BYQ28EB [VISHAY]
Dual Ultrafast Soft Recovery Rectifier; 双超快软恢复整流器型号: | BYQ28EB |
厂家: | VISHAY |
描述: | Dual Ultrafast Soft Recovery Rectifier |
文件: | 总3页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Dual Ultrafast Soft Recovery Rectifier
Reverse Voltage 100 to 200V Forward Current 10A
Reverse Recovery Time 20ns
ITO-220AB (BYQ28EF, UGF10 Series)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AB (BYQ28E, UG10 Series)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
2
3
1
0.603 (15.32)
0.573 (14.55)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
1
3
1.148 (29.16)
1.118 (28.40)
0.060 (1.52)
PIN 1
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
PIN 2
PIN 3
0.560 (14.22)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 3
PIN 2
CASE
0.530 (13.46)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.36)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
TO-263AB (BYQ28EB, UGB10 Series)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
Mounting Pad Layout TO-263AB
0.245 (6.22)
MIN
0.42
(10.66)
K
Dimensions in inches
and (millimeters)
0.33
(8.38)
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
0.63
(17.02)
K
1
2
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.027 (0.686)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
0.08
(2.032)
0.12
(3.05)
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.24
(6.096)
0.205 (5.20)
0.195 (4.95)
Features
Mechanical Data
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High reverse energy capability
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Terminals: Plated leads, solderable per
• Excellent high temperature switching
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Glass passivated chip junction
• Soft recovery characteristics
MIL-STD-750, Method 2026
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
Document Number 88549
03-Jul-02
www.vishay.com
1
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
UG10BCT
UG10CCT
UG10DCT
Symbol
VRRM
VRWM
VDC
BYQ28E-100 BYQ28E-150 BYQ28E-200
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
100
100
100
150
150
150
200
200
200
V
Maximum DC blocking voltage
V
Maximum average forward rectified current Total device
10
5
IF(AV)
A
A
at TC = 100°C
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
IFSM
IRRM
VC
TJ, TSTG
IRSM
55
Repetitive peak reverse current per leg at tp = 100µs
0.2
A
KV
°C
A
Electrostatic discharge capacitor voltage,
Human body model: C = 250pF, R = 1.5kΩ
8
–40 to +150
0.2
Operating junction and storage temperature range
Non-repetitive peak reverse current per leg
at tp= 100µs
RMS Isolation voltage (BYQ28EF, UGF types)
from terminals to heatsink with t = 1 second, RH ≤ 30%
4500 (NOTE 1)
3500 (NOTE 2)
1500 (NOTE 3)
VISOL
V
Electrical Characteristics(TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage per leg (Note 4)
at IF = 10A,
at IF = 5A,
at IF = 5A,
TJ = 25°C
TJ = 25°C
TJ = 150°C
1.25
1.10
0.895
VF
V
Maximum reverse current per leg
at working peak reverse voltage (Note 4) TJ = 100°C
TJ = 25°C
10
200
IR
trr
µA
ns
Maximum reverse recovery time per leg at
IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1IRM
25
20
9
Maximum reverse recovery time per leg at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
ns
Maximum stored charge per leg
IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1IRM
Qrr
nC
Thermal Characteristics(TC = 25°C unless otherwise noted)
UG10
UGF10
UGB10
Parameter
Symbol
BYQ28E
BYQ28EF BYQ28EB
Unit
Typical thermal resistance — junction to ambient
— junction to case
RΘJA
RΘJC
50
4.5
55
6.7
50
4.5
°C/W
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
www.vishay.com
2
Document Number 88549
03-Jul-02
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Forward Current Derating Curve
15
100
Resistive or Inductive Load
TC = 105°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
10
5
10
1
0
50
150
0
100
1
10
100
Number of Cycles at 60 HZ
Case Temperature (°C)
Typical Instantaneous
Forward Characteristics Per Leg
Typical Reverse Characteristics Per Leg
1000
100
10
100
10
Pulse Width = 300µs
1% Duty Cycle
TJ = 125°C
100°C
TJ = 125°C
TJ = 100°C
1.0
0.1
0.01
TJ = 25°C
1.0
25°C
0.1
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Reverse Switching
Characteristics Per Leg
Typical Junction Capacitance Per Leg
50
40
30
100
10
1
TJ = 125°C
f = 1.0 MHZ
Vsig = 50mVp-p
@2A, 20A/µs
@5A, 50A/µs
@1A, 100A/µs
@5A, 50A/µs
20
10
@1A, 100A/µs
trr
Qrr
@2A, 20A/µs
0
50
75
125
25
100
0.1
1
10
100
Reverse Voltage (V)
Junction Temperature (°C)
Document Number 88549
03-Jul-02
www.vishay.com
3
相关型号:
BYQ28EB-100-E3/45
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYQ28EB-100-E3/81
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYQ28EB-100-HE3/45
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYQ28EB-100-HE3/81
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYQ28EB-100HE3/45
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYQ28EB-100HE3/81
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
BYQ28EB-150-E3/45
DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明