GSOT12-E3-18 [VISHAY]
TVS DIODE 12V 26V SOT23;
| 型号： | GSOT12-E3-18 |
| 厂家： | 
VISHAY |
| 描述： | TVS DIODE 12V 26V SOT23 电视 |
| 文件： | 总10页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
Single-Line ESD Protection in SOT-23
FEATURES
• Single-line ESD protection device
3
• ESD immunity acc. IEC 61000-4-2
30 kV contact discharge
30 kV air discharge
• ESD capability according to AEC-Q101:
1
2
human body model: class H3B: > 8 kV
20512
20421
1
• Space saving SOT-23 package
• e3 - Sn
MARKING (example only)
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
YYY
20357
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS AVAILABLE
3
D
3D Models
Models
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PACKAGING CODE
PART
NUMBER
(EXAMPLE)
RoHS-COMPLIANT +
LEAD (Pb)-FREE
STANDARD GREEN
ORDERING CODE
(EXAMPLE)
3K PER 7" REEL
(8 mm TAPE),
10K PER 13" REEL
(8 mm TAPE),
10K/BOX = MOQ
AEC-Q101
QUALIFIED
TIN
PLATED
15K/BOX = MOQ
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
GSOT05-
E
E
E
E
3
3
3
3
3
3
3
3
-08
-08
-08
-08
GSOT05-E3-08
GSOT05-G3-08
GSOT05-HE3-08
GSOT05-HG3-08
GSOT05-E3-18
GSOT05-G3-18
GSOT05-HE3-18
GSOT05-HG3-18
G
G
G
G
H
H
-18
-18
-18
-18
H
H
PACKAGE DATA
MOLDING
COMPOUND
FLAMMABILITY SENSITIVITY LEVEL
RATING
DEVICE PACKAGE TYPE ENVIRONMENTAL
MOISTURE
WEIGHT
SOLDERING CONDITIONS
NAME
NAME
CODE
STATUS
03
03G
04
04G
05
05G
08
08G
12
12G
15
15G
24
24G
36
36G
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
GSOT03
GSOT04
GSOT05
GSOT08
GSOT12
GSOT15
GSOT24
GSOT36
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
UL 94 V-0
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
Peak temperature max. 260 °C
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
Rev. 2.8, 17-Apr-2019
Document Number: 85807
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS GSOT03
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
30
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
369
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT04
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
30
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
429
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT05
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
30
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
480
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT08
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
18
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
345
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
Rev. 2.8, 17-Apr-2019
Document Number: 85807
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS GSOT12
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
12
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
312
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT15
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
8
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
230
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT24
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
235
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
ABSOLUTE MAXIMUM RATINGS GSOT36
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Pin 3 to 1
Peak pulse current
IPPM
3.5
A
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Pin 3 to 1
Peak pulse power
ESD immunity
PPP
248
W
acc. IEC 61000-4-5, tp = 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
30
30
kV
kV
°C
°C
VESD
Operating temperature
Storage temperature
TJ
-40 to +125
-55 to +150
TSTG
Rev. 2.8, 17-Apr-2019
Document Number: 85807
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
BiAs-MODE (1-line Bidirectional Asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and
pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is
between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and
pin 3 offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the breakdown voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakdown voltage (VBR) level plus the voltage drop at the series impedance (resistance
and inductance) of the protection diode.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction
through the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behavior is Bidirectional and
Asymmetrical (BiAs).
