DG2017DN [VISHAY]
Low-Voltage, Low ON, Dual DPDT Analog Switch; 低电压，低导通，双DPDT模拟开关
| 型号： | DG2017DN |
| 厂家： | 
VISHAY |
| 描述： | Low-Voltage, Low ON, Dual DPDT Analog Switch |
| 文件： | 总7页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG2017
Vishay Siliconix
New Product
Low-Voltage, Low rON, Dual DPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (2.0 V to 5.5 V)
D Low On-Resistance @ 2.7 V - rON:
SW1, SW2 - 3.2 W
D Space Saving Solution
D Cellular Phones
D Low Power Consumption
D Integrated Speaker Switching
D Audio and Video Signal Routing
D PCMCIA Cards
D Guaranteed Low Voltage Operation
D Low Voltage Logic Compatible
SW3, SW4 - 0.64 W
D Fast Switching:
t
ON = 46 ns
D Battery Operated Systems
tOFF = 21 ns
D QFN-16 (4x4 mm) Package
DESCRIPTION
The DG2017 is a dual DPDT (double-pole/double-throw),
optimized for high performance analog switching, and
specifically designed to benefit portable audio applications.
the use of multiple single SPDT devices as well as providing
the advantage of on-resistance flatness and matching that
single SPDT devices cannot offer.
One pair of double-throw switches is sub 1 W for low
impedance speaker performance while the second pair of
double-throw switches is suitable for microphone applications.
The DG2017 provides low charge injection (2 pC), fast
switching time (tON and tOFF less than 100 ns), excellent
Off-Isolation and Crosstalk (–70 dB @ 100 kHz). During
operation, continuous current through any or all switches is
rated at "200 mA, ideal for portable audio applications.
With the DPDT configuration, the DG2017 provides the
flexibility for stereo-single-end or differential BTL output
structures with a fully integrated differential microphone
switching solution.
Built on Vishay Siliconix’s low voltage CMOS process, the
DG2017 contains an epitaxial layer that prevents latchup.
Break-before-make is guaranteed. When on, each switch
conducts equally well in both directions, and block up to the
power supply level when off.
The DG2017 is an integrated monolithic device in a QFN-16
(4 x 4 mm) package that provides a space saving solution over
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
QFN-16 (4 X 4)
COM1 NO1
16 15
V+
14
NC4
13
TRUTH TABLE
Logic
NC1, 2, 3 and 4 NO1, 2, 3 and 4
NC1
IN1, IN2
NO2
COM4
NO4
1
2
3
4
12
11
10
9
0
1
ON
OFF
ON
OFF
ORDERING INFORMATION
IN3, IN4
NC3
Temp Range
Package
Part Number
COM2
-40 to 85°C
16-Pin QFN (4 x 4 mm)
DG2017DN
5
6
7
8
NC2 GND NO3 COM3
Top View
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
1
DG2017
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
b
Reference to GND
Power Dissipation (Packages)
QFN-16 (4x4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
a
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Notes:
Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "200 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA
(Pulsed at 1 ms, 10% duty cycle)
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/_C above 70_C
d. Manual soldering with iron is not recommended for leadless components.
