MBRF10H45HE3/45 [VISHAY]

Schottky Barrier Rectifier; 肖特基势垒整流器
MBRF10H45HE3/45
型号: MBRF10H45HE3/45
厂家: VISHAY    VISHAY
描述:

Schottky Barrier Rectifier
肖特基势垒整流器

整流二极管 瞄准线 功效 局域网
文件: 总5页 (文件大小:147K)
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MBR(F,B)10H35 thru MBR(F,B)10H60  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
2
2
1
• High frequency operation  
1
MBR10Hxx  
MBRF10Hxx  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
PIN 1  
CASE  
PIN 2  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB10Hxx  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
PIN 1  
K
HEATSINK  
PIN 2  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
10 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
VF  
35 V to 60 V  
150 A  
0.55 V, 0.61 V  
100 µA  
IR  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
Maximum DC blocking voltage  
V
Maximum average forward rectified current (Fig. 1)  
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH  
IF(AV)  
EAS  
10  
80  
A
mJ  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Peak non-repetitive reverse energy (8/20 µs waveform)  
IRRM  
1.0  
20  
0.5  
10  
A
ERSM  
mJ  
Electrostatic discharge capacitor voltage human body model:  
C = 100 pF, R = 1.5 kΩ  
VC  
25  
kV  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/µs  
Document Number: 88780  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
MBR(F,B)10H35 thru MBR(F,B)10H60  
Vishay General Semiconductor  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT  
Operating junction temperature range  
Storage temperature range  
TJ  
- 65 to + 175  
- 65 to + 175  
°C  
°C  
TSTG  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
MBR10H35  
MBR10H45  
MBR10H50  
MBR10H60  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
UNIT  
TYP.  
MAX.  
TYP.  
MAX.  
IF = 10 A  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
-
0.63  
0.55  
0.75  
0.68  
-
0.71  
0.61  
0.85  
0.71  
IF = 10 A  
IF = 20 A  
IF = 20 A  
0.49  
-
0.62  
0.57  
-
0.68  
Maximum instantaneous forward voltage (1)  
VF  
V
TJ = 25 °C  
TJ = 125 °C  
-
100  
12  
-
100  
12  
µA  
mA  
(2)  
Maximum reverse current at rated VR  
IR  
4.0  
2.0  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR  
MBRF  
4.0  
MBRB  
UNIT  
Maximum thermal resistance  
RθJC  
2.0  
2.0  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AC  
ITO-220AC  
TO-263AB  
TO-263AB  
TO-220AC  
ITO-220AC  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
MBR10H45-E3/45  
1.80  
1.94  
1.33  
1.33  
1.80  
1.94  
1.33  
1.33  
45  
45  
45  
81  
45  
45  
45  
81  
MBRF10H45-E3/45  
MBRB10H45-E3/45  
MBRB10H45-E3/81  
MBR10H45HE3/45 (1)  
MBRF10H45HE3/45 (1)  
MBRB10H45HE3/45 (1)  
MBRB10H45HE3/81 (1)  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
50/tube  
Tape and reel  
Tube  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
Tape and reel  
Note:  
(1) Automotive grade AEC Q101 qualified  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88780  
Revision: 19-May-08  
MBR(F,B)10H35 thru MBR(F,B)10H60  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
15  
100  
10  
TJ = 150 °C  
MBR, MBRB  
1
10  
TJ = 125 °C  
MBRF  
0.1  
0.01  
5
0
MBR10H35 - MBR10H45  
MBR10H50 - MBR10H60  
0.001  
0.0001  
T
J = 25 °C  
0
20  
40  
60  
80  
100  
0
25  
75  
100  
125  
150  
175  
50  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 1. Forward Current Derating Curve  
Figure 4. Typical Reverse Characteristics  
175  
150  
125  
100  
75  
10 000  
1000  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
TJ = TJ max.  
8.3 ms Single Half Sine-Wave  
MBR10H35 - MBR10H45  
MBR10H50 - MBR10H60  
50  
25  
1
10  
100  
1
10  
100  
0
Number of Cycles at 60 Hz  
Reverse Voltage (V)  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
Figure 5. Typical Junction Capacitance  
100  
10  
10  
TJ = 150 °C  
TJ = 25 °C  
1
1
TJ = 125 °C  
0.1  
MBR10H35 - MBR10H45  
MBR10H50 - MBR10H60  
0.01  
0.1  
0.01  
0.1  
1
10  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Document Number: 88780  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
MBR(F,B)10H35 thru MBR(F,B)10H60  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
ITO-220AC  
TO-220AC  
0.404 (10.26)  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.384 (9.75)  
0.415 (10.54) MAX.  
0.076 (1.93) REF.  
0.154 (3.91) DIA.  
0.185 (4.70)  
0.370 (9.40)  
0.360 (9.14)  
0.148 (3.74) DIA.  
0.175 (4.44)  
0.055 (1.39)  
7° REF.  
0.076 (1.93) REF.  
0.113 (2.87)  
0.045 (1.14)  
0.103 (2.62)  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
45° REF.  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
0.135 (3.43)  
7° REF.  
0.580 (14.73)  
0.603 (15.32)  
0.573 (14.55)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.350 (8.89)  
0.330 (8.38)  
0.625 (15.87)  
1
2
PIN  
1.148 (29.16)  
1.118 (28.40)  
1
2
7° REF.  
0.191 (4.85)  
0.160 (4.06)  
0.140 (3.56)  
0.110 (2.79)  
0.100 (2.54)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.560 (14.22)  
0.057 (1.45)  
0.045 (1.14)  
PIN 1  
PIN 2  
0.045 (1.14)  
0.530 (13.46)  
CASE  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.025 (0.64)  
0.205 (5.21)  
0.195 (4.95)  
0.037 (0.94)  
0.025 (0.64)  
0.027 (0.68)  
0.022 (0.56)  
0.014 (0.36)  
0.015 (0.38)  
0.028 (0.71)  
0.020 (0.51)  
0.205 (5.20)  
0.195 (4.95)  
TO-263AB  
0.411 (10.45)  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.190 (4.83)  
Mounting Pad Layout  
0.42 (10.66) MIN.  
0.055 (1.40)  
0.045 (1.14)  
0.160 (4.06)  
K
0.055 (1.40)  
0.047 (1.19)  
0.33 (8.38) MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
2
0.591 (15.00)  
0.670 (17.02)  
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.037 (0.940)  
0.15 (3.81) MIN.  
0.027 (0.686)  
0.105 (2.67)  
0.095 (2.41)  
0.08 (2.032) MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
0.095 (2.41)  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88780  
Revision: 19-May-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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