GSOT12 [VISHAY]
ESD Protection Diode; ESD保护二极管
| 型号： | GSOT12 |
| 厂家： | 
VISHAY |
| 描述： | ESD Protection Diode |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
ESD Protection Diode
Features
• Transient protection for data lines as per
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-5 (Lightning) see I
below
PPM
Terminals: High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Mechanical Data
Case: SOT-23 Plastic Package
Molding Compound Flammability Rating:
Weight: 8 mg
UL 94 V-0
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak power dissipation1)
Forward surge current
Test condition
Symbol
PPK
Value
300
Unit
W
8/20 µs pulse
8.3 ms single half sine-wave
IFSM
7
A
1) Non-repetitive current pulse and derated above TA = 25 °C,
for GSOT03, GSOT04, the peak power dissipation is 270 W
Thermal Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Test condition
Symbol
Tstg, TJ
Value
Unit
°C
Operation and storage
temperature range
- 55 to + 150
Electrical Characteristics
Part Number
Device
Marking
Code
Rated
Stand-off
Voltage
Minimum
Breakdown
Voltage
Maximum
Clamping
Voltage
Maximum
Pulse Peak
Current
Maximum
Leakage
Current
Maximum
Capacitance
VWM
V
VBR
V
VC
V
tp = 8/20 µs
ID
µA
C
pF
IPPM
A
@ IP = 1 A1) @ IP = 5 A1)
@ 1 mA
@ VWM
@ 0 V, 1 MHz
GSOT03
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOT36
03
04
05
08
12
15
24
36
3.3
4.0
4.0
5.0
6.5
8.5
7.5
18
17
17
15
12
10
5
125
125
100
10
2
800
800
550
400
185
140
83
10.5
12.5
15.0
28.0
35.0
60.0
75.0
5.0
6.0
9.8
8.0
8.5
13.4
19.0
24.0
43.0
60.0
12.0
15.0
24.0
36.0
13.3
16.7
26.7
40
1
1
2
1
80
1) 8/20 µs waveform used (see figure 2)
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
1
GSOT03 to GSOT36
Vishay Semiconductors
VISHAY
Typical Characteristics (T
= 25 °C unless otherwise specified)
amb
10000
1000
300W, 8/20 µs waveshape
100
10
0.1
1.0
10
100
1000
10000
17476
td - Pulse Duration ( µs )
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
110
Pulse Width (td)
100
90
is defined as the point
where the peak current
decays to 50% of IPPM
80
70
60
50
40
I
=
PP
td
2
30
20
10
0
5
10
25
0
15
20
30
17477
t - Time ( µs )
Figure 2. Pulse Waveform
100
80
60
40
20
Peak Pulse Power
8/20 µs
Average Power
0
25
50
TL - Lead Temperature °C
125
150
0
75
100
17478
Figure 3. Power Derating
www.vishay.com
2
Document Number 85807
Rev. 2, 02-Jun-03
GSOT03 to GSOT36
VISHAY
Vishay Semiconductors
Package Dimensions in Inches (mm)
.12 2 (3.1)
.110 (2.8)
.016 ( 0.4)
Top View
3
1
2
.037( 0.95)
.037( 0.95)
.102 ( 2.6)
.094 ( 2.4)
.016 ( 0.4)
.016 ( 0.4)
17418
Document Number 85807
Rev. 2, 02-Jun-03
www.vishay.com
3
GSOT03 to GSOT36
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85807
Rev. 2, 02-Jun-03
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