IRFR024TRA [VISHAY]

Transistor;
IRFR024TRA
型号: IRFR024TRA
厂家: VISHAY    VISHAY
描述:

Transistor

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中文:  中文翻译
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IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
Halogen-free According to IEC 61249-2-21  
60  
Definition  
• Dynamic dV/dt Rating  
RDS(on) (Ω)  
VGS = 10 V  
0.10  
• Surface Mount (IRFR024, SiHFR024)  
• Straight Lead (IRFU024, SiHFU024)  
• Available in Tape and Reel  
• Fast Switching  
Qg (Max.) (nC)  
25  
5.8  
Q
Q
gs (nC)  
gd (nC)  
11  
• Ease of Paralleling  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
D
DPAK  
(TO-252)  
IPAK  
(TO-251)  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D
D
G
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
lead version (IRFU, SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
S
G
S
D
G
S
N-Channel MOSFET  
are possible in typical surface mount applications.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
SiHFR024-GE3  
IRFR024PbF  
SiHFR024-E3  
IRFR024  
DPAK (TO-252)  
SiHFR024TR-GE3  
IRFR024TRPbFa  
SiHFR024T-E3a  
IRFR024TRa  
DPAK (TO-252)  
IPAK (TO-251)  
SiHFU024-GE3  
IRFU024PbF  
SiHFU024-E3  
IRFU024  
Lead (Pb)-free and Halogen-free  
SiHFR024TRL-GE3  
-
Lead (Pb)-free  
SnPb  
-
IRFR024TRLa  
SiHFR024TLa  
SiHFR024  
SiHFR024Ta  
SiHFU024  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
T
C = 25 °C  
14  
9.0  
Continuous Drain Current  
VGS at 10 V  
ID  
T
C = 100 °C  
A
Pulsed Drain Currenta  
IDM  
56  
Linear Derating Factor  
0.33  
0.020  
91  
W/°C  
mJ  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
PD  
TC = 25 °C  
TA = 25 °C  
42  
W
2.5  
dV/dt  
5.5  
V/ns  
°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12).  
c. ISD 17 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
www.vishay.com  
1
IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Maximum Junction-to-Ambient  
RthJA  
-
-
110  
Maximum Junction-to-Ambient  
(PCB Mount)a  
RthJA  
RthJC  
-
-
-
-
50  
°C/W  
Maximum Junction-to-Case (Drain)  
3.0  
Note  
a. When mounted on 1" square PCB (FR-4 or G-10 material).  
SPECIFICATIONS TJ = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNIT  
Static  
Drain-Source Breakdown Voltage  
VDS  
ΔVDS/TJ  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
Reference to 25 °C, ID = 1 mA  
VDS = VGS, ID = 250 μA  
60  
-
-
-
-
V
V/°C  
V
VDS Temperature Coefficient  
0.073  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
2.0  
-
-
-
-
-
-
-
4.0  
100  
25  
250  
0.10  
-
VGS  
=
20 V  
nA  
VDS = 60 V, VGS = 0 V  
-
Zero Gate Voltage Drain Current  
IDSS  
μA  
V
DS = 48 V, VGS = 0 V, TJ = 125 °C  
-
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic  
RDS(on)  
gfs  
VGS = 10 V  
VDS = 25 V, ID = 8.4 Ab  
ID = 8.4 Ab  
-
Ω
6.2  
S
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
Qg  
-
-
-
-
-
-
-
-
-
-
640  
360  
79  
-
-
-
VGS = 0 V,  
DS = 25 V,  
f = 1.0 MHz, see fig. 5  
V
pF  
nC  
-
25  
5.8  
11  
-
ID = 17 A, VDS = 48 V,  
Qgs  
Qgd  
td(on)  
tr  
VGS = 10 V  
-
see fig. 6 and 13b  
-
13  
58  
25  
42  
-
VDD = 30 V, ID = 17A,  
ns  
R
G = 18 Ω, RD = 1.7 Ω, see fig. 10b  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
-
-
D
Between lead,  
Internal Drain Inductance  
LD  
LS  
-
-
4.5  
7.5  
-
-
6 mm (0.25") from  
package and center of  
die contact  
nH  
G
Internal Source Inductance  
S
Drain-Source Body Diode Characteristics  
Continuous Source-Drain Diode Current  
MOSFET symbol  
showing the  
integral reverse  
p - n junction diode  
D
IS  
-
-
-
-
14  
56  
A
G
Pulsed Diode Forward Currenta  
ISM  
S
Body Diode Voltage  
VSD  
trr  
TJ = 25 °C, IS = 14 A, VGS = 0 Vb  
-
-
-
-
1.5  
180  
0.64  
V
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Forward Turn-On Time  
88  
ns  
μC  
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb  
Qrr  
ton  
0.29  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width 300 μs; duty cycle 2 %.  
