ESH2C-HE3 [VISHAY]
DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode;型号: | ESH2C-HE3 |
厂家: | VISHAY |
描述: | DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode 功效 瞄准线 光电二极管 |
文件: | 总4页 (文件大小:354K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESH2B, ESH2C & ESH2D
New Product
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifiers
Major Ratings and Characteristics
IF(AV)
VRRM
trr
2 A
100 V, 150 V, 200 V
25 ns
VF
0.93 V
TJ max.
175 °C
DO-214AA (SMB)
Features
Mechanical Data
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• Meets MSL level 1 per J-STS-020C
• Solder Dip 260 °C, 40 seconds
Polarity: Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converter and
inverter for both consumer and automotive
Maximum Ratings
TA = 25 °C, unless otherwise specified
Parameter
Symbol
ESH2B
EHB
ESH2C
EHC
ESH2D
EHD
Unit
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
150
200
V
V
V
A
A
70
105
150
2.0
60
140
200
Maximum DC blocking voltage
100
Maximum average forward rectified current (Fig. 1)
IF(AV)
IFSM
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
Document Number 84649
17-Oct-05
www.vishay.com
1
ESH2B, ESH2C & ESH2D
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VF
Value
0.93
Unit
V
at IF = 2 A(1)
Maximum instantaneous forward
voltage
Maximum DC reverse current at TA = 25 °C
rated DC blocking voltage
IR
2.0
50
µA
TA = 125 °C
Maximum reverse recovery time at IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
trr
25
ns
ns
Typical reverse recovery time
at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C
35
55
TJ = 100 °C
Typical stored charge
at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C
TJ = 100 °C
Qrr
CJ
20
35
nC
pF
Typical junction capacitance
Note:
at 4.0 V, 1 MHz
30
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C, unless otherwise specified
Parameter
Typical thermal resistance(1)
Symbol
RθJA
RθJL
ESH2B
ESH2C
ESH2D
Unit
65
20
°C/W
Note:
(1) Units mounted on P.C.B. with 8.0 x 8.0 mm land areas.
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
2.5
2
60
50
40
30
20
10
0
1.5
1
0.5
0
0
25
50
75
100
125
150
175
1
10
Number of Cycles at 60 Hz
100
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 84649
17-Oct-05
2
ESH2B, ESH2C & ESH2D
Vishay General Semiconductor
100
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
10
1
0.1
TJ = 25 °C
1
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
1.4
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
1000
TJ = 175 °C
100
TJ
= 150 °C
= 125 °C
10
1
T
J
10
0.1
TJ = 25 °C
1
0.01
0.01
0.1
1
10
100
20
40
60
80
100
tp-Pulse Duration (sec.)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package dimensions in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.086 (2.20)
0.155 (3.94)
0.130 (3.30)
0.077 (1.95)
0.086 MIN.
(2.18 MIN.)
0.180 (4.57)
0.060 MIN.
(1.52 MIN.)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.220 REF
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number 84649
17-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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