DG2012 [VISHAY]
Low-Voltage Single SPDT Analog Switch; 低电压单SPDT模拟开关
| 型号： | DG2012 |
| 厂家： | 
VISHAY |
| 描述： | Low-Voltage Single SPDT Analog Switch |
| 文件： | 总8页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG2012
Vishay Siliconix
New Product
Low-Voltage Single SPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On-Resistance - rDS(on): 1 W Typ.
D Fast Switching - tON : 17 ns, tOFF: 13 ns
D Low Leakage
D Reduced Power Consumption
D Simple Logic Interface
D High Accuracy
D Cellular Phones
D Communication Systems
D Portable Test Equipment
D Battery Operated Systems
D Sample and Hold Circuits
D Reduce Board Space
D TTL/CMOS Compatible
D 6-Pin SC-70 Package
DESCRIPTION
The DG2012 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed (tON: 17 ns,
The DG2012 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.
tOFF
:
13 ns), low on-resistance (rDS(on): 1 W) and small
physical size (SC70), the DG2012 is ideal for portable and
battery powered applications requiring high performance and
efficient use of board space.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC
NO
SC-70
0
ON
OFF
ON
IN
V+
NO (Source )
1
1
2
3
6
5
4
1
OFF
COM
GND
NC (Source )
2
Top View
Device Marking: E7xx
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85°C
SC70-6
DG2012DL
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
1
DG2012
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
b
Reference to GND
Power Dissipation (Packages)
c
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
6-Pin SO70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
a
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Notes:
Continuous Current (NO, NC and COM Pins) . . . . . . . . . . . . . . . . "100 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA
(Pulsed at 1 ms, 10% duty cycle)
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/_C above 70_C
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
e
Minb
Typc
Maxb
Unit
Tempa
V+ = 2.0 V, "10%, V = 0.4 or 1.6 V
IN
Parameter
Analog Switch
Symbol
V
, V
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
COM
V+ = 1.8 V, V
= 0.2 V/0.9 V
Room
Full
2.7
2.7
5.3
5.3
COM
On-Resistance
d
r
ON
d
I , I = 10 mA
NO NC
r
ON
W
r
ON
Flatness
Room
3
Flatness
Dr
V+ = 1.8 V, V
= 0 to V+, I , I = 10 mA
NO NC
COM
d
r
ON
Match
Room
Room
0.25
ON
I
I
-0.5
-5.0
0.5
5.0
NO(off),
d
Full
NC(off)
V+ = 2.2 V
f
Switch Off Leakage Current
V
V
= 0.5 V/1.5 V, V
= 1.5 V/0.5 V
= 0.5 V/1.5 V
NO, NC
COM
Room
-0.5
-5.0
0.5
5.0
I
nA
COM(off)
d
Full
Room
-0.5
-5.0
0.5
5.0
f
Channel-On Leakage Current
I
V+ = 2.2 V, V
V
= V
COM(on)
NO, NC
COM
d
Full
Digital Control
Input High Voltage
Input Low Voltage
V
Full
Full
Full
Full
1.6
-1
INH
V
V
0.4
1
INL
d
Input Capacitance
C
3
pF
in
f
Input Current
IINL or IINH
V
= 0 or V+
mA
IN
Dynamic Characteristics
Room
Full
43
23
63
65
d
Turn-On Time
t
ON
d
V
or V = 1.5 V, R = 300 W, C = 35 pF
NO
NC
L
L
Room
45
46
ns
d
Turn-Off Time
t
Figures 1 and 2
OFF
d
Full
d
Break-Before-Make Time
t
Room
Room
Room
Room
2
d
d
Charge Injection
Q
INJ
C = 1 nF, V
= 0 V, R = 0 W, Figure 3
GEN
7
pC
dB
L
GEN
d
Off-Isolation
OIRR
-63
-64
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
C
NO(off),
d
NO, NC Off Capacitance
Room
Room
22
58
NC(off)
V
= 0 or V+, f = 1 MHz