L1
3
BiAs
1
2
Ground
20422
ELECTRICAL CHARACTERISTICS GSOT03 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 100 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
-
1
3.3
-
Reverse stand-off voltage
Reverse voltage
-
3.3
-
-
V
Reverse current
at VR = 3.3 V
IR
-
100
5.5
7.5
12.3
1.2
-
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
4
-
4.6
5.7
10
1
at IPP = 1 A
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 30 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 1.6 V; f = 1 MHz
-
4.5
420
260
V
-
600
-
pF
pF
CD
-
ELECTRICAL CHARACTERISTICS GSOT04 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 20 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
-
4
-
5
-
-
-
-
-
-
1
4
Reverse stand-off voltage
Reverse voltage
-
-
-
V
Reverse current
at VR = 4 V
IR
-
20
7
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
6.1
7.5
11.2
1
at IPP = 1 A
9
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 30 A
at IPP = 1 A
14.3
1.2
-
V
V
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2 V; f = 1 MHz
4.5
310
200
V
450
-
pF
pF
CD
Rev. 2.8, 17-Apr-2019
Document Number: 85807
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS GSOT05 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 10 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
-
-
5
-
6
-
-
-
-
-
-
Reverse stand-off voltage
Reverse voltage
-
5
-
-
V
Reverse current
at VR = 5 V
IR
-
10
8
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
6.8
7
at IPP = 1 A
8.7
16
1.2
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 30 A
at IPP = 1 A
12
1
V
V
at IPP = IPPM = 30 A
at VR = 0 V; f = 1 MHz
at VR = 2.5 V; f = 1 MHz
4.5
260
150
V
350
-
pF
pF
CD
ELECTRICAL CHARACTERISTICS GSOT08 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 5 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
MAX.
UNIT
lines
V
Protection paths
Reverse stand-off voltage
Reverse voltage
-
-
-
-
-
-
1
8
-
8
-
V
Reverse current
at VR = 8 V
IR
5
μA
Reverse breakdown voltage
at IR = 1 mA
at IPP = 1 A
VBR
9
-
-
-
-
-
-
10
10.7
15.2
1
11
13
19.2
1.2
-
V
V
Reverse clamping voltage
VC
at IPP = IPPM = 18 A
at IPP = 1 A
V
V
Forward clamping voltage
Capacitance
VF
at IPP = IPPM = 18 A
at VR = 0 V; f = 1 MHz
at VR = 4 V; f = 1 MHz
3
V
160
80
250
-
pF
pF
CD
ELECTRICAL CHARACTERISTICS GSOT12 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
-
Reverse stand-off voltage
Reverse voltage
-
-
12
-
12
-
V
Reverse current
at VR = 12 V
IR
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
13.5
15
15.4
21.2
1
16.5
18.7
26
1.2
-
at IPP = 1 A
-
-
-
-
-
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 12 A
at IPP = 1 A
V
V
at IPP = IPPM = 12 A
at VR = 0 V; f = 1 MHz
at VR = 6 V; f = 1 MHz
2.2
115
50
V
150
-
pF
pF
CD
Rev. 2.8, 17-Apr-2019
Document Number: 85807
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS GSOT15 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
-
Reverse stand-off voltage
Reverse voltage
-
-
15
-
15
-
V
Reverse current
at VR = 15 V
IR
-
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
16.5
18
19.4
24.8
1
20
23.5
28.8
1.2
-
at IPP = 1 A
-
-
-
-
-
-
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 8 A
V
at IPP = 1 A
V
at IPP = IPPM = 8 A
1.8
90
35
V
at VR = 0 V; f = 1 MHz
at VR = 7.5 V; f = 1 MHz
120
-
pF
pF
CD
ELECTRICAL CHARACTERISTICS GSOT24 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
-
-
Reverse stand-off voltage
Reverse voltage
-
24
-
24
-
-
V
Reverse current
at VR = 24 V
IR
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
27
-
30
34
41
1
33
41
47
1.2
-
at IPP = 1 A
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 5 A
-
V
at IPP = 1 A
-
V
at IPP = IPPM = 5 A
-
1.4
65
20
V
at VR = 0 V; f = 1 MHz
at VR = 12 V; f = 1 MHz
-
80
-
pF
pF
CD
-
ELECTRICAL CHARACTERISTICS GSOT36 (Tamb = 25 °C unless otherwise specified)
between pin 3 and pin 1
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
Max. reverse working voltage
at IR = 1 μA
SYMBOL
Nchannel
VRWM
VR
MIN.
