MBRB25H60CTHE3_B/P [VISHAY]
Rectifier Diode,;
| 型号： | MBRB25H60CTHE3_B/P |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, |
| 文件： | 总5页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
D2PAK (TO-263AB)
• Guardring for overvoltage protection
K
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
2
• High forward surge capability
• High frequency operation
1
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
MBRB25HxxCT
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
click logo to get started
DESIGN SUPPORT TOOLS
Models
Available
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V, 45 V, 60 V
150 A
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
IFSM
HE3 suffix meets JESD 201 class 2 whisker test
VF
IR
0.54 V, 0.60 V
100 μA
Polarity: as marked
TJ max.
175 °C
D2PAK (TO-263AB)
Package
Circuit configuration
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBRB25H35CT MBRB25H45CT MBRB25H60CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
30
15
60
60
60
V
total device
per diode
Max. average forward rectified current (fig. 1)
IF(AV)
A
Non-repetitive avalanche energy per diode at 25 °C,
EAS
80
mJ
A
IAS = 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode at tp = 2.0 μs,
1 kHz
IRRM
ERSM
VC
1.0
25
1.0
25
25
0.5
20
A
Peak non-repetitive reverse energy (8/20 μs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
Revision: 19-Sep-2018
Document Number: 88789
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
MBRB25H35CT
MBRB25H45CT
MBRB25H60CT
PARAMETER
SYMBOL
TEST CONDITIONS
UNIT
TYP.
-
MAX.
0.64
0.54
0.74
0.67
100
TYP.
-
MAX.
0.70
0.60
0.85
0.72
100
TJ = 25 °C
IF = 15 A
TJ = 125 °C
0.50
-
0.56
-
Maximum instantaneous forward voltage
per diode
(1)
VF
V
TJ = 25 °C
IF = 30 A
TJ = 125 °C
0.63
-
0.68
-
TJ = 25 °C
Rated VR
μA
(2)
Maximum reverse current per diode
IR
TJ = 125 °C
6.0
20
4.0
20
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRB
UNIT
Thermal resistance, junction to case per diode
RJC
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE BASE QUANTITY DELIVERY MODE
MBRB25H60CTHE3_B/P (1)
MBRB25H60CTHE3_B/I (1)
1.35
1.35
P
I
50/tube
800/reel
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 19-Sep-2018
Document Number: 88789
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
100
40
10
TJ = 150 °C
30
20
10
0
1
TJ = 125 °C
0.1
0.01
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
0.001
0.0001
T
J = 25 °C
0
20
40
60
80
100
0
25
75
100
125
150
175
50
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
150
125
100
75
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
1000
50
25
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
100
0
0.1
1
10
100
1
10
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
10
TJ = 150 °C
TJ = 25 °C
1
1
TJ = 125 °C
0.1
0.01
MBRB25H35CT, MBRB25H45CT
MBRB25H60CT
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 19-Sep-2018
Document Number: 88789
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRB25H35CT, MBRB25H45CT, MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
1
K
2
0.591 (15.00)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 19-Sep-2018
Document Number: 88789
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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