pF
IN
d
Channel-On Capacitance
C
ON
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
2
DG2012
Vishay Siliconix
New Product
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Limits
Otherwise Unless Specified
-40 to 85_C
e
Minb
Typc
Maxb
Unit
Tempa
V+ = 3 V, "10%, V = 0.6 or 2.0 V
IN
Parameter
Analog Switch
Symbol
V
, V
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
COM
V+ = 2.7 V, V
= 0.2 V/1.5 V, I
= 10 mA
Room
Full
1.4
1.6
2.1
2.3
COM
NO
On-Resistance
r
ON
I
NC
r
W
ON
r
r
Flatness
Room
Room
0.85
0.25
ON
Flatness
Dr
V+ = 2.7 V, V
= 0 to V+, I , I = 10 mA
NO NC
COM
MatchFlat
ON
ON
I
I
Room
Full
-0.5
-5.0
0.5
5.0
NO(off),
NC(off)
V+ = 3.3 V
f
Switch Off Leakage Current
V
V
= 1 V/3 V, V
= 3 V/1 V
NO, NC
COM
Room
Full
-0.5
-5.0
0.5
5.0
I
nA
COM(off)
Room
Full
-0.5
-5.0
0.5
5.0
f
Channel-On Leakage Current
I
V+ = 3.3 V, V
V
= V
= 1 V/3 V
COM(on)
NO, NC
COM
Digital Control
Input High Voltage
Input Low Voltage
V
Full
Full
Full
Full
2
INH
V
V
0.6
1
INL
d
Input Capacitance
C
3
pF
in
f
Input Current
IINL or IINH
V
= 0 or V+
-1
mA
IN
Dynamic Characteristics
Room
Full
27
17
47
48
Turn-On Time
t
ON
V
or V = 2.0 V, R = 300 W, C = 35 pF
NO
NC
L
L
Room
Full
37
38
ns
Turn-Off Time
t
Figure 1 and 2
OFF
Break-Before-Make Time
t
Room
Room
Room
Room
1
d
d
Charge Injection
Q
INJ
C = 1 nF, V
= 0 V, R = 0 W, Figure 3
GEN
10
pC
dB
L
GEN
d
Off-Isolation
OIRR
-63
-64
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
C
NO(off),
d
NO, NC Off Capacitance
Room
Room
21
57
NC(off)
V
= 0 or V+, f = 1 MHz
pF
IN
d
Channel-On Capacitance
C
ON
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.8
5.5
1.0
V
V
= 0 or V+
0.01
mA
IN
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
3
DG2012
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions
Limits
Otherwise Unless Specified
-40 to 85_C
e
Minb
Typc
Maxb
Unit
Tempa
V+ = 5 V, "10%, V = 0.8 or 2.4 V
IN
Parameter
Analog Switch
Symbol
V
, V
,
NO NC
V
d
Analog Signal Range
Full
0
V+
V
COM
V+ = 4.5 V, V
= 0.5 V/2.5 V
Room
Full
1.0
1.2
1.8
1.9
COM
On-Resistance
d
r
ON
I , I = 10 mA
NO NC
r
ON
W
r
ON
Flatness
Room
Room
0.55
0.25
Flatness
V+ = 4.5 V, V
= 0 to V+, I , I = 10 mA
NO NC
COM
d
r
ON
Match
Dr
ON
I
I
Room
Full
-0.5
-5.0
0.5
5.0
NO(off),
NC(off)
V+ = 5.0 V
Switch Off Leakage Current
V
V
= 0.5 V/4.5 V, V
= 4.5 V/0.5 V
= 0.5 V/4.5 V
NO, NC
COM
Room
Full
-0.5
-5.0
0.5
5.0
I
nA
COM(off)
Room
Full
-0.5
-5.0
0.5
5.0
Channel-On Leakage Current
I
V+ = 5.0 V, V
V
= V
COM(on)
NO, NC
COM
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
V
Full
Full
Full
Full
2.4
-1
INH
V
V
0.8
1
INL
C
3
pF
in
IINL or IINH
V
= 0 or V+
mA
IN
Dynamic Characteristics
Room
Full
17
13
38
39
d
Turn-On Time
t
ON
V
or V = 3 V, R = 300 W, C = 35 pF
NO
NC
L
L
Room
Full
32
33
ns
d
Turn-Off Time
t
Figure 1 and 2
OFF
d
Break-Before-Make Time
t
Room
Room
Room
Room
1
d
d
Charge Injection
Q
INJ
C = 1 nF, V
= 0 V, R = 0 W, Figure 3
GEN
20
pC
dB
L
GEN
d
Off-Isolation
OIRR
-63
-64
R
L
= 50 W, C = 5 pF, f = 1 MHz
L
d
Crosstalk
X
TALK
C
C
NO(off),
d
Source-Off Capacitance
Room
Room
20
56
NC(off)
V
= 0 or V+, f = 1 MHz
pF
IN
d
Channel-On Capacitance
C
ON
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Guaranteed by 5-V leakage testing, not production tested.