www.vishay.com  
2
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
Fig. 1 - Typical Output Characteristics, TC = 25 °C  
Fig. 3 - Typical Transfer Characteristics  
Fig. 2 - Typical Output Characteristics, TC = 150 °C  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
www.vishay.com  
3
IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage  
Fig. 7 - Typical Source-Drain Diode Forward Voltage  
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage  
Fig. 8 - Maximum Safe Operating Area  
www.vishay.com  
4
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
RD  
VDS  
VGS  
D.U.T.  
RG  
+
V
-
DD  
10 V  
Pulse width 1 µs  
Duty factor 0.1 %  
Fig. 10a - Switching Time Test Circuit  
VDS  
90 %  
10 %  
VGS  
td(on) tr  
td(off) tf  
Fig. 9 - Maximum Drain Current vs. Case Temperature  
Fig. 10b - Switching Time Waveforms  
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
www.vishay.com  
5
IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
L
VDS  
VDS  
Vary tp to obtain  
required IAS  
tp  
VDD  
D.U.T  
IAS  
RG  
+
-
VDD  
VDS  
10 V  
0.01 Ω  
tp  
IAS  
Fig. 12b - Unclamped Inductive Waveforms  
Fig. 12a - Unclamped Inductive Test Circuit  
Fig. 12c - Maximum Avalanche Energy vs. Drain Current  
Current regulator  
Same type as D.U.T.  
50 kΩ  
QG  
10 V  
12 V  
0.2 µF  
0.3 µF  
QGS  
QGD  
+
-
VDS  
D.U.T.  
VG  
VGS  
3 mA  
Charge  
IG  
ID  
Current sampling resistors  
Fig. 13a - Basic Gate Charge Waveform  
Fig. 13b - Gate Charge Test Circuit  
www.vishay.com  
6
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
IRFR024, IRFU024, SiHFR024, SiHFU024  
Vishay Siliconix  
Peak Diode Recovery dV/dt Test Circuit  
+
Circuit layout considerations  
Low stray inductance  
Ground plane  
D.U.T.  
Low leakage inductance  
current transformer  
-
+
-
-
+
Rg  
dV/dt controlled by Rg  
Driver same type as D.U.T.  
ISD controlled by duty factor “D”  
D.U.T. - device under test  
+
-
VDD  
Driver gate drive  
P.W.  
P.W.  
D =  
Period  
Period  
V
GS = 10 Va  
D.U.T. lSD waveform  
D.U.T. VDS waveform  
Reverse  
recovery  
current  
Body diode forward  
current  
dI/dt  
Diode recovery  
dV/dt  
VDD  
Re-applied  
voltage  
Body diode forward drop  
Inductor current  
ISD  
Ripple 5 %  
Note  
a. VGS = 5 V for logic level devices  
Fig. 14 - For N-Channel  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?91264.  
Document Number: 91264  
S10-1122-Rev. C, 10-May-10  
www.vishay.com  
7
Package Information  
Vishay Siliconix  
TO-252AA (HIGH VOLTAGE)  
E
b3  
E1  
L3  
D1  
D
H
L4  
b2  
b
A
c2  
e
A1  
L
L1  
c
θ
L2  
MILLIMETERS  
INCHES  
DIM.  
E
MIN.  
MAX.  
6.73  
1.77  
MIN.  
