DG2012DL-T1-E3 [VISHAY]
Low-Voltage Single SPDT Analog Switch; 低电压单SPDT模拟开关
| 型号： | DG2012DL-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Low-Voltage Single SPDT Analog Switch |
| 文件： | 总9页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG2012
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
DESCRIPTION
FEATURES
The DG2012 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed
(tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and
small physical size (SC70), the DG2012 is ideal for portable
and battery powered applications requiring high
performance and efficient use of board space.
•
•
•
•
•
•
Low Voltage Operation (1.8 V to 5.5 V)
Pb-free
Low On-Resistance - rDS(on): 1 Ω Typ.
Fast Switching - tON: 17 ns, tOFF: 13 ns
Low Leakage
Available
RoHS*
COMPLIANT
TTL/CMOS Compatible
6-Pin SC-70 Package
The DG2012 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.
BENEFITS
•
•
•
•
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
Reduce Board Space
APPLICATIONS
•
•
•
•
•
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
NC
ON
NO
SC-70
0
1
OFF
ON
OFF
IN
V+
NO (Source )
1
1
2
3
6
5
4
COM
GND
NC (Source )
2
ORDERING INFORMATION
Top View
Temp Range
Package
Part Number
DG2012DL-T1
DG2012DL-T1-E3
Device Marking: E7xx
- 40 to 85 °C
SC70-6
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
1
DG2012
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
100
Unit
Referenced V+ to GND
IN, COM, NC, NOa
V
Continuous Current (NO, NC and COM Pins)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
mA
300
- 65 to 150
250
°C
Power Dissipation (Packages)b
6-Pin SO70c
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 2.0 V)
Limits
Test Conditions
- 40 to 85 °C
Otherwise Unless Specified
V+ = 2.0 V, 10 %, VIN = 0.4 or 1.6 Ve
Parameter
Symbol
Tempa
Minb
Typc
Maxb
Unit
Analog Switch
VNO, VNC
VCOM
Analog Signal Ranged
Full
0
V+
V
V+ = 1.8 V, VCOM = 0.2 V/0.9 V
INO, INC = 10 mA
Room
Fulld
2.7
2.7
5.3
5.3
rON
On-Resistance
rON
Flatness
Ω
rON Flatnessd
rON Matchd
Room
Room
3
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
ΔrON
0.25
INO(off)
INC(off)
Room
Full
- 0.5
- 5.0
0.5
5.0
V+ = 2.2 V
NO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
Switch Off Leakage Currentf
Channel-On Leakage Currentf
V
Room
Fulld
- 0.5
- 5.0
0.5
5.0
ICOM(off)
ICOM(on)
nA
V
Room
Fulld
- 0.5
- 5.0
0.5
5.0
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Digital Control
VINH
VINL
Input High Voltage
Input Low Voltage
Full
Full
Full
Full
1.6
- 1
0.4
1
Input Capacitanced
Input Currentf
Cin
3
pF
µA
IINL or IINH
VIN = 0 or V+
Dynamic Characteristics
Room
Fulld
43
23
63
65
Turn-On Timed
Turn-Off Timed
tON
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
Room
Fulld
45
46
ns
tOFF
Figures 1 and 2
Break-Before-Make Timed
Charge Injectiond
Off-Isolationd
td
Room
Room
Room
Room
2
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
7
pC
dB
OIRR
XTALK
- 63
- 64
Crosstalkd
CNO(off)
CNC(off)
NO, NC Off Capacitanced
Channel-On Capacitanced
Room
Room
22
58
VIN = 0 or V+, f = 1 MHz
pF
CON
www.vishay.com
2
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
DG2012
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Limits
Test Conditions
- 40 to 85 °C
Otherwise Unless Specified
V+ = 3 V, 10 %, VIN = 0.6 or 2.0 Ve
Parameter
Symbol
Tempa
Minb
Typc
Maxb
Unit
Analog Switch
VNO, VNC
VCOM
Analog Signal Ranged
Full
0
V+
V
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO
INC = 10 mA
Room
Full
1.4
1.6
2.1
2.3
rON
On-Resistance
Ω
rON
Flatness
r
r
ON Flatness
Room
Room
0.85
0.25
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA
ON MatchFlat
ΔrON
INO(off)
INC(off)
Room
Full
- 0.5
- 5.0
0.5
5.0
V+ = 3.3 V
NO, VNC = 1 V/3 V, VCOM = 3 V/1 V
Switch Off Leakage Currentf
Channel-On Leakage Currentf
V
Room
Full
- 0.5
- 5.0
0.5
5.0
nA
V
ICOM(off)
ICOM(on)
Room
Full
- 0.5
- 5.0
0.5
5.0
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Digital Control
VINH
VINL
Input High Voltage
Input Low Voltage
Full
Full
Full
Full
2
0.6
1
Input Capacitanced
Input Currentf
Cin
3
pF
µA
IINL or IINH
VIN = 0 or V+
- 1
Dynamic Characteristics
Room
Full
27
17
47
48
tON
Turn-On Time
Turn-Off Time
VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF
Room
Full
37
38
ns
tOFF
Figures 1 and 2
td
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Room
Room
Room
Room
1
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
10
pC
dB
OIRR
XTALK
- 63
- 64
Crosstalkd
CNO(off)
CNC(off)
NO, NC Off Capacitanced
Room
Room
21
57
VIN = 0 or V+, f = 1 MHz
pF
Channel-On Capacitanced
Power Supply
