LL101A-GS18 [VISHAY]

Small Signal Schottky Barrier Diodes; 小信号肖特基势垒二极管
LL101A-GS18
型号: LL101A-GS18
厂家: VISHAY    VISHAY
描述:

Small Signal Schottky Barrier Diodes
小信号肖特基势垒二极管

信号二极管
文件: 总5页 (文件大小:98K)
中文:  中文翻译
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LL101A / 101B / 101C  
Vishay Semiconductors  
Small Signal Schottky Diodes  
Features  
• For general purpose applications  
• The LL101 series is a metal-on-silicon  
Schottky barrier device which is protected  
e2  
by a PN junction guard ring.  
• The low forward voltage drop and fast  
switching make it ideal for protection of MOS  
devices, steering, biasing and coupling diodes for  
fast switching and low logic level applications.  
94 9371  
• Integrated protection ring against static discharge  
• Low capacitance  
• Low leakage current  
• This diode is also available in the DO35 case with  
type designation SD101A, B, C and in the  
SOD123 case with type designation SD101AW,  
SD101BW, SD101CW.  
Mechanical Data  
Case: MiniMELF Glass case (SOD80)  
Weight: approx. 31 mg  
Cathode Band Color:Black  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
• HF-Detector  
• Protection circuit  
• Diode for low currents wits a low supply voltage  
• Small battery charger  
• Power supplies  
• DC / DC converter for notebooks  
Parts Table  
Part  
Type differentiation  
Ordering code  
Remarks  
LL101A  
V
V
V
R = 60 V, VF at IF 1 mA max. 410 mV  
LL101A-GS18 or LL101A-GS08  
Tape and Reel  
LL101B  
LL101C  
R = 50 V, VF at IF 1 mA max. 400 mV  
R = 40 V, VF at IF 1 mA max. 390 mV  
LL101B-GS18 or LL101B-GS08  
LL101C-GS18 or LL101C-GS08  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
VRRM  
Value  
Unit  
V
Peak inverse voltage  
LL101A  
60  
50  
40  
LL101B  
LL101C  
VRRM  
VRRM  
Ptot  
V
V
4001)  
Power dissipation  
(infinite heatsink)  
mW  
Forward continuous current  
IF  
30  
2
mA  
A
Maximum single cycle surge  
10 µs square wave  
IFSM  
1) Valid provided that electrodes are kept at ambient temperature  
Document Number 85626  
Rev. 1.2, 03-Mar-06  
www.vishay.com  
1
LL101A / 101B / 101C  
Vishay Semiconductors  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Tj  
Value  
125  
Unit  
°C  
Junction temperature  
Storage temperature range  
Junction to ambient air  
Tstg  
- 65 to + 150  
320  
°C  
on PC board  
50 mm x 50 mm x 1.6 mm  
RthJA  
K/W  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IR = 10 µA  
Part  
Symbol  
V(BR)R  
Min  
Typ.  
Max  
Unit  
V
Reverse Breakdown Voltage  
LL101A  
LL101B  
LL101C  
LL101A  
LL101B  
LL101C  
LL101A  
LL101B  
LL101C  
LL101A  
LL101B  
LL101C  
LL101A  
LL101B  
LL101C  
60  
50  
40  
V(BR)R  
V(BR)R  
IR  
V
V
Leakage current  
V
V
V
R = 50 V  
200  
200  
200  
410  
400  
390  
1000  
950  
900  
2.0  
nA  
nA  
nA  
mV  
mV  
mV  
mV  
mV  
mV  
pF  
pF  
pF  
ns  
R = 50V  
R = 50 V  
IR  
IR  
Forward voltage drop  
IF = 1 mA  
IF = 1mA  
IF = 1 mA  
IF = 15 mA  
VF  
VF  
VF  
VF  
VF  
VF  
Diode capacitance  
V
V
R = 0 V, f = 1 MHz  
R = 0 V, f = 1 MHz  
CD  
CD  
CD  
trr  
2.1  
2.2  
Reverse recovery time  
IF = IR = 5 mA,  
1
recover to 0.1 IR  
Typical Characteristics  
Tamb = 25 °C, unless otherwise specified  
gll101a_02  
gll101a_01  
Figure 1. Typ. IF vs. VF for primary conduction through the  
Schottky barrier  
Figure 2. Typ. IF of combination Schottky barrrier and PN junction  
guard ring  
www.vishay.com  
2
Document Number 85626  
Rev. 1.2, 03-Mar-06  
LL101A / 101B / 101C  
Vishay Semiconductors  
gll101a_04  
gll101a_03  
Figure 3. Typical Variation of Reverse Current at Various  
Figure 4. Typical Capacitance Curve as a Function of Reverse  
Voltage  
Temperatures  
Package Dimensions in mm (Inches)  
Cathode indification  
0.47 max. (0.019)  
3.7 (0.146)  
3.3 (0.130)  
foot print recommendation:  
1.25 (0.049) min  
2.5 (0.098) max  
5.0 (0.197) ref  
Document no.: 6.560-5005.01-4  
Rev. 7 - Date: 07.February.2005  
96 12070  
Document Number 85626  
Rev. 1.2, 03-Mar-06  
www.vishay.com  
3
LL101A / 101B / 101C  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
4
Document Number 85626  
Rev. 1.2, 03-Mar-06  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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