TYP.
-
MAX.
1
UNIT
lines
V
Protection paths
-
-
Reverse stand-off voltage
Reverse voltage
-
36
-
36
-
-
V
Reverse current
at VR = 36 V
IR
-
1
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
39
-
43
49
59
1
47
60
71
1.2
-
at IPP = 1 A
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
at IPP = IPPM = 3.5 A
at IPP = 1 A
-
V
-
V
at IPP = IPPM = 3.5 A
at VR = 0 V; f = 1 MHz
at VR = 18 V; f = 1 MHz
-
1.3
52
12
V
-
65
-
pF
pF
CD
-
Rev. 2.8, 17-Apr-2019
Document Number: 85807
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
Axis Title
Axis Title
10000
100
10
10000
1000
100
120
100
80
Rise time = 0.7 ns to 1 ns
1000
1
60
53
0.1
40
27
100
0.01
0.001
20
10
0
10
0.5
0.6
0.7
0.8
0.9
-10
0
10 20 30 40 50 60 70 80 90 100
VF (V)
t (ns)
Fig. 1 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 4 - ESD Discharge Current Waveform
According to IEC 61000-4-2 (330 / 150 pF)
Axis Title
Axis Title
50
45
40
35
30
25
20
15
10
5
10000
1000
100
10000
Pin 3 to 1
GSOT36
8 µs to 100 %
100
80
60
40
20
0
TJ = 25 °C
1000
100
10
GSOT24
GSOT15
20 µs to 50 %
GSOT12
GSOT08
0
0.01
10
1
100
IR (µA)
10 000
0
10
20
30
40
t (µs)
Fig. 2 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 5 - 8/20 μs Peak Pulse Current Waveform
According to IEC 61000-4-5
Axis Title
8
7
6
5
4
3
2
1
0
10000
1000
100
40
GSOT15
Transmission line pulse (TLP):
Pin 3 to 1
GSOT05
GSOT04
GSOT03
35
30
25
20
15
10
5
GSOT12
GSOT08
TJ = 25 °C
GSOT05
GSOT04
GSOT03
10
0
0.01
1
100
IR (µA)
10 000
0
20
40
60
ITLP (A)
80
100
Fig. 3 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current
Rev. 2.8, 17-Apr-2019
Document Number: 85807
7
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
Axis Title
10000
120
100
80
60
40
20
0
65
60
55
50
45
40
35
30
25
20
15
10
5
Transmission line pulse (TLP):
GSOT36
GSOT24
GSOT36
GSOT24
1000
100
Measured according IEC 61000-4-5
(8/20 µs - wave form)
0
10
0
20
40
60
ITLP (A)
80
100
0
2
4
6
8
10
IPP (A)
Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current
Fig. 9 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Axis Title
Axis Title
30
25
20
15
10
5
10000
1000
100
1000
100
10
10000
1000
100
GSOT15
GSOT12
f = 1 MHz
GSOT03
GSOT04
GSOT05
GSOT08
GSOT05
GSOT04
GSOT08
GSOT03
GSOT12
GSOT15
GSOT24
Measured according IEC 61000-4-5
(8/20 µs - wave form)
GSOT36
0
10
10
0
20
40
60
0.01
0.1
1
10
100
IPP (A)
VR (V)
Fig. 8 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Fig. 10 - Typical Capacitance vs. Reverse Voltage
Rev. 2.8, 17-Apr-2019
Document Number: 85807
8
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSOT03 to GSOT36
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
8°
to
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0°
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Foot print recommendation:
0.7 (0.028)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23. Sep. 2009
17418
Unreeling direction
SOT-23
Orientation in carrier tape
SOT-23
S8-V-3929.01-006 (4)
04.02.2010
22607
Top view
Rev. 2.8, 17-Apr-2019
Document Number: 85807
9
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
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