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
4
DG2012
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
Supply Voltage
r
vs. Analog Voltage and Temperature
ON
ON
COM
6
5
4
3
2
1
0
6
5
4
3
2
1
0
I
S
= 10 mA
I = 10 mA
S
V+ = 2 V
V+ = 1.8 V
85_C
25_C
V+ = 3 V
V+ = 5 V
V+ = 2 V
V+ = 3 V
85_C
25_C
-40_C
85_C
25_C
-40_C
V+ = 5 V
-40_C
0
1
2
3
4
5
0
1
2
3
4
5
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10 m
10000
1000
V+ = 5 V
= 0 V
V+ = 3 V
1 m
V
IN
100 m
10 m
1 m
100
100 n
10 n
1 n
10
1
100 p
10
100
1 K
10 K
100 K
1 M
10 M
-60
-40
-20
0
20
40
60
80
100
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
250
200
150
100
50
1000
V+ = 5 V
V+ = 5 V
T = 25_C
100
10
I
COM(off)
I
COM(on)
I
/I
NO(off) NC(off)
0
I
COM(on)
-50
I
/I
NO(off) NC(off)
-100
-150
-200
-250
1
I
COM(off)
0.1
-60
-40
-20
0
20
40
60
80
100
0
1
2
3
4
5
Temperature (_C)
V
, V , V
COM NO NC
- Analog Voltage
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
5
DG2012
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
50
10
0
t
V+ = 2 V
ON
45
40
35
30
25
20
15
10
5
LOSS
-10
-20
-30
t
t
V+ = 3 V
ON
-40
V+ = 2 V
V+ = 3 V
OFF
OIRR
-50
t
t
t
OFF
X
TALK
V+ = 5 V
V+ = 5 V
ON
V+ = 5 V
= 50 W
-60
-70
-80
-90
R
OFF
L
0
-60
-40
-20
0
20
40
60
80
100
100 K
1 M
10 M
100 M
1 G
Temperature (_C)
Frequency (Hz)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
20
V+ = 5 V
10
V+ = 3 V
0
V+ = 2 V
-10
-20
-30
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
V+ - Supply Voltage (V)
V
- Analog Voltage (v)
COM
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
6
DG2012
Vishay Siliconix
New Product
TEST CIRCUITS
V+
V
INH
t t 5 ns
f
r
Logic
Input
50%
t t 5 ns
V
V+
INL
Switch Output
NO or NC
COM
Switch
Input
V
OUT
0.9 x V
OUT
IN
Switch
Output
R
L
C
L
300 W
35 pF
0 V
Logic
Input
GND
t
t
OFF
ON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
V
+ V
ǒ
Ǔ
OUT
COM
R
) R
L
ON
FIGURE 1. Switching Time
V+
V
Logic
Input
INH
t <5 ns
t <5 ns
f
r
V+
V
INL
COM
NO
V
O
V
NO
NC
IN
V
NC
R
300 W
C
L
35 pF
L
V
= V
NC
NO
V
90%
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
V+
DV
OUT
R
gen
V
OUT
COM
NC or NO
V
OUT
+
IN
IN
V
gen
V
C = 1 nF
L
On
On
Off
GND
Q = DV
x C
L
OUT
= 0 - V+
IN
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
7
DG2012
New Product
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0V, 2.4 V
IN
COM
V
COM
Off Isolation + 20 log
V
R
L
NOńNC
GND
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
NC or NO
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Document Number: 72176
S-03723—Rev. A, 07-Apr-03
www.vishay.com
8
相关型号：
DG2015DN-E3
IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CQCC16, 4 X 4 MM, QFN-16, Multiplexer or Switch
VISHAY
©2020 ICPDF网 联系我们和版权申明