
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
NSXT
NSFXT
NSBXT
UNIT
Typical thermal resistance from junction to case
RJC
3.0
5.0
3.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
NS8JT-E3/45
1.80
1.95
1.77
1.77
1.80
1.95
1.77
1.77
45
45
45
81
45
45
45
81
NSF8JT-E3/45
50/tube
Tube
NSB8JT-E3/45
50/tube
Tube
NSB8JT-E3/81
800/reel
Tape and reel
Tube
NS8JTHE3/45 (1)
NSF8JTHE3/45 (1)
NSB8JTHE3/45 (1)
NSB8JTHE3/81 (1)
50/tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 20-Jan-14
Document Number: 88690
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
100
60 Hz Resistive or Inductive Load
8
TJ = 100 °C
TJ = 75 °C
10
6
4
1
2
TJ = 25 °C
60
0
0.1
50
100
150
0
0
20
40
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
175
150
125
100
75
120
100
80
60
40
20
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
1.0 Cycle
50
25
0
1
10
100
0.1
1
10
100
1000
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance Per Leg
100
Pulse Width = 300 μs
1 % Duty Cycle
10
1
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 20-Jan-14
Document Number: 88690
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
NS8xT, NSF8xT, NSB8xT
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AC
ITO-220AC
0.404 (10.26)
0.190 (4.83)
0.384 (9.75)
0.170 (4.32)
0.415 (10.54) MAX.
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.185 (4.70)
0.076 (1.93) REF.
0.110 (2.79)
0.370 (9.40)
0.360 (9.14)
0.175 (4.44)
0.055 (1.39)
0.100 (2.54)
7° REF.
0.113 (2.87)
0.103 (2.62)
0.076 (1.93) REF.
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
45° REF.
0.145 (3.68)
0.135 (3.43)
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
7° REF.
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
PIN
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1
2
PIN
1.148 (29.16)
1.118 (28.40)
1
2
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.560 (14.22)
0.057 (1.45)
0.045 (1.14)
PIN 1
PIN 2
0.045 (1.14)
0.530 (13.46)
CASE
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.025 (0.64)
0.015 (0.38)
0.022 (0.56)
0.014 (0.36)
0.028 (0.71)
0.020 (0.51)
0.205 (5.20)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
1
K
2
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 20-Jan-14
Document Number: 88690
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
NSB8KTHE3/45 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| NSB8KT-E3/45 | VISHAY | DIODE 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R | 完全替代 |
|
| NSB8KT-E3/81 | VISHAY | DIODE GEN PURP 800V 8A TO263AB | 完全替代 |
|
NSB8KTHE3/45 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| NSB8KTHE3_A/I | VISHAY | DIODE GEN PURP 800V 8A TO263AB | 获取价格 |
|
| NSB8KTHE3_A/P | VISHAY | DIODE GEN PURP 800V 8A TO263AB | 获取价格 |
|
| NSB8MT | VISHAY | Glass Passivated General Purpose Plastic Rectifier | 获取价格 |
|
| NSB8MT-E3/45 | VISHAY | DIODE GEN PURP 1KV 8A TO263AB | 获取价格 |
|
| NSB8MT-E3/81 | VISHAY | DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| NSB8MT-E3/P | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, D2PAK-3/2 | 获取价格 |
|
| NSB8MT/81 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 | 获取价格 |
|
| NSB8MTHE3/45 | VISHAY | DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| NSB8MTHE3/81 | VISHAY | DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| NSB8MTHE3_A/I | VISHAY | DIODE GEN PURP 1KV 8A TO263AB | 获取价格 |
|
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