G2SBA20/51 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, PLASTIC, CASE GBL, 4 PIN;
| 型号： | G2SBA20/51 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, PLASTIC, CASE GBL, 4 PIN 二极管 |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G2SBA20, G2SBA60 & G2SBA80
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• Typical I less than 0.1 µA
R
~
~
• High case dielectric strength
• Solder dip 260 °C, 40 s
~
~
Case Type GBL
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
IFSM
IR
200 V, 600 V, 800 V
MECHANICAL DATA
Case: GBL
60 A
5 µA
Epoxy meets UL 94V-0 flammability rating
VF
1.0 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
TJ max.
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
G2SBA20
G2SBA60
600
G2SBA80
800
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
200
V
V
V
VRMS
140
420
560
Maximum DC blocking voltage
VDC
200
600
800
Maximum average forward rectified output
current at TA = 25 °C
IF(AV)
1.5
60
A
Peak forward surge current single sine-wave superimposed
on rated load
IFSM
A
Rating for fusing (t < 8.3 ms)
I2t
15
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS SYMBOL
G2SBA20
G2SBA60
G2SBA80
UNIT
Maximum instantaneous forward
voltage drop per diode
0.75 A
VF
IR
1.00
V
Maximum DC reverse current at
rated DC blocking voltage per diode
T
T
A = 25 °C
A = 125 °C
5.0
300
µA
Document Number: 88604
Revision: 12-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
G2SBA20, G2SBA60 & G2SBA80
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
G2SBA20
G2SBA60
G2SBA80
UNIT
RθJA
RθJC
40
12
Typical thermal resistance
°C/W
Note:
(1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
G2SBA60-E3/45
G2SBA60-E3/51
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
2.017
45
51
20
Tube
2.017
400
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
2.0
100
10
P.C.B. Mounting, TA
1.5
1.0
0.5
0
1
0.1
0.01
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0
25
50
75
100
125
150
Instantaneous Forward Voltage (V)
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 3. Typical Forward Characteristics Per Diode
100
100
TA = 125 °C
80
60
40
20
0
10
1
0.1
TA = 25 °C
40
1.0 Cycle
0.01
0
20
60
80
100
1
10
Number of Cycles at 60 Hz
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88604
Revision: 12-Feb-08
G2SBA20, G2SBA60 & G2SBA80
Vishay General Semiconductor
100
10
1
100
10
1
0.1
0.01
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBL
0.825 (20.9)
0.815 (20.7)
0.125 (3.17) x 45°
Chamfer
0.421 (10.7)
0.411 (10.4)
0.080 (2.03)
0.060 (1.50)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.050 (1.27)
0.040 (1.02)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
0.026 (0.66)
0.140 (3.56)
0.128 (3.25)
0.020 (0.51)
Polarity shown on front side of case, positive lead beveled corner
Document Number: 88604
Revision: 12-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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