ESH1DHM3_A/I [VISHAY]
Rectifier Diode,;
| 型号： | ESH1DHM3_A/I |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESH1B, ESH1C, ESH1D
Vishay General Semiconductor
www.vishay.com
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Available
SMA (DO-214AC)
Cathode Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3
D
3D Models
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds AC/AC and DC/DC converters in
high temperature conditions for both consumer and
automotive applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
MECHANICAL DATA
VRRM
trr
100 V, 150 V, 200 V
25 ns
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
VF at IF
0.90 V
TJ max.
175 °C
Package
SMA (DO-214AC)
Single
Circuit configurations
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH1B
EHB
100
ESH1C
EHC
150
ESH1D
EHD
200
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
V
V
V
A
70
105
140
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 150 °C
100
150
200
IF(AV)
1.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC® method)
IFSM
50
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
°C
Revision: 08-Apr-2020
Document Number: 88890
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESH1B, ESH1C, ESH1D
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
0.87
0.90
1.0
25
UNIT
(1)
IF = 0.7 A
IF = 1 A
VF
Maximum instantaneous forward voltage
V
VF
IR
TA = 25 °C
Maximum DC reverse current at rated DC
blocking voltage
μA
TA = 125 °C
Maximum reverse current
VR = 20 V, TJ = 150 °C
IR
trr
50
μA
ns
Maximum reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
25
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
25
IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
Typical reverse recovery time
trr
ns
35
10
IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
Typical stored charge
Qrr
CJ
nC
pF
15
Typical junction capacitance
4.0 V, 1 MHz
25
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH1B
ESH1C
85
ESH1D
UNIT
(1)
RθJA
Typical thermal resistance
°C/W
(1)
RθJL
30
Note
(1)
Units mounted on PCB with 5.0 mm x 5.0 mm (0.013 mm thick) land areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ESH1D-E3/61T
0.064
61T
5AT
H
1800
7500
1800
7500
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
ESH1D-E3/5AT
0.064
ESH1DHE3_A/H (1)
ESH1DHE3_A/I (1)
ESH1D-M3/61T
ESH1D-M3/5AT
ESH1DHM3_A/H (1)
ESH1DHM3_A/I (1)
0.064
0.064
I
0.064
61T
5AT
H
0.064
0.064
0.064
I
Note
(1)
AEC-Q101 qualified
Revision: 08-Apr-2020
Document Number: 88890
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESH1B, ESH1C, ESH1D
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10000
1000
100
1.2
TJ = 175 °C
TJ = 150 °C
10
1
1.0
0.8
0.6
0.4
0.2
0
TJ = 125 °C
TJ = 100 °C
0.1
TL Measured
at the Cathode Band Terminal
TJ = 25 °C
TJ = -40 °C
0.01
0.001
10
20
40
60
80
100
95
105
115
125
135
145
155
165
175
Percent of Rated Peak Reverse Voltage (%)
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Instantaneous Forward Characteristics
50
100
40
30
20
10
0
10
1
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
10
10000
1000
100
100
10
1
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
0.01
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 08-Apr-2020
Document Number: 88890
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ESH1B, ESH1C, ESH1D
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 08-Apr-2020
Document Number: 88890
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
Document Number: 91000
1
相关型号：
ESH1PB-E3/84A
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
VISHAY
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