GBU4KE3-E3 [VISHAY]

DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode;
GBU4KE3-E3
型号: GBU4KE3-E3
厂家: VISHAY    VISHAY
描述:

DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode

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GBU4A thru GBU4M  
VISHAY  
Vishay Semiconductors  
Glass Passivated Single-Phase  
Bridge Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
4 A  
50 V to 1000 V  
150 A  
5 µA  
VF  
1.0 V  
Tj max.  
150 °C  
Features  
• UL Recognition file number E54214  
Case Style GBU  
• Ideal for printed circuit boards  
• High surge current capability  
• High case dielectric strength of 1500 V  
• Meets MSL level 1, per J-STD-020C  
RMS  
Typical Applications  
Mechanical Data  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Monitor, TV, Printer, Switching Mode  
Power Supply, Adapter, Audio equipment, and Home  
Appliances applications.  
Case: GBU  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte Tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and MIL-STD-750, Method  
2026  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Unit  
Maximum repetive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum RMS voltage  
Maximum DC blocking voltage  
100  
1000  
TC = 100 °C (1)  
TA = 40 °C (2)  
Maximum average forward  
rectified output current at  
IF(AV)  
4.0  
3.0  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
150  
A
I2t  
TJ,  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
93  
Operating junction and storage temperature  
range  
- 55 to + 150  
TSTG  
Note:  
(1) Unit case mounted on 1.6 x 1.6 x 0.06” thick (4.0 x 4.0 x 0.15 cm) Al. Plate  
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) copper pads and 0.375” (9.5 mm) lead length  
Document Number 88614  
23-Nov-04  
www.vishay.com  
1
GBU4A thru GBU4M  
Vishay Semiconductors  
VISHAY  
Electrical Characteristics  
TA = 25 °C, unless otherwise specified  
Parameter  
Test condition Symbol GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M Unit  
Maximum instantaneous forward  
drop per leg  
at 4.0 A  
VF  
1.0  
V
Maximum DC reverse current at  
rated DC blocking voltage per leg  
TA = 25 °C  
IR  
5.0  
500  
µA  
TA = 125 °C  
Typicaljunctioncapacitanceperleg at 4.0 A, 1MHz  
CJ  
100  
45  
pF  
Thermal Characteristics  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
GBU4A GBU4B GBU4D GBU4G GBU4J GBU4K GBU4M  
Unit  
(2)  
Typical thermal resistance per leg  
22  
°C/W  
RθJA  
(1)  
4.2  
RθJC  
Note:  
(1) Unit case mounted on Al plate heatsink  
(2) Units mounted on P.C.B with 0.5 x 0.5” (12 x 12 mm) Copper pads and 0.375” (9.5 mm) lead length  
www.vishay.com  
2
Document Number 88614  
23-Nov-04  
GBU4A thru GBU4M  
VISHAY  
Vishay Semiconductors  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
500  
100  
8.0  
Heatsink Mounting, T  
C
TJ = 125°C  
6.0  
4.0  
10  
1
P.C.B. Mounting, T  
A
2.0  
0
0.1  
0.01  
TJ = 25°C  
0
50  
100  
150  
0
20  
40  
60  
80  
100  
Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 1. Derating Curve Output Rectified Current  
Figure 4. Typical Reverse Leakage Characteristics Per Leg  
1,000  
150  
TJ = 25°C  
f = 1.0 MHz  
Vsig = 50mVp-p  
T
= T max.  
J
J
single sine-wave  
(JEDEC Method)  
100  
50  
0
100  
1.0 Cycle  
10  
0.1  
1
10  
100  
1
10  
Number of Cycles at 60 Hz  
100  
Reverse Voltage (V)  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
Per Leg  
Figure 5. Typical Junction Capacitance Per Leg  
100  
100  
10  
10  
TJ = 25°C  
Pulse Width = 300µs  
1% Duty Cycle  
1
1
0.1  
0.01  
0.1  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.01  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
t, Heating Time (sec.)  
Figure 6. Typical Transient Thermal Impedance  
Figure 3. Typical Forward Characteristics Per Leg  
Document Number 88614  
23-Nov-04  
www.vishay.com  
3
GBU4A thru GBU4M  
Vishay Semiconductors  
VISHAY  
Package Dimensions in Inches (millimeters)  
0.140 (3.56)  
0.130 (3.30)  
0.880 (22.3)  
0.860 (21.8)  
0.020 R (TYP.)  
o
0.125 (3.2) x 45  
CHAMFER  
o
9
TYP  
0.160 (4.1)  
0.140 (3.5)  
0.310 (7.9)  
0.290 (7.4)  
0.740 (18.8)  
0.720 (18.3)  
0.075  
0.085 (2.16)  
0.065 (1.65)  
(2.03)  
(1.52)  
0.080  
0.060  
(1.9)  
R
o
5
TYP  
0.085 (2.16)  
0.075 (1.90)  
0.710 (18.0)  
0.690 (17.5)  
0.100 (2.54)  
0.085 (2.16)  
0.050 (1.27)  
0.040 (1.02)  
0.026 (0.66)  
0.020 (0.51)  
(4.83)  
(5.33)  
0.080 (2.03)  
0.065 (1.65)  
0.190  
0.210  
Polarity shown on front side of case, positive lead by beveled corner  
www.vishay.com  
4
Document Number 88614  
23-Nov-04  

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