LL101A/D1 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 60V V(RRM), Silicon, GLASS, MINIMELF-2;型号: | LL101A/D1 |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Element, 60V V(RRM), Silicon, GLASS, MINIMELF-2 开关 二极管 |
文件: | 总3页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LL101A thru LL101C
Vishay Semiconductors
formerly General Semiconductor
Schottky Diodes
Features
• For general purpose applications
MiniMELF (SOD-80C)
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
Cathode Band
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
.063 (1.6)
.051 (1.3)
Dia.
• This diode is also available in the DO-35 case with
type designation SD101A, B, C and in the SOD-
123 case with type designation SD101AW,
SD101BW, SD101CW.
.019 (0.48)
.011 (0.28)
.146 (3.7)
.130 (3.3)
Mechanical Data
Dimensions in inches and (millimeters)
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
LL101A
LL101B
LL101C
60
50
40
Peak Inverse Voltage
VRRM
V
Power Dissipation (Infinite Heatsink)
Ptot
IFSM
RθJA
Tj
400(1)
mW
A
Maximum Single Cycle Surge 10µs Square Wave
Thermal Resistance Junciton to Ambient
Junction Temperature
2
300(1)
°CW
°C
125
Storage Temperature Range
TS
–55 to +150
°C
Note:
(1) Valid provided that electrodes are kept at ambient temperature.
Document Number 88205
13-May-02
www.vishay.com
1
LL101A thru LL101C
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
LL101A
LL101B
LL101C
60
50
40
—
—
—
—
—
—
Reverse Breakdown Voltage
V(BR)R
IR = 10µA
V
LL101A
LL101B
LL101C
VR = 50V
VR = 50V
VR = 50V
—
—
—
—
—
—
200
200
200
Leakage Current
IR
VF
VF
nA
V
LL101A
LL101B
LL101C
—
—
—
—
—
—
0.41
0.4
0.39
IF = 1mA
IF = 15mA
Forward Voltage Drop
LL101A
LL101B
LL101C
—
—
—
—
—
—
1
0.95
0.9
V
LL101A
LL101B
LL101C
—
—
—
—
—
—
2.0
2.1
2.2
Junction Capacitance
Ctot
VR = 0V, f = 1MHz
pF
ns
IF = IR = 5mA,
recover to 0.1IR
Reverse Recovery Time
trr
—
—
1
www.vishay.com
2
Document Number 88205
13-May-02
LL101A thru LL101C
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88205
13-May-02
www.vishay.com
3
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