G2SBA20/1 [VISHAY]

Bridge Rectifier Diode, 1.5A, 200V V(RRM),;
G2SBA20/1
型号: G2SBA20/1
厂家: VISHAY    VISHAY
描述:

Bridge Rectifier Diode, 1.5A, 200V V(RRM),

二极管
文件: 总2页 (文件大小:21K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
G2SBA20 thru G2SBA80  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated Single-Phase  
Bridge Rectifier  
Reverse Voltage 200 thru 800 V  
Forward Current 1.5 A  
Case Type GBL  
0.825 (20.9)  
0.815 (20.7)  
0.125 (3.17)  
x 45 degrees  
Chamfer  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• High case dielectric strength  
• Ideal for printed circuit boards  
• Glass passivated chip junction  
• High surge current capability  
• High temperature soldering guaranteed:  
260°C/10 seconds, 0.375 (9.5mm) lead length,  
5lbs. (2.3kg) tension  
0.421 (10.7)  
0.411 (10.4)  
0.080 (2.03)  
0.060 (1.50)  
0.098 (2.5)  
0.075 (1.9)  
0.718 (18.2)  
0.682 (17.3)  
Lead Depth  
0.095 (2.41)  
0.080 (2.03)  
0.098 (2.5)  
0.075 (1.9)  
0.022 (0.56)  
0.018 (0.46)  
0.043 (1.1)  
0.035 (0.9)  
Mechanical Data  
Case: Molded plastic body over passivated junctions  
(5.3)  
(4.8)  
0.210  
0.190  
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
0.040 (1.02)  
0.030 (0.76)  
Mounting Position: Any  
Weight: 0.071 oz., 2.0 g  
0.140 (3.56)  
0.128 (3.25)  
0.022 (0.56)  
0.018 (0.46)  
Packaging codes/options:  
Polarity shown on front side of case, positive lead beveled corner.  
1/400 EA. per Bulk Tray Stack  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
VRMS  
VDC  
G2SBA20 G2SBA60  
G2SBA80  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
200  
140  
200  
600  
420  
600  
800  
560  
V
Maximum DC blocking voltage  
800  
V
Maximum average forward  
IF(AV)  
1.5  
A
A
rectified output current at TA=25OC  
Peak forward surge current single  
sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
I2t  
60  
15  
Rating for fusing (t<8.3ms)  
A2sec  
°C/W  
°C  
RΘJA  
RΘJL  
40  
12  
Typical thermal resistance per leg  
Operating junction storage and temperature range  
TJ, TSTG  
-55 to +150  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
G2SBA20 G2SBA60  
G2SBA80  
Unit  
Maximum instantaneous forward voltage  
drop per leg at 0.75 A  
VF  
1.00  
V
Maximum DC reverse current at rated  
DC blocking voltage per leg  
TA= 25°C  
TA=125°C  
5.0  
300  
IR  
µA  
Notes:  
(1) Unit mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length  
Document Number 88604  
07-Oct-02  
www.vishay.com  
1
G2SBA20 thru G2SBA80  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 1 - Derating Curve Output  
Fig. 2 - Maximum Non-Repetitive Peak Forward  
Surge Current Per Leg  
Rectified Current  
2
100  
P.C.B. Mounting, T  
A
80  
60  
40  
1.5  
1
0.5  
0
20  
0
1.0 Cycle  
1
100  
0
25  
50  
75  
100  
125  
150  
Number of Cycles at 60 Hz  
Temperature (°C)  
Fig. 3 - Typical Forward Characteristics  
Per Leg  
Fig. 4 - Typical Reverse Characteristics  
Per Leg  
100  
10  
100  
10  
1
T
= 125°C  
A
1
0.1  
0.1  
T
= 25°C  
A
0.01  
0.01  
0.6  
1
1.4  
1.8  
2.2  
2.6  
3
3.4  
0
20  
40  
60  
80  
100  
Instantaneous Forward Voltage (V)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 5 - Typical Junction Capacitance  
Per Leg  
Fig. 6 - Typical Transient Thermal  
Impedance  
100  
100  
10  
10  
1
0.1  
1
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Reverse Voltage (V)  
t, Heating Time (sec.)  
www.vishay.com  
2
Document Number 88604  
07-Oct-02  

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