BYT42B-TR [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 1.25A, 100V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN;
| 型号： | BYT42B-TR |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1.25A, 100V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN 软恢复二极管 快速软恢复二极管 |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT42
Vishay Semiconductors
Fast Soft Recovery Rectifier
Features
Miniature axial leaded
Glass passivated
Hermetically sealed glass envelope
Low reverse current
High reverse voltage
Applications
95 10526
TV and monitor
SMPS
Electronic ballast
Absolute Maximum Ratings
T = 25 C
j
Parameter
Reverse voltage=
Repetitive peak reverse voltage
Test Conditions
Type
Symbol
V =
Value
50
Unit
V
BYT42A
BYT42B
BYT42D
BYT42G
BYT42J
BYT42K
BYT42M
R
V
RRM
100
200
400
600
800
1000
30
Peak forward surge current
Average forward current
t =8.3 ms, half sinewave
Lead length l = 10 mm,
I
A
A
p
FSM
I
1.25
FAV
T = 25 C
L
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
T =T
–55...+175
10
C
j
stg
I
=0.4A
E
R
mJ
(BR)R
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
Symbol
R
thJA
Value
60
Unit
K/W
Lead length l = 10 mm, T = constant
L
on PC board with spacing 25mm
110
www.vishay.com
1 (5)
Document Number 86025
Rev. 4, 10-Aug-00
BYT42
Vishay Semiconductors
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min
Typ Max Unit
Forward voltage
I =1A
V
1.4
5
150
V
F
F
V =V
R
RRM
Reverse current
I
R
A
V =V
, T =150 C
R
RRM
j
BYT42A
BYT42B
BYT42D
BYT42G
BYT42J
BYT42K
BYT42M
50
100
200
400
600
800
1000
Reverse breakdown
voltage
I =100 A
R
V
(BR)R
V
BYT42A–
BYT42J
BYT42K–
BYT42M
150
200
Reverse recovery time I =0.5A, I =1A, i =0.25A
t
rr
ns
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)
120
100
80
60
40
20
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V =V
R
R RM
f
1kHz
110K/W
R
thJA
PC Board
l
l
BYT42A
BYT42M
T =constant
L
30
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature ( °C )
0
5
10
15
20
25
96 12139
T
amb
96 12151
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
www.vishay.com
2 (5)
Document Number 86025
Rev. 4, 10-Aug-00
BYT42
Vishay Semiconductors
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
500
450
400
350
300
250
200
150
100
50
V =V
R
R RM
f
1kHz
R
60K/W
thJA
l=10mm
P –Limit
R
@100%V
R
BYT42A
P –Limit
R
BYT42M
@80%V
R
0
0
20 40 60 80 100 120 140 160 180
– Ambient Temperature ( °C )
25
50
75
100
125
150
175
96 12140
T
amb
16306
T – Junction Temperature ( °C )
j
Figure 6. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
25
1000
V
= V
f=1MHz
R
RRM
20
15
10
5
100
10
1
0
0.1
1.0
V – Reverse Voltage ( V )
R
10.0
100.0
25
50
75
100
125
150
175
16307
96 12141
T – Junction Temperature ( °C )
j
Figure 7. Diode Capacitance vs. Reverse Voltage
Figure 4. Max. Reverse Current vs. Junction Temperature
100.000
10.000
T =175°C
j
1.000
0.100
0.010
0.001
T =25°C
j
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
– Forward Voltage ( V )
96 12138
V
F
Figure 5. Max. Forward Current vs. Forward Voltage
www.vishay.com
3 (5)
Document Number 86025
Rev. 4, 10-Aug-00
BYT42
Vishay Semiconductors
Dimensions in mm
95 10524
Standard Glass Case
DOT 30 B
Weight max. 0.5g
3 max.
technical drawings
according to DIN
specifications
Cathode Identification
0.82 max.
26 min.
26 min.
4.2 max.
www.vishay.com
4 (5)
Document Number 86025
Rev. 4, 10-Aug-00
BYT42
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
5 (5)
Document Number 86025
Rev. 4, 10-Aug-00
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
BYT42BGP
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.25A
GULFSEMI
BYT42BTAP
Rectifier Diode, 1 Phase, 1 Element, 1.25A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, DOT30B, 2 PIN
VISHAY
BYT42D-TR
Rectifier Diode, 1 Phase, 1 Element, 1.25A, 200V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN
VISHAY
BYT42DGP
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.25A
GULFSEMI
BYT42DTAP
Rectifier Diode, 1 Phase, 1 Element, 1.25A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS, DOT30B, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明