The QFN is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufactur-
ing. A solder fillet at the exposed copper lip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
d
Package Solder Reflow Conditions
16-Pin QFN (4 x 4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
SPECIFICATIONS (V+ = 3 V)
Limits
Test Conditions
-40 to 85_C
Otherwise Unless Specified
Minb
Typc
Maxb
Unit
e
Parameter
Analog Switch
Symbol
Tempa
V+ = 3 V, "10%, V = 0.4 or 1.6 V
IN
V
, V
,
NO NC
d
Analog Signal Range
Full
0
V+
V
V
r
COM
DC Characteristics
Room
Full
3.7
4.3
ON
V+ = 2.7 V, V
= 0.2 V/1.5 V, I , I = 10 mA
3.2
0.67
1.4
COM
NO NC
(SW SW )
1,
2
On-Resistance
r
Room
Full
1.1
1.2
ON
V+ = 2.7 V, V
V+ = 2.7 V, V
= 0.2 V/1.5 V, I , I = 100 mA
NO NC
COM
(SW SW4)
3,
r
Room
Full
ON
= 0.2 V/1.5 V, I , I = 10 mA
2.0
0.3
0.3
0.3
COM
NO NC
(SW SW )
1,
2
d
r
r
Flatness
W
ON
ON
r
Room
Full
ON
V+ = 2.7 V, V
V+ = 2.7 V, V
= 0.2 V/1.5 V, I , I = 100 mA
0.12
COM
NO NC
(SW3 SW )
,
4
Dr
Room
Full
ON
= 0.2 V/1.5 V, I , I = 10 mA
COM
NO NC
(SW SW )
1,
2
d
Match
Dr
Room
Full
ON
V+ = 2.7 V, V
= 0.2 V/1.5 V, I , I = 100 mA
NO NC
COM
(SW SW )
3,
4
I
I
,
Room
Full
-0.5
5.0
0.5
5.0
NO(off)
NC(off)
V+ = 3.3 V, V , V = 0.3 V/3.0 V
NO NC
Switch Off Leakage Current
V
COM
= 0.3 V/3.0 V
Room
Full
-0.5
5.0
0.5
5.0
I
nA
COM(off)
Room
Full
-0.5
5.0
0.5
5.0
Channel-On Leakage Current
I
V+ = 3.3 V, V =V
V
=0.3 V/3.0 V
COM(on)
NO
NC COM
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
V
Full
Full
Full
Full
1.6
-1
INH
V
V
0.4
1
INL
C
6
pF
in
IINL or IINH
V
IN
= 0 or V+
mA
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
2
DG2017
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Limits
Otherwise Unless Specified
-40 to 85_C
Minb
Typc
Maxb
Unit
e
Parameter
Symbol
IN
Tempa
V+ = 3 V, "10%, V = 0.4 or 1.6 V
Dynamic Characteristics
t
Room
Full
62
85
91
ON,
(SW SW )
1,
2
Turn-On Time
t
Room
Full
74
79
ON,
46
12
21
45
26
2
(SW SW )
3,
4
t
Room
Full
35
36
ON,
(SW SW )
1,
2
V
NO
or V = 2.0 V, R = 300 W, C = 35 pF
NC
L
L
Turn-Off Time
ns
(Figure 1,2)
t
Room
Full
46
48
ON,
(SW SW )
3,
4
t
d,
Full
Full
5
5
(SW SW )
1,
2
Break-Before-Make Time
t
d,
(SW SW )
3,
4
Q
INJ,
(SW SW )
1,
2
C = 1 nF, V
= 0 V, R = 0 W
GEN
L
GEN
d
Charge Injection
Room
pC
dB
(Figure 3)
Q
INJ,
1
(SW SW )
3,
4
OIRR,
-68
-51
-69
-51
12
43
86
283
(SW SW )
1,
2
d
Off-Isolation
OIRR,
(SW SW )
3,
4
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
Room
(Figure 4)
X
TALK
,
(SW SW )
1,
2
d
Crosstalk
X
TALK
,
(SW SW )
3,
4
C
OFF,
(SW SW )
1,
2
d
N , N Off Capacitance
O
C
C
OFF,,
(SW SW )
3,
4
V
IN
= 0 or V+, f = 1 MHz
Room
pF
C
ON,
(SW SW )
1,
2
d
Channel-On Capacitance
C
ON,
(SW SW )
3,
4
Power Supply
Power Supply Range
Power Supply Current
V+
I+
2.0
5.5
1.0
V
V
OE
= 0 or V+
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Guaranteed by 5-V leakage testing, not production tested.
