DG2016_08 [VISHAY]

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches; 高带宽,低电压,双路SPDT模拟开关
DG2016_08
型号: DG2016_08
厂家: VISHAY    VISHAY
描述:

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
高带宽,低电压,双路SPDT模拟开关

开关 光电二极管
文件: 总7页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DG2016/DG2026  
Vishay Siliconix  
High-Bandwidth, Low Voltage, Dual SPDT Analog Switches  
DESCRIPTION  
FEATURES  
The DG2016/DG2026 are monolithic CMOS dual  
single-pole/double-throw (SPDT) analog switchs. They are  
specifically designed for low-voltage, high bandwidth  
applications.  
Single Supply (1.8 V to 5.5 V)  
Low On-Resistance - rON: 2.4 Ω  
Crosstalk and Off Isolation: - 81 dB at 1 MHz  
MSOP-10 Package  
RoHS  
COMPLIANT  
The DG2016/DG2026’s on-resistance (3 Ω at 2.7 V),  
matching and flatness are guaranteed over the entire analog  
voltage range. Wide dynamic performance is achieved with  
better than - 80 dB for both cross-talk and off-isolation at  
1 MHz.  
BENEFITS  
Reduced Power Consumption  
High Accuracy  
Both SPDT’s operate with independent control logic,  
conduct equally well in both directions and block signals up  
to the power supply level when off. Break-before-make is  
guaranteed.  
Reduce Board Space  
Low-Voltage Logic Compatible  
High Bandwidth  
With fast switching speeds, low on-resistance, high  
bandwidth, and low charge injection, the DG2016/DG2026  
are ideally suited for audio and video switching with high  
linearity.  
APPLICATIONS  
Cellular Phones  
Speaker Headset Switching  
Audio and Video Signal Routing  
PCMCIA Cards  
Built on Vishay Siliconix’s low voltage CMOS technology, the  
DG2016/DG2026 contain an epitaxial layer which prevents  
latch-up.  
Low-Voltage Data Acquisition  
ATE  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG2016DQ – MSOP-10  
IN1  
NO1  
GND  
NO2  
IN2  
COM1  
NC1  
1
2
3
4
5
10  
9
TRUTH TABLE  
Logic  
NC1 and NC2  
NO1 and NO2  
V+  
8
0
1
ON  
OFF  
ON  
OFF  
NC2  
7
COM2  
6
ORDERING INFORMATION  
Top View  
Temp Range  
Package  
Part Number  
DG2026DQ – MSOP-10  
DG2016DQ-T1-E3  
DG2026DQ-T1-E3  
- 40 to 85 °C  
MSOP-10  
IN1  
NC1  
GND  
NC2  
IN2  
COM1  
NO1  
V+  
1
2
3
4
5
10  
9
8
NO2  
COM2  
7
6
Top View  
Document Number: 72030  
S-71009-Rev. C, 14-May-07  
www.vishay.com  
1
DG2016/DG2026  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
- 0.3 to + 6  
- 0.3 to (V+ + 0.3)  
50  
Unit  
Reference V+ to GND  
IN, COM, NC, NOa  
V
Continuous Current (Any terminal)  
Peak Current (Pulsed at 1 ms, 10 % duty cycle)  
Storage Temperature (D Suffix)  
mA  
200  
- 65 to 150  
320  
°C  
Power Dissipation (Packages)b  
MSOP-10c  
mW  
Notes:  
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC Board.  
c. Derate 4.0 mW/°C above 70 °C.  
