ESH2C-HE3 [VISHAY]

DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode;
ESH2C-HE3
型号: ESH2C-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode

功效 瞄准线 光电二极管
文件: 总4页 (文件大小:354K)
中文:  中文翻译
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ESH2B, ESH2C & ESH2D  
New Product  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifiers  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
trr  
2 A  
100 V, 150 V, 200 V  
25 ns  
VF  
0.93 V  
TJ max.  
175 °C  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High forward surge capability  
Case: DO-214AA (SMB)  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Meets MSL level 1 per J-STS-020C  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converter and  
inverter for both consumer and automotive  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
ESH2B  
EHB  
ESH2C  
EHC  
ESH2D  
EHD  
Unit  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
150  
200  
V
V
V
A
A
70  
105  
150  
2.0  
60  
140  
200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Document Number 84649  
17-Oct-05  
www.vishay.com  
1
ESH2B, ESH2C & ESH2D  
Vishay General Semiconductor  
Electrical Characteristics  
TA = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VF  
Value  
0.93  
Unit  
V
at IF = 2 A(1)  
Maximum instantaneous forward  
voltage  
Maximum DC reverse current at TA = 25 °C  
rated DC blocking voltage  
IR  
2.0  
50  
µA  
TA = 125 °C  
Maximum reverse recovery time at IF = 0.5 A, IR = 1 A, Irr = 0.25 A  
trr  
trr  
25  
ns  
ns  
Typical reverse recovery time  
at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C  
35  
55  
TJ = 100 °C  
Typical stored charge  
at IF = 2 A, VR = 30 V di/dt = 50 A/µs, Irr = 10 % IRM TJ = 25 °C  
TJ = 100 °C  
Qrr  
CJ  
20  
35  
nC  
pF  
Typical junction capacitance  
Note:  
at 4.0 V, 1 MHz  
30  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
Thermal Characteristics  
TA = 25 °C, unless otherwise specified  
Parameter  
Typical thermal resistance(1)  
Symbol  
RθJA  
RθJL  
ESH2B  
ESH2C  
ESH2D  
Unit  
65  
20  
°C/W  
Note:  
(1) Units mounted on P.C.B. with 8.0 x 8.0 mm land areas.  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
2.5  
2
60  
50  
40  
30  
20  
10  
0
1.5  
1
0.5  
0
0
25  
50  
75  
100  
125  
150  
175  
1
10  
Number of Cycles at 60 Hz  
100  
Lead Temperature (°C)  
Figure 1. Maximum Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 84649  
17-Oct-05  
2
ESH2B, ESH2C & ESH2D  
Vishay General Semiconductor  
100  
100  
10  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
10  
1
0.1  
TJ = 25 °C  
1
0.01  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
1000  
TJ = 175 °C  
100  
TJ  
= 150 °C  
= 125 °C  
10  
1
T
J
10  
0.1  
TJ = 25 °C  
1
0.01  
0.01  
0.1  
1
10  
100  
20  
40  
60  
80  
100  
tp-Pulse Duration (sec.)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Leakage Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package dimensions in inches (millimeters)  
DO-214AA (SMB)  
Mounting Pad Layout  
Cathode Band  
0.085 MAX.  
(2.159 MAX.)  
0.086 (2.20)  
0.155 (3.94)  
0.130 (3.30)  
0.077 (1.95)  
0.086 MIN.  
(2.18 MIN.)  
0.180 (4.57)  
0.060 MIN.  
(1.52 MIN.)  
0.160 (4.06)  
0.012 (0.305)  
0.006 (0.152)  
0.220 REF  
0.096 (2.44)  
0.084 (2.13)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.220 (5.59)  
0.205 (5.21)  
Document Number 84649  
17-Oct-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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