GBU4K/51-E3 [VISHAY]
DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode;
| 型号： | GBU4K/51-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode |
| 文件： | 总3页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBU4A thru GBU4M
Vishay Semiconductors
Glass Passivated Single-Phase
Bridge Rectifier
Major Ratings and Characteristics
Case Style GBU
IF(AV)
VRRM
IFSM
IR
4 A
50 V to 1000 V
150 A
5 µA
VF
1.0 V
Tj max.
150 °C
Features
Mechanical Data
• UL Recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
Case: GBU
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
• High case dielectric strength of 1500 V
• Solder Dip 260 °C, 40 seconds
RMS
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Monitor, TV, Printer, Switching Mode
Power Supply, Adapter, Audio equipment, and Home
Appliances applications.
Maximum Ratings
TA = 25 °C, unless otherwise specified
Parameter
Maximum repetitive peak
Symbols GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Units
VRRM
50
100
200
400
600
800
1000
V
reverse voltage
Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
4.0
420
600
560
800
700
V
V
A
Maximum DC blocking voltage
100
1000
TC =100°C(1)
TA = 40 °C(2)
Maximum average forward
rectified output current at
IF(AV)
3.0
Peak forward surge current
single sine-wave superimposed
on rated load
IFSM
150
A
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
93
Operating junction and storage
temperature range
TJ,TSTG
- 55 to + 150
Note:
(1) Unit case mounted on 1.6 x 1.6 x 0.06" thick (4.0 x 4.0 x 0.15 cm) Al. Plate
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
Document Number 88614
29-Jul-05
www.vishay.com
1
GBU4A thru GBU4M
Vishay Semiconductors
Electrical Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Test condition Symbols GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Units
Maximum instantaneous
forward drop per leg
at 4.0 A
VF
1.0
V
Maximum DC reverse
current at rated DC
blocking voltage per leg
TA = 25 °C
TA = 125 °C
IR
5.0
500
µA
Typical junction
at 4.0 A, 1 MHz
CJ
100
45
pF
capacitance per leg
Thermal Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Symbols GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M
Units
°C/W
(2)
Typical thermal resistance per leg
22
RθJA
RθJC
(1)
4.2
Note:
(1) Unit case mounted on AI plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12 mm) copper pads and 0.375” (9.5 mm) lead length
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
150
100
4.0
3.0
2.0
1.0
0
Heatsink Mounting, T
1.6 x 1.6 x 0.06" Thk
(4.0 x 4.0 x .15 cm) AL. Plate
C
TJ = TJ max.
Single Sine-Wave
50
0
P.C.B. Mounting, TA
0.47 x 0.47" (12 x 12 mm) Copper Pads
0.375" (9.5 mm) Lead Length
60 HZ Resistive or Inductive Load
1.0 Cycle
10
Number of Cycles at 60 HZ
1
100
0
50
100
150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Leg
www.vishay.com
Document Number 88614
29-Jul-05
2
GBU4A thru GBU4M
Vishay Semiconductors
100
10
1,000
T = 25°C
J
f = 1.0MHZ
Vsig = 50mVp-p
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
100
0.1
0.01
50 - 400V
600 - 1000V
10
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Leg
Figure 5. Typical Junction Capacitance Per Leg
100
500
50 - 400V
600 - 1000V
100
TJ = 125°C
10
10
1
1
0.1
TJ = 25°C
60
0.1
0.01
0.01
0
20
40
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Heating Time (sec.)
Figure 4. Typical Reverse Leakage Characteristics Per Leg
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
Case Type GBU
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
o
0.125 (3.2) x 45
CHAMFE
R
o
9
TYP
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
.
0.740 (18.8)
0.720 (18.3)
0.075
0.085 (2.16)
0.065 (1.65)
(2.03)
(1.52)
0.080
0.060
(1.9)
.
R
o
TYP
5
.
0.085 (2.16)
0.710 (18.0)
0.075 (1.90)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.022 (0.56)
0.018 (0.46)
(4.83)
0.080 (2.03)
0.065(1.65)
0.190
(5.33)
0.210
Polarity shown on front side of case, positive lead by beveled corner
Document Number 88614
29-Jul-05
www.vishay.com
3
相关型号：
GBU4KE3-E3
DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode
VISHAY
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