MBRF10H150CT [VISHAY]

Dual High-Voltage Schottky Rectifiers; 双高压肖特基整流器
MBRF10H150CT
型号: MBRF10H150CT
厂家: VISHAY    VISHAY
描述:

Dual High-Voltage Schottky Rectifiers
双高压肖特基整流器

整流二极管 高压
文件: 总3页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Dual High-Voltage Schottky Rectifiers  
Reverse Voltage 150V  
Forward Current 10A  
Max. Junction Temperature 175°C  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• Dual rectifier construction, positive center tap  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency  
• Guardring for overvoltage protection  
• For use in high frequency inverters,  
TO-220AB (MBR10H150CT)  
0.398 (10.10)  
0.185 (4.70)  
0.169 (4.30)  
0.382 (8.70)  
0.055 (1.40)  
0.047 (1.20)  
0.150 (3.80)  
0.139 (3.54)  
0.343 (8.70) Typ.  
0.055 (1.40)  
0.049 (1.25)  
Dia.  
free wheeling, and polarity protection applications  
0.114 (2.90)  
0.106 (2.70)  
0.154 (3.90)  
0.138 (3.50)  
Mechanical Data  
Case: JEDEC TO-220AB, ITO-220AB & TO-262AA  
molded plastic body  
Terminals: Plated leads, solderable per  
MIL-STD-750, Method 2026  
High temperature soldering guaranteed:  
250°C/10 seconds, 0.25" (6.35mm) from case  
Polarity: As marked  
0.067  
(1.70) Typ.  
0.638 (16.20)  
0.598 (15.20)  
0.634 (16.10)  
0.618 (15.70)  
0.331 (8.40) Typ.  
0.370 (9.40)  
0.354 (9.00)  
PIN  
1
2
3
1.161 (29.48)  
1.105 (28.08)  
0.118  
(3.00) Typ.  
0.102 (2.60)  
0.087 (2.20)  
Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08oz., 2.24g  
0.523 (13.28)  
PIN 1  
PIN 3  
PIN 2  
CASE  
0.507 (12.88)  
0.035 (0.90)  
0.028 (0.70)  
0.064 (1.62)  
0.056 (1.42)  
0.200 (5.08) Typ.  
0.024 (0.60)  
0.018 (0.45)  
0.100  
(2.54) Typ.  
Dimensions in inches  
and (millimeters)  
ITO-220AB (MBRF10H150CT)  
TO-262AA (MBRB10H150CT-1)  
0.408 (10.36)  
1.29 (3.28)  
0.108 (2.74)  
0.092 (2.34)  
Dia.  
0.392 (9.96)  
0.185 (4.70)  
0.169 (4.30)  
0.398 (10.10)  
0.382 (9.70)  
1.21 (3.08)  
0.055 (1.40)  
0.039 (1.00)  
0.138 (3.50)  
0.122 (3.10)  
0.055 (1.40)  
0.049 (1.25)  
K
0.141 (3.58)  
0.125 (3.18)  
0.633 (16.07)  
0.601 (15.67)  
0.425 (10.80)  
0.393 (10.00)  
0.370 (9.40)  
0.354 (9.00)  
0.630 (16.00)  
0.614 (15.60)  
0.370 (9.39)  
0.354 (8.99)  
PIN  
2
0.488 (12.4)  
0.472 (12.00)  
1
3
PIN  
2
1
3
0.102 (2.60)  
0.087 (2.20)  
1.164 (29.55)  
1.108 (28.15)  
0.117 (2.96)  
0.101 (2.56)  
0.523 (13.28)  
0.507 (12.88)  
PIN 1  
PIN 3  
0.405 (10.28)  
0.389 (9.88)  
PIN 2  
0.531 (13.48)  
0.396 (10.05)  
0.372 (9.45)  
0.035 (0.90)  
0.507 (12.88)  
CASE  
0.028 (0.70)  
0.039 (1.00)  
0.024 (0.60)  
0.062 (1.57)  
0.054 (1.37)  
0.024 (0.60)  
0.100  
(2.54) Typ.  
0.018 (0.45)  
0.058 (1.47) Typ.  
0.200 (5.08) Typ.  
0.024 (0.60)  
0.018 (0.45)  
0.200 (5.08) Typ.  
0.100  
(2.54) Typ.  
PIN 1  
PIN 3  
PIN 2  
CASE  
Document Number 88779  
18-Jul-03  
www.vishay.com  
1
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1  
Vishay Semiconductors  
formerly General Semiconductor  
Maximum Ratings (TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
VRRM  
VRWM  
VDC  
MBR10H150CT  
Unit  
V
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
150  
150  
150  
V
Maximum DC blocking voltage  
V
Maximum average forward rectified current Total device  
10  
5
IF(AV)  
A
A
(see fig. 1)  
Per leg  
Peak forward surge current  
8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method) per leg  
