G2SB80-E3/45 [VISHAY]
RECTFR BRIDGE SGL 800V 1.5A 4PIN CASE GBL - Rail/Tube;
| 型号： | G2SB80-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | RECTFR BRIDGE SGL 800V 1.5A 4PIN CASE GBL - Rail/Tube 二极管 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G2SB20, G2SB60, G2SB80
Vishay General Semiconductor
www.vishay.com
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• Typical IR less than 0.1 μA
~
• High case dielectric strength
~
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
Case Type GBL
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, SMPS, adapter, audio equipment,
and home appliances application.
PRIMARY CHARACTERISTICS
Package
GBL
IF(AV)
1.5 A
MECHANICAL DATA
VRRM
IFSM
200 V, 600 V, 800 V
Case: GBL
80 A
5 μA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IR
VF at IF = 0.75 V
TJ max.
1.0 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
150 °C
In-Line
Diode variations
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G2SB20
G2SB60
600
G2SB80
800
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
200
V
V
V
VRMS
140
420
560
Maximum DC blocking voltage
VDC
200
600
800
Maximum average forward rectified output current
at TA = 25 °C
IF(AV)
1.5
80
A
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
A
Rating for fusing (t < 8.3 ms)
I2t
27
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
G2SB20
G2SB60
G2SB80
UNIT
Maximum instantaneous forward
voltage drop per diode
0.75 A
VF
1.00
V
TA = 25 °C
5.0
Maximum DC reverse current at
rated DC blocking voltage per diode
IR
μA
TA = 125 °C
300
Revision: 16-Aug-13
Document Number: 88603
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G2SB20, G2SB60, G2SB80
Vishay General Semiconductor
www.vishay.com
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
G2SB20
G2SB60
40
G2SB80
UNIT
RJA
Typical thermal resistance
°C/W
RJC
12
Note
•
Unit mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
ORDERING INFORMATION (Example)
PREFERRED P/N
G2SB60-E3/45
G2SB60-E3/51
UNIT WEIGHT (g)
2.045
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
45
51
20
Tube
2.045
400
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
2.0
1.5
100
10
PCB Mounting, TA
1
1.0
0.5
0
0.1
0.01
0
25
50
75
100
125
150
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
100
80
60
40
20
0
100
TA = 125 °C
10
1
0.1
TA = 25 °C
40
1.0 Cycle
0.01
0
20
60
80
100
1
10
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Fig. 4 - Typical Reverse Characteristics Per Diode
Current Per Diode
Revision: 16-Aug-13
Document Number: 88603
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
G2SB20, G2SB60, G2SB80
Vishay General Semiconductor
www.vishay.com
100
10
1
100
10
1
0.1
0.01
0.01
0.1
1
10
100
0.1
1
10
100
t - Heating Time (s)
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBL
0.825 (20.9)
0.815 (20.7)
0.125 (3.17) x 45°
Chamfer
0.421 (10.7)
0.411 (10.4)
0.080 (2.03)
0.060 (1.50)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.050 (1.27)
0.040 (1.02)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.210 (5.3)
0.190 (4.8)
0.040 (1.02)
0.030 (0.76)
0.022 (0.56)
0.140 (3.56)
0.128 (3.25)
0.018 (0.46)
Polarity shown on front side of case, positive lead beveled corner
Revision: 16-Aug-13
Document Number: 88603
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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