MBRF10H100CT-E3/45 [VISHAY]

Dual Common-Cathode High-Voltage Schottky Rectifier; 双共阴极高压肖特基整流器
MBRF10H100CT-E3/45
型号: MBRF10H100CT-E3/45
厂家: VISHAY    VISHAY
描述:

Dual Common-Cathode High-Voltage Schottky Rectifier
双共阴极高压肖特基整流器

高压
文件: 总5页 (文件大小:530K)
中文:  中文翻译
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MBR(F,B)10H90CT & MBR(F,B)10H100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR10H90CT  
MBR10H100CT  
1
MBRF10H90CT  
MBRF10H100CT  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder Dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
MBRB10H90CT  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB10H100CT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
5 A x 2  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
90 V, 100 V  
150 A  
0.61 V  
IR  
3.5 µA  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR10H90CT  
MBR10H100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
total device  
Maximum average forward rectified current at TC = 105 °C  
per diode  
10  
5.0  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
150  
0.5  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
A
V/µs  
°C  
10 000  
- 65 to + 175  
1500  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min  
TJ, TSTG  
VAC  
V
Document Number: 88668  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
MBR(F,B)10H90CT & MBR(F,B)10H100CT  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
IF = 5.0 A  
TJ = 25 °C  
TJ = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
0.76  
0.61  
0.85  
0.71  
IF = 5.0 A  
IF = 10 A  
IF = 10 A  
Maximum instantaneous forward voltage per diode (1)  
VF  
V
Maximum reverse current per diode at working peak  
reverse voltage (1)  
TJ = 25 °C  
TJ = 100 °C  
3.5  
4.5  
µA  
mA  
IR  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR  
MBRF  
MBRB  
2.2  
UNIT  
Typical thermal resistance per diode  
RθJC  
2.2  
5.2  
°C/W  
,
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
MBR10H100CT-E3/45  
1.85  
1.79  
1.35  
1.35  
1.85  
1.79  
1.35  
1.35  
45  
45  
45  
81  
45  
45  
45  
81  
MBRF10H100CT-E3/45  
MBRB10H100CT-E3/45  
MBRB10H100CT-E3/81  
MBR10H100CTHE3/45 (1)  
MBRF10H100CTHE3/45 (1)  
MBRB10H100CTHE3/45 (1)  
MBRB10H100CTHE3/81 (1)  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
50/tube  
Tape reel  
Tube  
50/tube  
Tube  
50/tube  
Tube  
800/reel  
Tape reel  
Note:  
(1) Automotive grade AEC Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
12  
10  
8
175  
150  
125  
100  
75  
MBR  
MBRB  
TJ = TJ Max.  
8.3 ms Single Half Sine-Wave  
6
MBRF  
4
2
50  
0
25  
1
0
25  
50  
75  
100  
125  
150  
175  
10  
100  
Case Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Derating Curve Per Diode  
Figure 2. Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88668  
Revision: 08-Nov-07  
MBR(F,B)10H90CT & MBR(F,B)10H100CT  
Vishay General Semiconductor  
100  
10  
100  
TJ = 175 °C  
Junction to Case  
TJ = 150 °C  
10  
1
T
TJ = 100 °C  
J = 25 °C  
J = 125 °C  
1
0.1  
T
TJ = - 40 °C  
0.7  
MBRF  
0.01  
0.1  
0.01  
1.1  
0.1  
0.3  
0.5  
0.9  
0.1  
1
10  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics Per Diode  
Figure 6. Typical Transient Thermal Impedance Per Diode  
10 000  
100  
Junction to Case  
TJ = 150 °C  
1000  
100  
10  
TJ = 125 °C  
10  
TJ = 100 °C  
1
1
T
J = 25 °C  
0.1  
MBRF  
10  
0.1  
0.01  
0.01  
0.1  
1
100  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Figure 4. Typical Reverse Characteristics Per Diode  
Figure 7. Typical Transient Thermal Impedance Per Diode  
1000  
100  
10  
0.1  
1
10  
100  
Reverse Voltage (V)  
Figure 5. Typical Junction Capacitance Per Diode  
Document Number: 88668  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
MBR(F,B)10H90CT & MBR(F,B)10H100CT  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.404 (10.26)  
0.415 (10.54) MAX.  
0.384 (9.75)  
0.185 (4.70)  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.148 (3.74)  
7° REF.  
0.113 (2.87)  
45° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.103 (2.62)  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
7° REF.  
0.135 (3.43)  
0.580 (14.73)  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
2
3
7° REF.  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.191 (4.85)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.057 (1.45)  
0.045 (1.14)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.025 (0.64)  
0.015 (0.38)  
0.105 (2.67)  
0.095 (2.41)  
0.028 (0.71)  
0.025 (0.64)  
0.104 (2.65)  
0.096 (2.45)  
0.020 (0.51)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.21)  
0.195 (4.95)  
TO-263AB  
0.411 (10.45)  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.190 (4.83)  
Mounting Pad Layout  
0.42 (10.66) MIN.  
0.055 (1.40)  
0.045 (1.14)  
0.160 (4.06)  
K
0.055 (1.40)  
0.047 (1.19)  
0.33 (8.38) MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
2
0.591 (15.00)  
0.670 (17.02)  
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.037 (0.940)  
0.15 (3.81) MIN.  
0.027 (0.686)  
0.105 (2.67)  
0.095 (2.41)  
0.08 (2.032) MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
0.095 (2.41)  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88668  
Revision: 08-Nov-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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