ESH1PA [VISHAY]
High Current Density Surface Mount Ultrafast Rectifiers; 高电流密度表面贴装超快整流器
| 型号： | ESH1PA |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface Mount Ultrafast Rectifiers |
| 文件： | 总2页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESH1PA thru ESH1PD
Vishay Semiconductors
New Product
formerly General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Reverse Voltage 50 to 200 V
Cas Style SMP
Forward Current 1.0 A
Reverse Recovery Time 25ns
Cathode band
Features
• Very low profile - typical height of 1.0mm
• For surface mount application
• Glass passivated chip junction
0.086 (2.18)
0.074 (1.88)
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High operation temperature up to 175°C
• Built-in strain relief, ideal for automated placement
• High temperature soldering guaranteed:
260°C/10 seconds at terminals
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
• Meets MSL Level 1 per J-STD-020C
Mechanical Data
Dimensions in inches
and (millimeters)
Case: SMP
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024g
Epoxy meets UL 94V-0 flammability rating
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Mounting Pad Layout
0.030
(0.762)
0.012 (0.30) REF
0.105
(2.67)
0.025
(0.635)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.050
(1.27)
0.100
(2.54)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
ESH1PA ESH1PB ESH1PC ESH1PD
Unit
Device marking code
Maximum reverse voltage
Maximum average forward rectified current Fig.1
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
PA
50
PB
100
PC
150
PD
200
VRM
IF(AV)
V
A
1.0
50
IFSM
A
RθJA
RθJL
RθJC
105
15
Typical thermal resistance (1)
°C/W
°C
20
Operating junction and Storage temperature range
TJ, TSTG
–55 to +175
Electrical Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
0.86
0.90
Unit
Maximum instantaneous forward voltage(2) at IF=0.7A, TJ=25°C
VF
V
at IF=1A, TJ=25°C
Maximum reverse current
at rated VRM(2)
TJ = 25°C
TJ =125°C
1.0
25
IR
µA
Maximum reverse current at VR = 20V, TJ =150°C
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A
IR
trr
50
25
µA
ns
Typical reverse recovery time at
TJ=25°C
25
35
trr
ns
at IF = 1.0A, VR = 30V di/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Typical reverse recovery time at
TJ=25°C
10
15
25
Qrr
CJ
nC
pF
at IF = 1.0A, VR = 30V di/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Typical junction capacitance at 4.0V, 1MHz
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the
terminal of cathode band. RθJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88895
23-Sep-04
www.vishay.com
1
ESH1PA thru ESH1PD
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
1.2
50
40
30
1.0
0.8
0.6
20
10
0.4
TL measured
at the cathode band terminal
0.2
0
0
1
10
100
95
105 115
125
135 145 155 165 175
Lead Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse Leakage
Characteristics
100
10
1000
100
TJ = 175°C
TJ = 175°C
TJ = 150°C
TJ = 125°C
10
1
TJ = 150°C
1
TJ = 25°C
0.1
TJ = 25°C
0.1
TJ = 125°C
0.8 1.0
0.01
0.01
0.2
0.4
0.6
1.2
1.4
1.6
10
20
30
40 50
60
70
80
90
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient Thermal
Impedance
Fig. 5 – Typical Junction Capacitance
1000
100
1000
100
10
10
1
1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88895
23-Sep-04
相关型号：
ESH1PB-E3/84A
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
VISHAY
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