CON
Power Supply Range
Power Supply Current
V+
I+
1.8
5.5
1.0
V
VIN = 0 or V+
0.01
µA
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
3
DG2012
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Limits
Test Conditions
- 40 to 85 °C
Otherwise Unless Specified
V+ = 5 V, 10 %, VIN = 0.8 or 2.4 Ve
Parameter
Symbol
Tempa
Minb
Typc
Maxb
Unit
Analog Switch
VNO, VNC
VCOM
Analog Signal Ranged
Full
0
V+
V
V+ = 4.5 V, VCOM = 0.5 V/2.5 V
NO, INC = 10 mA
Room
Full
1.0
1.2
1.8
1.9
rON
On-Resistance
I
rON
Flatness
Ω
rON Flatnessd
rON Matchd
Room
Room
0.55
0.25
V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA
ΔrON
INO(off)
INC(off)
Room
Full
- 0.5
- 5.0
0.5
5.0
V+ = 5.0 V
NO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V
Switch Off Leakage Current
Channel-On Leakage Current
V
Room
Full
- 0.5
- 5.0
0.5
5.0
nA
V
ICOM(off)
ICOM(on)
Room
Full
- 0.5
- 5.0
0.5
5.0
V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V
Digital Control
VINH
VINL
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Full
Full
Full
Full
2.4
0.8
1
Cin
3
pF
µA
IINL or IINH
VIN = 0 or V+
- 1
Dynamic Characteristics
Room
Full
17
13
38
39
Turn-On Timed
Turn-Off Timed
tON
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Room
Full
32
33
ns
tOFF
Figures 1 and 2
Break-Before-Make Timed
Charge Injectiond
Off-Isolationd
td
Room
Room
Room
Room
1
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
20
pC
dB
OIRR
XTALK
- 63
- 64
Crosstalkd
CNO(off)
CNC(off)
Source-Off Capacitanced
Channel-On Capacitanced
Room
Room
20
56
VIN = 0 or V+, f = 1 MHz
pF
CON
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
DG2012
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
5
4
3
2
1
0
6
I
S
= 10 mA
I
S
= 10 mA
5
4
3
2
1
0
V+ = 2 V
V+ = 1.8 V
85 °C
25 °C
- 40 °C
V+ = 3 V
V+ = 5 V
V+ = 2 V
V+ = 3 V
85 °C
25 °C
- 40 °C
85 °C
25 °C
V+ = 5 V
- 40 °C
5
0
1
2
3
4
0
1
2
3
4
5
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
rON vs. Analog Voltage and Temperature
rON vs. VCOM and Supply Voltage
10 m
10000
V+ = 5 V
= 0 V
V+ = 3 V
1 m
100 µ
10 µ
1 µ
V
IN
1000
100
100 n
10 n
1 n
10
1
100 p
- 60 - 40 - 20
0
20
Temperature (°C)
Supply Current vs. Temperature
40
60
80
100
10
100
1 K
10 K
100 K
1 M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
250
1000
100
10
V+ = 5 V
T = 25 °C
V+ = 5 V
200
150
100
50
I
COM(off)
I
COM(on)
I
/I
NO(off) NC(off)
0
I
COM(on)
- 50
- 100
- 150
- 200
- 250
I
/I
NO(off) NC(off)
1
I
COM(off)
0.1
0
1
2
, V , V - Analog Voltage
COM NO NC
3
4
5
- 60 - 40 - 20
0
20
40
60
80
100
V
Temperature (°C)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
5
DG2012
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
10
0
t
V+ = 2 V
ON
45
40
35
30
25
20
15
10
5
LOSS
- 10
- 20
- 30
t
V+ = 3 V
V+ = 2 V
ON
t
OFF
OFF
- 40
- 50
- 60
- 70
OIRR
t
V+ = 3 V
X
TALK
V+ = 5 V
= 50 Ω
t
V+ = 5 V
V+ = 5 V
ON
R
L
t
OFF
- 80
- 90
0
- 60 - 40 - 20
0
20
40
60
80
100
100 K
1 M
10 M
Frequency (Hz)
100 M
1 G
Temperature (°C)
Switching Time vs. Temperature
and Supply Voltage
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
30
20
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V+ = 5 V
10
V+ = 3 V
0
V+ = 2 V
- 10
- 20
- 30
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
V
- Analog Voltage (v)
COM
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
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6
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
DG2012
Vishay Siliconix
TEST CIRCUITS
V+
V+
V
INH
t < 5 ns
t < 5 ns
f
r
Logic
Input
50 %
V
INL
Switch Output
NO or NC
COM
Switch
Input
V
OUT
0.9 x V
OUT
IN
GND
Switch
Output
R
300 Ω
C
L
35 pF
L
0 V
Logic
Input
t
t
OFF
ON
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
C
L
(includes fixture and stray capacitance)
R
L
+ R
V
= V
COM
OUT
R
L
ON
Figure 1. Switching Time
V+
V+
V
Logic
Input
INH
t < 5 ns
t < 5 ns
f
r
V
INL
COM
NO
NC
V
V
V
O
NO
NC
R
L
C
L
V
= V
NC
NO
300 Ω
35 pF
IN
V
90 %
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
V+
V+
ΔV
OUT
R
gen
V
OUT
COM
NC or NO
V
OUT
+
IN
IN
V
gen
V
C = 1 nF
L
On
On
Off
Q = ΔV
GND
x C
OUT
L
= 0 - V+
IN
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
7
DG2012
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0 V, 2.4 V
IN
COM
V
COM
Off Isolation = 20 log
V
R
L
NO/ NC
GND
Analyzer
Figure 4. Off-Isolation
V+
V+
10 nF
COM
Meter
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
NC or NO
GND
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72176.
www.vishay.com
8
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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