BYQ28E-XXX [VISHAY]
Dual Common Cathode Ultrafast Rectifier;
| 型号： | BYQ28E-XXX |
| 厂家： | 
VISHAY |
| 描述： | Dual Common Cathode Ultrafast Rectifier |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Power pack
TO-220AB
ITO-220AB
Available
• Glass passivated pellet chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
3
3
2
2
1
1
BYQ28E, UG10
BYQ28EF, UGF10
PIN 1
PIN 1
PIN 2
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
CASE
PIN 3
PIN 3
• AEC-Q101 qualified
TO-263AB
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
K
2
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters
and polarity protection application.
1
BYQ28EB, UGB10
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, automotive grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
IFSM
trr
100 V to 200 V
55 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
25 ns
VF
0.895 V
150 °C
meets JESD 201 class 2 whisker test
TJ max.
Polarity: As marked
TO-220AB, ITO-220AB,
TO-263AB
Package
Mounting Torque: 10 in-lbs max.
Diode variations
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
UG10BCT
UG10CCT
UG10DCT
PARAMETER
SYMBOL
UNIT
BYQ28E-100 BYQ28E-150 BYQ28E-200
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
100
100
100
150
150
150
10
200
200
200
V
V
V
Maximum DC blocking voltage
total device
per diode
Maximum average forward rectified current at TC = 100 °C
IF(AV)
A
5.0
Peak forward surge current 8.3 ms single half sine-wave
IFSM
IRSM
VC
55
0.2
8
A
A
superimposed on rated load per diode
Non-repetitive peak reverse current per diode at tp = 100 μs
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 k
kV
Operating junction and storage temperature range
TJ, TSTG
VAC
-40 to +150
1500
°C
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 23-Feb-16
Document Number: 88549
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
1.25
1.10
0.895
10
UNIT
IF = 10 A
IF = 5 A
TJ = 25 °C
Maximum instantaneous forward voltage
per diode
(1)
VF
V
TJ = 150 °C
TJ = 25 °C
TJ = 100 °C
Maximum reverse current per diode at
working peak reverse voltage
IR
μA
200
Maximum reverse recovery time per diode IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM
Maximum reverse recovery time per diode IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
trr
25
20
9
ns
ns
Maximum stored charge per diode
IF = 2 A, dI/dt = 20 A/μs, VR = 30 V, Irr = 0.1 IRM
Qrr
nC
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
UG10
UGF10
UGB10
PARAMETER
SYMBOL
UNIT
BYQ28E
BYQ28EF
BYQ28EB
Typical thermal resistance per diode, junction to ambient
Typical thermal resistance per diode, junction to case
RJA
RJC
50
55
50
°C/W
4.5
6.7
4.8
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
BYQ28E-200-E3/45
1.80
1.95
1.77
1.77
1.80
1.95
1.77
1.77
45
45
45
81
45
45
45
81
BYQ28EF-200-E3/45
BYQ28EB-200-E3/45
BYQ28EB-200-E3/81
BYQ28E-200HE3/45 (1)
BYQ28EF-200HE3/45 (1)
BYQ28EB-200HE3/45 (1)
BYQ28EB-200HE3/81 (1)
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
Automotive grade
Revision: 23-Feb-16
Document Number: 88549
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
15
10
5
1000
100
10
TJ = 125 °C
TJ = 100 °C
Resistive or Inductive Load
1
TJ = 25 °C
0.1
0
50
150
0
20
40
60
80
100
0
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
100
10
1
50
TC = 105 °C
8.3 ms Single Half Sine-Wave
at 2 A, 20 A/μs
40
30
20
10
0
at 5 A, 50 A/μs
at 1 A, 100 A/μs
at 5 A, 50 A/μs
at 1 A, 100 A/μs
trr
Qrr
at 2 A, 20 A/μs
10
50
75
125
1
100
25
100
Junction Temperature (°C)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
100
100
Pulse Width = 300 μs
1 % Duty Cycle
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 125 °C
TJ = 100 °C
1
10
0.1
TJ = 25 °C
1
0.1
0.01
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 23-Feb-16
Document Number: 88549
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYQ28E-xxx, BYQ28EF-xxx, BYQ28EB-xxx, UG10xCT, UGF10xCT, UGB10xCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.076 (1.93) REF.
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
7° REF.
0.148 (3.74)
45° REF.
0.113 (2.87)
0.103 (2.62)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.580 (14.73)
PIN
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 23-Feb-16
Document Number: 88549
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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