0.252  
0.055  
MAX.  
0.265  
0.070  
6.40  
1.40  
L
L1  
L2  
L3  
L4  
D
2.743 REF  
0.508 BSC  
0.108 REF  
0.020 BSC  
0.89  
0.64  
6.00  
9.40  
0.64  
0.77  
5.21  
1.27  
1.01  
6.22  
10.40  
0.88  
1.14  
5.46  
0.035  
0.025  
0.236  
0.370  
0.025  
0.030  
0.205  
0.050  
0.040  
0.245  
0.409  
0.035  
0.045  
0.215  
H
b
b2  
b3  
e
2.286 BSC  
0.090 BSC  
A
2.20  
0.00  
0.45  
0.45  
5.30  
4.40  
0'  
2.38  
0.13  
0.60  
0.58  
-
0.087  
0.000  
0.018  
0.018  
0.209  
0.173  
0'  
0.094  
0.005  
0.024  
0.023  
-
A1  
c
c2  
D1  
E1  
θ
-
-
10'  
10'  
ECN: S-81965-Rev. A, 15-Sep-08  
DWG: 5973  
Notes  
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.  
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but  
including any mismatch between the top and bottom of the plastic body.  
3. The package top may be smaller than the package bottom.  
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum  
material condition. The dambar cannot be located on the lower radius of the foot.  
Document Number: 91344  
Revision: 15-Sep-08  
www.vishay.com  
1
Package Information  
Vishay Siliconix  
TO-251AA (HIGH VOLTAGE)  
4
3
A
E1  
E
Thermal PAD  
A
4
0.010  
M
A B  
C
0.25  
c2  
b4  
L2  
4
A
θ1  
θ2  
D1  
4
B
C
3
Seating  
plane  
5
C
B
C
L3  
L1  
(Datum A)  
L
B
A
A1  
3 x b2  
3 x b  
c
View A - A  
M
0.010  
C A B  
0.25  
2 x e  
Base  
metal  
5
Plating  
(c)  
b1, b3  
Lead tip  
5
c1  
(b, b2)  
Section B - B and C - C  
MILLIMETERS  
INCHES  
MILLIMETERS  
INCHES  
MAX.  
DIM.  
A
MIN.  
2.18  
0.89  
0.64  
0.65  
0.76  
0.76  
4.95  
0.46  
0.41  
0.46  
5.97  
MAX.  
2.39  
1.14  
0.89  
0.79  
1.14  
1.04  
5.46  
0.61  
0.56  
0.86  
6.22  
MIN.  
0.086  
0.035  
0.025  
0.026  
0.030  
0.030  
0.195  
0.018  
0.016  
0.018  
0.235  
MAX.  
0.094  
0.045  
0.035  
0.031  
0.045  
0.041  
0.215  
0.024  
0.022  
0.034  
0.245  
DIM.  
D1  
E
MIN.  
5.21  
6.35  
4.32  
MAX.  
MIN.  
0.205  
0.250  
0.170  
-
6.73  
-
-
0.265  
-
A1  
b
E1  
e
b1  
b2  
b3  
b4  
c
2.29 BSC  
2.29 BSC  
L
8.89  
1.91  
0.89  
1.14  
0'  
9.65  
2.29  
1.27  
1.52  
15'  
0.350  
0.075  
0.035  
0.045  
0'  
0.380  
0.090  
0.050  
0.060  
15'  
L1  
L2  
L3  
θ1  
θ2  
c1  
c2  
D
25'  
35'  
25'  
35'  
ECN: S-82111-Rev. A, 15-Sep-08  
DWG: 5968  
Notes  
1. Dimensioning and tolerancing per ASME Y14.5M-1994.  
2. Dimension are shown in inches and millimeters.  
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the  
outermost extremes of the plastic body.  
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.  
5. Lead dimension uncontrolled in L3.  
6. Dimension b1, b3 and c1 apply to base metal only.  
7. Outline conforms to JEDEC outline TO-251AA.  
Document Number: 91362  
Revision: 15-Sep-08  
www.vishay.com  
1
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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