ES3B [VISHAY]
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER; 表面贴装超快高效塑封整流
| 型号： | ES3B |
| 厂家： | 
VISHAY |
| 描述： | SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3A THRU ES3D
SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 3.0 Amperes
DO-214AB
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ For surface mount applications
♦ Low profile package
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
♦ Built-in strain relief
♦ Ideal for automated placement
♦ Easy pick and place
♦ Superfast recovery time for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:
250°C/10 seconds at terminals
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
MAX.
0.320 (8.13)
0.305 (7.75)
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
ES3A
EA
50
ES3B
EB
ES3C
EC
ES3D
ED
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
70
150
105
150
200
140
200
Volts
Volts
Volts
Amps
35
Maximum DC blocking voltage
50
100
Maximum average forward rectified current at TL=100°C
I(AV)
3.0
100.0
0.90
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at TL=100°C
IFSM
Amps
Maximum instantaneous forward voltage at 3.0A
VF
IR
trr
Volts
µA
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
10.0
500.0
Maximum reverse recovery time (NOTE 1)
20.0
ns
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ=100°C
30.0
50.0
trr
ns
Maximum stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
15.0
35.0
Qrr
CJ
nC
pF
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
45.0
RΘJA
RΘJL
47.0
12.0
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at: VR=30V, di/dt=50A/µs, IF=3.0A, and Irr=10% IR
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas
4/98
RATING AND CHARACTERISTIC CURVES ES3A THRU ES3D
FIG. 1 - MAXIMUM FORWARD CURRENT
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
DERATING CURVE
3.0
2.0
1.0
RESISTIVE OR INDUCTIVE LOAD
150
125
100
75
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at T =100°C
L
50
25
0
P.C.B. MOUNTED on
0.31 x 0.31” (8.0 x 8.0mm) COPPER PADS
0
1
10
100
80
90
100 110 120 130 140 150
LEAD TEMPERATURE, °C
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
10
1,000
100
10
T =25°C
J
T =100°C
J
PULSE WIDTH=300µs
1% DUTY CYCLE
1
T =75°C
J
1
0.1
T =25°C
J
0.1
0.01
0.4
0.6 0.8 1.0
1.2
1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
105
T =25°C
J
f=1.0 MH
Z
Vsig=50mVp-p
90
75
60
45
30
15
0
1
100
0.1
REVERSE VOLTAGE, VOLTS
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