IFSM  
160  
Peak repetitive reverse current per leg at tp = 2µs, 1KHZ  
IRRM  
1.0  
10  
A
Peak non-repetitive reverse surge energy per leg  
(8/20µs waveform)  
ERSM  
mJ  
Non-repetitive avalanche energy per leg  
at 25°C, IAS = 1.5A, L=10mH  
EAS  
11.25  
mJ  
Voltage rate of change (rated VR)  
dv/dt  
10,000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
65 to +175  
4500 (1)  
3500 (2)  
1500 (3)  
RMS Isolation voltage (MBRF type only) from terminals  
to heatsink with t = 1 second, RH 30%  
VISOL  
V
Electrical Characteristics (TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Maximum instantaneous  
forward voltage per leg(4)  
at IF = 5.0A, TJ = 25°C  
at IF = 5.0A, TJ = 125°C  
at IF = 10A, TJ = 25°C  
at IF = 10A, TJ = 125°C  
0.88  
0.72  
0.96  
0.80  
VF  
V
Maximum reverse current per leg  
at working peak reverse voltage (Note 4)  
TJ = 25°C  
TJ = 125°C  
5.0  
1.0  
µA  
mA  
IR  
Thermal Characteristics (TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
MBR  
MBRF  
MBRB  
Unit  
Typical thermal resistance per leg  
RθJC  
2.4  
4.5  
2.4  
OC/W  
Notes:  
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110offset  
(2) Clip mounting (on case), where leads do overlap heatsink  
(3) Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19)  
(4) Pulse test: 300µs pulse width, 1% duty cycle  
www.vishay.com  
2
Document Number 88779  
18-Jul-03  
MBR10H150CT, MBRF10H150CT & MBRB10H150CT-1  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 1 – Forward Derating Curve  
Fig. 2 – Maximum Non-Repetitive  
(Total)  
Peak Forward Surge Current Per Leg  
12  
200  
180  
160  
140  
120  
100  
TJ = TJmax  
8.3ms single half-wave  
(JEDEC Method)  
MBR, MBRB  
10  
MBRF  
8
6
4
80  
60  
40  
20  
0
2
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Case Temperature (°C)  
Number of Cycles at 60 HZ  
Fig. 3 – Typical Instantaneous  
Forward Characteristics Per Leg  
Fig. 4 – Typical Reverse  
Characteristics Per Leg  
10,000  
1,000  
100  
100  
TJ = 175°C  
TJ = 175°C  
TJ = 125°C  
10  
1
T
J = 125°C  
10  
TJ = 75°C  
TJ = 75°C  
1
0.1  
TJ = 25°C  
TJ = 25°C  
0.01  
0.1  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 5 – Typical Junction Capacitance  
Per Leg  
Fig. 6 – Typical Transient  
Thermal Impedance Per Leg  
100  
10  
1
10000  
1000  
100  
MBRF  
MBR, MBRB  
0.1  
10  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
t -- Pulse Duration (sec.)  
Reverse Voltage (V)  
Document Number 88779  
18-Jul-03  
www.vishay.com  
3

相关型号:

MBRF10H150CT-E3/45

Dual Common-Cathode High-Voltage Schottky Rectifier
VISHAY

MBRF10H150CT-E3/45

Dual Common-Cathode High-Voltage Schottky Rectifier
KERSEMI

MBRF10H150CTG

SWITCHMODE? Power Rectifier 150 V, 10 A
ONSEMI

MBRF10H200CT

Isolated 10.0 AMPS. Schottky Barrier Rectifiers
TSC

MBRF10H200CT

Isolated 10.0AMP.Schottky Barrier Rectifiers
LGE

MBRF10H35

Schottky Barrier Rectifiers
VISHAY

MBRF10H35

Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
KERSEMI

MBRF10H35-HE3/45

DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

MBRF10H35HE3/45

DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN, Rectifier Diode
VISHAY

MBRF10H45

Schottky Barrier Rectifier
VISHAY

MBRF10H45-E3/45

Schottky Barrier Rectifier
VISHAY

MBRF10H45/45

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC, PLASTIC, ITO-220AC, 2 PIN
VISHAY