MBRF10H200CT [TSC]
Isolated 10.0 AMPS. Schottky Barrier Rectifiers; 孤立10.0安培。肖特基势垒整流器型号: | MBRF10H200CT |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | Isolated 10.0 AMPS. Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRF10H100CT - MBRF10H200CT
Isolated 10.0 AMPS. Schottky Barrier Rectifiers
Pb
RoHS
COMPLIANCE
ITO-220AB
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRF
10H100CT
100
MBRF
10H150CT
150
MBRF
10H200CT
200
Type Number
Symbol
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
70
100
105
150
140
200
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at TC=125oC
10
10
I(AV)
IFRM
IFSM
A
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=133oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
120
A
A
Peak Repetitive Reverse Surge Current
(Note 1)
1.0
0.5
IRRM
Maximum Instantaneous Forward Voltage at
(Note 2)
I = 5A, Tc=25oC
F
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
I = 5A, Tc=125oC
F
VF
V
I =10A, Tc=25oC
F
I =10A, Tc=125oC
F
Maximum Instantaneous Reverse Current
at Rated DC Blocking Voltage @Tc=25 oC
@ Tc=125 oC
uA
mA
5.0
1.0
IR
Voltage Rate of Change, (Rated VR)
10,000
dV/dt
V/uS
RMS Isolation Voltage (t=1.0 second, R.H.
≦30%, TA=25 oC)
(Note 4)
(Note 5)
(Note 6)
4500
3500
1500
VISO
V
oC/W
Typical Thermal Resistance Per Leg (Note3)
3.5
R
θJC
TJ
oC
Operating Junction Temperature Range
Storage Temperature Range
-65 to +175
-65 to +175
oC
TSTG
Notes:
1. 2.0 us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg.
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip mounting (on case), where leads do overlap heatsink.
6. Screw mounting with 4-40 screw, where washer diameter is ≦4.9 mm (0.19”)
Version: A07
RATINGS AND CHARACTERISTIC CURVES (MBRF10H100CT - MBRF10H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
12
10
8
180
150
120
90
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
6
60
4
30
2
0
0
25
50
75
125
0
100
150
175
0.1
1
10
100
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
5
1
40
Tj=1250C
Tj=1250C
20
10
0.1
0.01
Tj=250C
4
Tj=750C
2
1
0.001
0.0001
0.4
Tj=250C
Tj=250C
PULSE WIDTH-300
1% DUTY CYCLE
S
0.2
0.1
0
20
40
60
80
100
120
140
1.2
1.1
0.8
0.9
1.0
1.3
0.6
0.7
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10
1
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
500
0.1
100
0.1
1
10
REVERSE VOLTAGE. (V)
100
0.01
0.1
1
10
100
T, PULSE DURATION. (sec)
Version: A07
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