IRFP460PPBF [VISHAY]
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN;
| 型号： | IRFP460PPBF |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP460, SiHFP460
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
500
Available
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
R
DS(on) (Ω)
VGS = 10 V
0.27
RoHS*
Qg (Max.) (nC)
210
29
COMPLIANT
Q
Q
gs (nC)
gd (nC)
110
• Ease of Paralleling
Configuration
Single
• Simple Drive Requirements
• Lead (Pb)-free Available
D
TO-247
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
G
S
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRFP460PbF
SiHFP460-E3
IRFP460
Lead (Pb)-free
SnPb
SiHFP460
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
500
V
VGS
20
TC = 25 °C
TC =100°C
20
Continuous Drain Current
V
GS at 10 V
ID
13
A
Pulsed Drain Currenta
IDM
80
Linear Derating Factor
2.2
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
960
20
EAR
28
280
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
3.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
www.vishay.com
1
IRFP460, SiHFP460
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.24
-
-
°C/W
0.45
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
500
-
-
-
V
-
2.0
-
0.63
V/°C
V
-
-
-
-
-
-
4.0
100
25
250
0.27
-
VGS
VDS = 500 V, VGS = 0 V
DS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 Ab
VDS = 50 V, ID = 12 Ab
=
20 V
nA
-
Zero Gate Voltage Drain Current
IDSS
µA
V
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
13
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
4200
870
350
-
-
VGS = 0 V,
V
DS = 25 V,
-
pF
f = 1.0 MHz, see fig. 5
-
210
ID = 20 A, VDS = 400 V
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
29
nC
-
110
18
59
110
58
-
-
-
-
V
DD = 250 V, ID = 20 A ,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
R
G = 4.3 Ω, RD = 13 Ω, see fig. 10b
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
5.0
13
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
IS
-
-
-
-
20
80
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 20 A, VGS = 0 Vb
-
-
-
-
1.8
860
8.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
570
5.7
ns
µC
TJ = 25 °C, IF = 20A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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2
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
15 V
10 V
Top
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
150 °C
Bottom
101
101
25 °C
4.5 V
20 µs Pulse Width
20 µs Pulse Width
100
VDS = 50 V
TC = 25 °C
100
101
100
4
5
6
7
8
9
10
91237_03
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
91237_01
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
3.5
3.0
2.5
2.0
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
ID = 20 A
VGS = 10 V
Top
4.5 V
101
Bottom
1.5
1.0
0.5
0.0
20 µs Pulse Width
TC = 150 °C
100
100
101
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
91237_04
91237_02
TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
www.vishay.com
3
IRFP460, SiHFP460
Vishay Siliconix
10 000
102
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
8000
6000
4000
Ciss
150 °C
Coss
25 °C
2000
0
Crss
VGS = 0 V
1.8 2.0
101
0.6
100
101
1.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
91237_07
91237_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
20
ID = 20 A
Operation in this area limited
5
by RDS(on)
VDS = 400 V
16
12
8
2
V
DS = 250 V
102
5
10 µs
V
DS = 100 V
2
100 µs
10
5
1 ms
4
TC = 25 °C
TJ = 150 °C
Single Pulse
2
For test circuit
see figure 13
10 ms
1
0
2
5
2
5
2
5
1
10
102
103
0
80
200
40
120
160
VDS, Drain-to-Source Voltage (V)
91237_08
QG, Total Gate Charge (nC)
91237_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
20
+
V
-
DD
16
12
8
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
4
90 %
0
25
50
75
100
125
150
10 %
VGS
TC, Case Temperature (°C)
91237_09
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
0 - 0.5
0.1
0.2
0.1
PDM
0.05
0.02
0.01
Single Pulse
(Thermal Response)
10-2
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (S)
91237_11
Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
VDS
VDS
Vary tp to obtain
required IAS
tp
VDD
D.U.T
+
RG
VDD
-
VDS
IAS
A
10 V
0.01 Ω
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
www.vishay.com
5
IRFP460, SiHFP460
Vishay Siliconix
2400
2000
1600
1200
ID
8.9 A
13 A
Bottom 20 A
Top
800
400
VDD = 50 V
25
0
125
Starting T , Junction Temperature (°C)
75
100
150
50
91237_12c
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
QG
10 V
QGS
QGD
VG
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
0.3 µF
+
-
VDS
D.U.T.
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91237
S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
RG
• dV/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Driver gate drive
P.W.
P.W.
Period
Period
D =
V
= 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91237.
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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