BYT41MTAP [VISHAY]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.25A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, DOT30B, 2 PIN;
| 型号： | BYT41MTAP |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.25A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, DOT30B, 2 PIN |
| 文件： | 总4页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT41
Vishay Telefunken
Fast Soft Recovery Rectifier
Features
Controlled avalanche characteristics
Miniature axial leaded
Glass passivated
Hermetically sealed glass envelope
Low reverse current
High reverse voltage
95 10526
Applications
General purpose rectifier
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
50
Unit
V
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
100
200
400
600
800
1000
30
Reverse voltage=
Repetitive peak reverse voltage
V =
R
V
RRM
Peak forward surge current
Average forward current
t =8.3 ms, half sinewave
Lead length l = 10 mm,
T = 25 C
I
A
A
p
FSM
I
1.25
10
FAV
L
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
I
=1A, inductive load
E
R
mJ
C
(BR)R
T =T
–55...+175
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Test Conditions
Symbol
Value
60
110
Unit
K/W
Lead length l = 10 mm, T = constant
L
Junction ambient
R
thJA
on PC board with spacing 25mm
www.vishay.com
1 (4)
Document Number 86024
Rev. 5, 27-Sep-00
BYT41
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I = 1 A
Type
Symbol Min
Typ Max Unit
V
F
1.1
5
V
F
V =V
R
RRM
Reverse current
I
R
A
V =V
, T =150 C
150
R
RRM
j
BYT41A
BYT41B
BYT41D
BYT41G
BYT41J
BYT41K
BYT41M
50
100
200
400
600
800
1000
Reverse breakdown
voltage
I =100 A
R
V
(BR)R
V
Reverse recovery time I =0.5A, I =1A, i =0.25A
t
rr
2
s
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)
120
100
80
60
40
20
0
350
300
250
200
150
100
50
P –Limit
R
@100%V
R
l
l
P –Limit
R
@80%V
R
T =constant
L
0
30
25
50
75
100
125
150
175
0
5
10
15
20
25
16304
T – Junction Temperature ( °C )
j
96 12151
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
1.4
20
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
R
thJA
60K/W
l=10mm
f=1MHz
18
16
14
12
10
8
BYT41M
BYT41A
BYT41A
BYT41M
6
R
thJA
=110K/W
PCB: d=25mm
4
2
0
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature ( °C )
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
16303
T
amb
16305
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
www.vishay.com
2 (4)
Document Number 86024
Rev. 5, 27-Sep-00
BYT41
Vishay Telefunken
1000
100
10
100.000
10.000
1.000
V
= V
RRM
R
T =175°C
j
T =25°C
j
0.100
0.010
1
0.001
25
50
75
100
125
150
175
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
– Forward Voltage ( V )
96 12137
T – Junction Temperature ( °C )
96 12134
V
F
j
Figure 5. Max. Reverse Current vs. Junction Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
Dimensions in mm
95 10524
Standard Glass Case
DOT 30 B
Cathode Identification
Weight max. 0.5g
3 max.
technical drawings
according to DIN
specifications
0.82 max.
26 min.
26 min.
4.2 max.
www.vishay.com
3 (4)
Document Number 86024
Rev. 5, 27-Sep-00
BYT41
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 86024
Rev. 5, 27-Sep-00
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