IRFP4710 [INFINEON]
Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A); 功率MOSFET （ VDSS = 100V ， RDS（ON）最大值= 0.014ohm ，ID = 72A ）
| 型号： | IRFP4710 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) |
| 文件： | 总8页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94361
IRFP4710
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Motor Control
VDSS
100V
RDS(on) max
ID
72A
0.014Ω
l Uninterruptible Power Supplies
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
TO-247AC
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
72
51
A
300
PD @TC = 25°C
Power Dissipation
190
W
W/°C
V
Linear Derating Factor
1.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
8.2
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.81
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Notes through ꢀ are on page 8
www.irf.com
1
01/08/02
IRFP4710
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on) Static Drain-to-Source On-Resistance ––– 0.011 0.014
VGS(th)
Ω
VGS = 10V, ID = 45A
VDS = VGS, ID = 250µA
VDS = 95V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
3.5
––– 5.5
V
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
35 ––– –––
––– 110 170
Conditions
VDS = 50V, ID = 45A
ID = 45A
gfs
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
43 –––
40 –––
35 –––
nC VDS = 50V
VGS = 10V,
VDD = 50V
––– 130 –––
ID = 45A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
41 –––
38 –––
RG = 4.5Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 6160 –––
––– 440 –––
––– 250 –––
––– 1580 –––
––– 280 –––
––– 430 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ꢀ
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
–––
Max.
190
45
Units
mJ
EAS
IAR
A
EAR
Repetitive Avalanche Energy
20
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
72
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
300
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 74 110
––– 180 260
V
TJ = 25°C, IS = 45A, VGS = 0V
TJ = 25°C, IF = 45A
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP4710
1000
100
10
1000
100
10
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
TOP
TOP
BOTTOM 6.0V
BOTTOM6.0V
1
6.0V
6.0V
0.1
20µs PULSE WIDTH
T = 175 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
75A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 50V
DS
V
=10V
20µs PULSE WIDTH
GS
0.1
6.0
7.0
8.0
9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP4710
20
16
12
8
10000
8000
I
D
= 45A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
6000
4000
2000
4
Coss
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
0
40
80
120
160
200
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.0
0.4
0.8
1.2
1.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP4710
RD
80
60
40
20
0
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
C)
175
°
(
T
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
t
2
SINGLE PULSE
0.02
0.01
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFP4710
350
300
250
200
150
100
50
I
D
15V
TOP
18A
32A
45A
BOTTOM
DR IVER
L
V
D S
D .U .T
A S
R
G
+
V
D D
-
I
A
V
2
GS
0.0 1
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
10 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP4710
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP4710
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D
-
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
1.50 (.059)
- B
-
- A
-
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C
-
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
2.40 (.094)
2.00 (.079)
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2X
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MB L Y
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLYLINE "H"
035H
57
56
DATE CODE
YEAR 0 = 2000
WE E K 35
ASSEMBLY
LOT CODE
LINE H
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 190µH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀCoss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS
.
RG = 25Ω, IAS = 45A, VGS = 10V.
ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C .
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/02
8
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