SPECIFICATIONS (V+ = 3 V)  
Limits  
Test Conditions  
- 40 to 85 °C  
Otherwise Unless Specified  
V+ = 3 V, 10 %, VIN = 0.4 or 2.0 Ve  
Parameter  
Symbol  
Tempa  
Minb  
Typc  
Maxb  
Unit  
Analog Switch  
VNO, VNC  
VCOM  
Analog Signal Ranged  
On-Resistance  
Full  
0
V+  
V
Room  
Full  
3.0  
4.8  
5.3  
rON  
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA  
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA  
Ω
rON  
Flatness  
rON Flatness  
Room  
1.6  
INO(off)  
INC(off)  
Room  
Full  
- 1  
1
- 10  
10  
Switch Off  
V+ = 3.3 V  
Leakage Currentf  
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V  
Room  
Full  
- 1  
- 10  
1
10  
ICOM(off)  
ICOM(on)  
nA  
Channel-On  
Room  
Full  
- 1  
- 10  
1
10  
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V  
Leakage Currentf  
Digital Control  
Input High Voltaged  
Input Low Voltage  
Input Capacitance  
Input Current  
VINH  
VINL  
Full  
Full  
Full  
Full  
1.6  
1
V
0.4  
1
Cin  
5
pF  
µA  
IINL or IINH  
VIN = 0 or V+  
Dynamic Characteristics  
Room  
Full  
28  
13  
53  
59  
tON  
Turn-On Time  
Turn-Off Time  
VNO or VNC = 2.0 V, RL = 50 Ω, CL = 35 pF  
Room  
Full  
38  
38  
ns  
tOFF  
td  
Break-Before-Make Time  
Charge Injectiond  
Off-Isolationd  
Full  
1
QINJ  
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω  
RL = 50 Ω, CL = 5 pF, f = 1 MHz  
Room  
Room  
Room  
Room  
Room  
Room  
Room  
38  
- 78  
- 82  
15  
pC  
dB  
OIRR  
XTALK  
Crosstalkd  
CNO(off)  
CNC(off)  
CNO(on)  
CNC(on)  
NO, NC Off Capacitanced  
15  
VIN = 0 or V+, f = 1 MHz  
pF  
µA  
49  
Channel-On Capacitanced  
45  
Power Supply  
VIN = 0 or V+  
Power Supply Current  
I+  
Full  
0.01  
1.0  
www.vishay.com  
2
Document Number: 72030  
S-71009-Rev. C, 14-May-07  
DG2016/DG2026  
Vishay Siliconix  
SPECIFICATIONS (V+ = 5 V)  
Limits  
Test Conditions  
- 40 to 85 °C  
Otherwise Unless Specified  
V+ = 5 V, 10 %, VIN = 0.8 or 2.4 Ve  
Parameter  
Symbol  
Tempa  
Minb  
Typc  
Maxb  
Unit  
Analog Switch  
VNO, VNC  
VCOM  
Analog Signal Ranged  
On-Resistance  
Full  
0
V+  
V
Room  
Full  
2.4  
4.0  
4.3  
rON  
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA  
Ω
rON  
Flatness  
rON Flatness  
V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA  
Room  
1.2  
INO(off)  
INC(off)  
Room  
Full  
- 1  
1
- 10  
10  
V+ = 5.5 V  
Switch Off  
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V  
Leakage Current  
Room  
Full  
- 1  
- 10  
1
10  
nA  
ICOM(off)  
ICOM(on)  
Channel-On  
Leakage Current  
Room  
Full  
- 1  
- 10  
1
10  
V+ = 5.5 V, VNO, VNC = VCOM =1 V/4.5 V  
Digital Control  
Input High Voltaged  
Input Low Voltage  
Input Capacitance  
Input Current  
VINH  
VINL  
Full  
Full  
Full  
Full  
2.0  
1
V
0.8  
1
Cin  
5
pF  
µA  
IINL or IINH  
VIN = 0 or V+  
Dynamic Characteristics  
Room  
Full  
23  
8
48  
52  
tON  
Turn-On Time  
Turn-Off Time  
VNO or VNC = 3 V, RL = 50 Ω, CL = 35 pF  
Room  
Full  
33  
35  
ns  
tOFF  
td  
Break-Before-Make Time  
Charge Injectiond  
Off-Isolationd  
Full  
1
QINJ  
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω  
RL = 50 Ω, CL = 5 pF, f = 1 MHz  
Room  
Room  
Room  
Room  
Room  
Room  
Room  
79  
- 81  
- 82  
14  
pC  
dB  
OIRR  
XTALK  
Crosstalkd  
CNO(off)  
CNC(off)  
CNO(on)  
CNC(on  
Source-Off Capacitanced  
Channel-On Capacitanced  
14  
VIN = 0 or V+, f = 1 MHz  
pF  
48  
44  
Power Supply  
Power Supply Range  
Power Supply Current  
V+  
I+  
1.8  
5.5  
1.0  
V
VIN = 0 or V+  
Full  
0.01  
µA  
Notes:  
a. Room = 25 °C, Full = as determined by the operating suffix.  
b. Typical values are for design aid only, not guaranteed nor subject to production testing.  
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
d. Guarantee by design, nor subjected to production test.  
e. VIN = input voltage to perform proper function.  
