G2SB80/72-E4 [VISHAY]
DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode;
| 型号： | G2SB80/72-E4 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode 二极管 |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G2SB20 thru G2SB80
New Product
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifier
Reverse Voltage 200 to 800V
Forward Current 1.5A
Case Type GBL
0.825 (20.9)
0.815 (20.7)
0.125 (3.17)
x 45 degrees
Chamfer
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under the Recognized
Component Index, file number E54214
0.421 (10.7)
0.411 (10.4)
0.080 (2.03)
0.060 (1.50)
• High case dielectric strength
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
• High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.022 (0.56)
0.018 (0.46)
0.043 (1.1)
0.035 (0.9)
Mechanical Data
Case: Molded plastic body over passivated junctions
(5.3)
(4.8)
0.210
0.190
0.040 (1.02)
0.030 (0.76)
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight: 0.071 oz., 2.0 g
Packaging codes/options:
0.140 (3.56)
0.128 (3.25)
0.022 (0.56)
0.018 (0.46)
Polarity shown on front side of case, positive lead beveled corner.
Dimensions in inches and (millimeters)
1/400 EA. per Bulk Tray Stack, 4K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
VRRM
VRMS
VDC
G2SB20
G2SB60
G2SB80
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
200
600
800
140
420
560
V
Maximum DC blocking voltage
200
600
800
V
Maximum average forward
rectified output current at TA = 25°C
IF(AV)
1.5
A
Peak forward surge current single
sine-wave superimposed on rated load (JEDEC Method)
IFSM
I2t
80
27
A
Rating for fusing (t<8.3ms)
A2sec
°C/W
°C
RθJA
RθJL
40
12
Typical thermal resistance per leg
Operating junction storage and temperature range
TJ, TSTG
–55 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
G2SB20
G2SB60
G2SB80
Unit
Maximum instantaneous forward voltage
drop per leg at 0.75 A
VF
1.00
V
Maximum DC reverse current at rated
DC blocking voltage per leg
TA = 25°C
TA =125°C
5.0
300
IR
µA
Note: (1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
Document Number 88603
21-Mar-02
www.vishay.com
1
G2SB20 thru G2SB80
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Derating Curve Output
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Leg
Rectified Current
2
100
P.C.B. Mounting, T
A
80
60
40
1.5
1
0.5
0
20
0
1.0 Cycle
1
100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Temperature (°C)
Fig. 3 - Typical Forward Characteristics
Per Leg
Fig. 4 - Typical Reverse Characteristics
Per Leg
100
10
100
10
1
T
= 125°C
A
1
0.1
0.1
T
= 25°C
A
0.01
0.01
0
20
40
60
80
100
0.6
1
1.4
1.8
2.2
2.6
3
3.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
Per Leg
Fig. 6 - Typical Transient Thermal
Impedance
100
100
10
10
1
0.1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Heating Time (sec.)
www.vishay.com
2
Document Number 88603
21-Mar-02
相关型号：
G2SB80E3
DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode
VISHAY
G2SBA20-E3
DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBL, 4 PIN, Bridge Rectifier Diode
VISHAY
G2SBA20-E3/1
Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, CASE GBL, 4 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明