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
3
DG2017
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
and Single Supply Voltage
r
vs. V and Single Supply Voltage
COM
ON
COM
ON
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1.600
1.400
1.200
1.000
0.800
0.600
0.400
0.200
0.000
T = 25_C
I =10 mA
S
T = 25_C
SW & SW
1
2
SW & SW
3
4
V+ = 2.3 V
V+ = 2.3 V, I = 50 mA
V+ = 2.7 V
V+ = 3.3 V
S
V+ = 2.7 V, I = 100 mA
S
V+ = 3.3 V, I = 100 mA
S
V+ = 5.0 V, I = 100 mA
S
V+ = 5.0 V
0
1
2
3
4
5
0
1
2
3
4
5
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
r
vs. Analog Voltage and Temperature
r
vs. Analog Voltage and Temperature
ON
ON
6.00
5.00
4.00
3.00
2.00
1.00
0.00
1.400
1.200
1.000
0.800
0.600
0.400
0.200
0.000
V+ = 2.7 V
V+ = 5.0 V
V+ = 2.7 V
85_ C
25_ C
85_ C
85_ C
25_ C
25_ C
V+ = 5.0 V
85_ C
-40_ C
-40_ C
-40_ C
25_ C
-40_ C
SW and SW
3
4
SW and SW
1
2
I =100 mA
S
I =10 mA
S
0
1
2
3
4
5
0
1
2
3
4
5
V
COM
- Analog Voltage (V)
V
COM
- Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10000
1000
100
10 mA
1 mA
V+ = 3 V
100 mA
10 mA
1 mA
100 nA
10 nA
V+ = 5.0 V
V
IN
= 0 V
V+ = 3.0 V
V
IN
= 0 V
1 nA
10
100 nA
10
100
1 K
10 K
100 K
1 M
10 M
-60
-40
-20
0
20
40
60
80
100
Temperature (_C)
Input Switching Frequency (Hz)
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
4
DG2017
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
1000
800
600
400
200
0
V+ = 5.0 V
I
, II
NO(off) NC(off)
I
COM(on)
100
10
I
COM(off)
I
COM(on)
-200
-400
-600
-800
I
, I
NO(off) NC(off)
V+ = 3 V
2.5
I
COM(off)
1
-60
-40
-20
0
20
40
60
80
100
0.0
0.5
1.0
, V , V
1.5
2.0
3.0
Temperature (_C)
V
- Analog Voltage (V)
COM NO NC
Switching Time vs. Temperature
Switching Time vs. Temperature
160
140
120
100
80
100
80
60
40
20
0
t
V+ = 2 V
ON
t
V+ = 2 V
ON
t
V+ = 3 V
ON
t
V+ = 3 V
ON
t
V+ = 2 V
60
OFF
t
V+ = 5 V
ON
t
V+ = 5 V
V+ = 2 V
ON
40
t
V+ = 3 V
OFF
t
OFF
t
V+ = 5 V
80
20
OFF
t
V+ = 3 V
20
OFF
t
V+ = 5 V
OFF
0
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
40
60
100
Temperature (_C)
Temperature (_C)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
10
0
10
0
Loss
Loss
-10
-10
X
TALK
-20
-30
X
TALK
-20
-30
OIRR
OIRR
-40
-50
-40
-50
DG2017
-60
-70
DG2017
-60
-70
SW and SW
3
4
SW and SW
1
2
V+ =3 V
V+ = 3 V
R
L
= 50 W
R
L
= 50 W
-80
-90
-80
-90
100 K
1 M
10 M
100 M
1 G
100 K
1 M
10 M
Frequency (Hz)
100 M
1 G
Frequency (Hz)
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
5
DG2017
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
60
40
3.0
V+ = 3 V
2.5
2.0
1.5
1.0
0.5
0.0
20
SW and SW
1
2
0
-20
-40
-60
SW and SW
3
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V+ - Supply Voltage (V)
V
COM
- Analog Voltage (V)
TEST CIRCUITS
V+
V
V
INH
t t 5 ns
f
r
Logic
Input
50%
t t 5 ns
V+
INL
Switch Output
NO or NC
COM
Switch
Input
V
OUT
0.9 x V
OUT
IN
Switch
Output
R
L
C
L
300 W
35 pF
0 V
Logic
Input
GND
t
t
OFF
ON
0 V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
ǒ
Ǔ
V
+ V
COM
OUT
R
) R
ON
L
Figure 1.
Switching Time
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
6
DG2017
Vishay Siliconix
New Product
TEST CIRCUITS
V+
V+
Logic
Input
V
V
t <5 ns
r
t <5 ns
f
INH
NO
COM
INL
V
O
V
NO
NC
V
NC
R
300 W
C
L
35 pF
L
V
NC
= V
NO
V
IN
90%
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
Figure 2.
Break-Before-Make Interval
V+
V+
DV
OUT
R
gen
V
OUT
COM
IN
NC or NO
V
OUT
+
IN
V
gen
C
= 1 nF
L
On
On
Off
V
IN
= 0 - V+
GND
Q = DV
x C
L
OUT
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3.
Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
COM
0V, 2.4 V
IN
Meter
COM
COM
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
R
L
or Equivalent
NC or NO
GND
GND
f = 1 MHz
Analyzer
V
COM
Off Isolation + 20 log
V
NOńNC
Figure 4.
Off-Isolation
Figure 5.
Channel Off/On Capacitance
Document Number: 72228
S-31067—Rev. A, 26-May-03
www.vishay.com
7
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