f. Guaranteed by 5 V leakage testing, not production tested.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 72030  
S-71009-Rev. C, 14-May-07  
www.vishay.com  
3
DG2016/DG2026  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
5
4
3
2
1
0
8
T = 25 °C  
= 10 mA  
7
6
5
4
3
2
1
0
I
S
V+ = 3 V  
85 °C  
25 °C  
- 40 °C  
V+ = 3.0 V  
V+ = 5.0 V  
V+ = 5 V  
85 °C  
25 °C  
- 40 °C  
0
1
2
3
4
5
0
1
2
3
4
5
V
COM  
- Analog Voltage (V)  
V
COM  
- Analog Voltage (V)  
rON vs. VCOM and Supply Voltage  
rON vs. Analog Voltage and Temperature  
10 mA  
10000  
1000  
V+ = 5 V  
1 mA  
100 µA  
10 µA  
100  
10  
V+ = 5 V  
IN  
V
= 0 V  
1 µA  
V+ = 3 V  
= 0 V  
V
IN  
100 nA  
10 nA  
1
10  
100  
1 K  
10 K  
100 K  
1 M  
10 M  
- 60 - 40 - 20  
0
20  
40  
60  
80  
100  
Input Switching Frequency (Hz)  
Temperature (°C)  
Supply Current vs. Temperature  
Supply Current vs. Input Switching Frequency  
100  
75  
10000  
1000  
V+ = 5 V  
V+ = 5 V  
I
, I  
NO(off) NC(off)  
50  
I
25  
COM(on)  
I
COM(off)  
I
I
COM(on)  
COM(off)  
100  
10  
0
I
, I  
NO(off) NC(off)  
- 25  
- 50  
- 75  
- 100  
1
- 60 - 40 - 20  
0
20  
40  
60  
80  
100  
0
1
2
3
4
5
V
, V , V  
- Analog Voltage (V)  
Temperature (°C)  
Leakage Current vs. Temperature  
COM NO NC  
Leakage vs. Analog Voltage  
www.vishay.com  
4
Document Number: 72030  
S-71009-Rev. C, 14-May-07  
DG2016/DG2026  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
60  
10  
- 10  
- 30  
R
L
= 50 Ω  
50  
40  
30  
20  
10  
0
LOSS  
t
V+ = 3 V  
ON  
X
TA L K  
- 50  
- 70  
- 90  
t
V+ = 5 V  
ON  
OIRR  
t
V+ = 3 V  
OFF  
V+ = 5 V  
= 50 Ω  
R
L
t
V+ = 5 V  
60  
OFF  
- 60 - 40 - 20  
0
20  
Temperature (°C)  
Switching Time vs. Temperature  
40  
80  
100  
100 K  
1 M  
10 M  
Frequency (Hz)  
100 M  
1 G  
Insertion Loss, Off-Isolation  
Crosstalk vs. Frequency  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
80  
60  
40  
20  
V+ = 5 V  
0
- 20  
- 40  
- 60  
- 80  
V+ = 3 V  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
V+ - Supply Voltage (V)  
Switching Threshold vs. Supply Voltage  
V
- Analog Voltage (V)  
COM  
Charge Injection vs. Analog Voltage  
TEST CIRCUITS  
V+  
V+  
V
INH  
t < 5 ns  
t < 5 ns  
f
Logic  
Input  
r
50 %  
V
INL  
Switch Output  
NO or NC  
COM  
Switch  
Input  
V
OUT  
0.9 x V  
OUT  
IN  
GND  
Switch  
Output  
R
50 Ω  
C
L
35 pF  
L
0 V  
Logic  
Input  
t
t
OFF  
ON  
0 V  
Logic "1" = Switch On  
Logic input waveforms inverted for switches that have  
the opposite logic sense.  
C
L
(includes fixture and stray capacitance)  
R
L
+ R  
V
= V  
COM  
OUT  
R
L
ON  
Figure 1. Switching Time  
Document Number: 72030  
S-71009-Rev. C, 14-May-07  
www.vishay.com  
5
DG2016/DG2026  
Vishay Siliconix  
TEST CIRCUITS  
V+  
Logic  
Input  
V
V
t < 5 ns  
f
INH  
r
t < 5 ns  
V+  
COM  
NO  
NC  
INL  
V
O
V
NO  
V
NC  
R
50 Ω  
C
L
35 pF  
L
V
NC  
= V  
NO  
V
IN  
90 %  
O
GND  
Switch  
Output  
0 V  
t
D
t
D
C
L
(includes fixture and stray capacitance)  
Figure 2. Break-Before-Make Interval  
V+  
V+  
ΔV  
OUT  
R
gen  
V
OUT  
NC or NO  
IN  
COM  
V
OUT  
+
IN  
V
gen  
C
= 1 nF  
L
On  
On  
Off  
Q = ΔV  
V
IN  
= 0 - V+  
GND  
x C  
OUT  
L
IN depends on switch configuration: input polarity  
determined by sense of switch.  
Figure 3. Charge Injection  
V+  
V+  
V+  
10 nF  
10 nF  
V+  
NC or NO  
COM  
0 V, 2.4 V  
IN  
Meter  
COM  
COM  
IN  
HP4192A  
Impedance  
Analyzer  
0 V, 2.4 V  
or Equivalent  
R
L
NC or NO  
GND  
GND  
f = 1 MHz  
Analyzer  
V
COM  
Off Isolation = 20 log  
V
NO/ NC  
Figure 5. Channel Off/On Capacitance  
Figure 4. Off-Isolation  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?72030.  
www.vishay.com  
6
Document Number: 72030  
S-71009-Rev. C, 14-May-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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