ESH2CHE3_A/H [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN;
| 型号： | ESH2CHE3_A/H |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN 功效 瞄准线 光电二极管 |
| 文件： | 总5页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESH2B, ESH2C, ESH2D
Vishay General Semiconductor
www.vishay.com
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
DO-214AA (SMB)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converter and inverter for
both consumer and automotive.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
VRRM
trr
100 V, 150 V, 200 V
25 ns
VF at IF = 2 A
TJ max.
0.93 V
175 °C
Package
DO-214AA (SMB)
Single die
Diode variations
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH2B
EHB
100
ESH2C
EHC
150
ESH2D
EHD
200
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
70
105
140
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
100
150
200
IF(AV)
2.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
60
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
°C
Revision: 25-Feb-16
Document Number: 84649
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESH2B, ESH2C, ESH2D
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
0.93
2.0
50
UNIT
(1)
Maximum instantaneous forward voltage
IF = 2 A
VF
V
TA = 25 °C
Maximum DC reverse current
at rated DC blocking voltage
IR
trr
trr
µA
ns
ns
TA = 125 °C
Maximum reverse recovery time
Typical reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
25
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
35
IF = 2 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
55
20
IF = 2 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
Typical stored charge
Qrr
CJ
nC
pF
35
Typical junction capacitance
4.0 V, 1 MHz
30
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH2B
ESH2C
ESH2D
UNIT
(1)
RJA
65
Typical thermal resistance
°C/W
(1)
RJL
20
Note
(1)
Units mounted on PCB with 8.0 mm x 8.0 mm land areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
ESH2D-E3/52T
0.096
52T
5BT
52T
5BT
H
750
3200
750
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
ESH2D-E3/5BT
0.096
ESH2DHE3/52T (1)
ESH2DHE3/5BT (1)
ESH2DHE3_A/H (1)
ESH2DHE3_A/I (1)
0.096
0.096
3200
750
0.096
0.096
I
3200
Note
(1)
AEC-Q101 qualified
Revision: 25-Feb-16
Document Number: 84649
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESH2B, ESH2C, ESH2D
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
2.5
2.0
1.5
1.0
0.5
0
1000
100
10
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
0.01
0
25
50
75
100
125
150
175
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
60
100
50
40
30
20
10
0
10
1
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
10
TJ = 25 °C
0.1
1
0.01
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 25-Feb-16
Document Number: 84649
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESH2B, ESH2C, ESH2D
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 25-Feb-16
Document Number: 84649
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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