BYG22A-TR3 [VISHAY]
Ultrafast Avalanche SMD Rectifier; 超快雪崩整流器SMD型号: | BYG22A-TR3 |
厂家: | VISHAY |
描述: | Ultrafast Avalanche SMD Rectifier |
文件: | 总5页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYG22A thru BYG22D
Vishay General Semiconductor
www.vishay.com
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
IFSM
IR
50 V to 200 V
35 A
MECHANICAL DATA
Case: DO-214AC (SMA)
1.0 μA
1.1 V
VF
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
trr
25 ns
ER
20 mJ
TJ max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG22A
BYG22A
50
BYG22B
BYG22B
100
BYG22D
BYG22D
200
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
V
A
2.0
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
35
A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
ER
20
mJ
°C
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150
Revision: 21-Dec-11
Document Number: 88959
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A thru BYG22D
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
BYG22A
BYG22B
BYG22D
UNIT
IF = 1.0 A
IF = 2.0 A
1.0
1.1
1
Maximum instantaneous
forward voltage
(1)
TJ = 25 °C
VF
V
TJ = 25 °C
Maximum reverse current
VR = VRRM
IR
trr
µA
ns
TJ = 100 °C
10
25
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG22A
BYG22B
25
BYG22D
UNIT
Maximum thermal resistance, junction to lead, TL = const.
RJL
°C/W
(1)
RJA
150
(2)
Maximum thermal resistance, junction to ambient
RJA
125
°C/W
(3)
RJA
100
Notes
(1)
Mounted on epoxy-glass hard tissue
Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
BYG22A-E3/TR
0.064
TR
TR3
TR
1800
7500
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
BYG22A-E3/TR3
BYG22AHE3/TR (1)
BYG22AHE3/TR3 (1)
0.064
0.064
0.064
TR3
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
10
2.5
VR = VRRM
Half Sine-Wave
2.0
1.5
1.0
0.5
0
TJ = 150 °C
1
0.1
RθJA ≤ 25 K/W
TJ = 25 °C
RθJA ≤ 125 K/W
0.01
RθJA ≤ 150 K/W
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage (V)
0
20
40
60
80
100
120
140
160
Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Document Number: 88959
Revision: 21-Dec-11
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A thru BYG22D
Vishay General Semiconductor
www.vishay.com
100
10
1
140
120
100
80
TA = 125 °C
VR = VRRM
TA = 100 °C
TA = 75 °C
TA = 50 °C
60
40
TA = 25 °C
20
IR = 0.5 A, iR = 0.125 A
0
25
50
75
100
re (°C)
125
150
0
0.4
0.6
0.8
0.2
1.0
Junction Temperatu
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
50
60
TA = 125 °C
VR = VRRM
50
40
30
20
10
0
TA = 100 °C
40
TA = 75 °C
30
PR - Limit
at 100 % VR
TA = 50 °C
20
PR - Limit
at 80 % VR
TA = 25 °C
10
IR = 0.5 A, iR = 0.125 A
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
70
1000
f = 1 MHz
60
125 K/W DC
50
40
30
20
10
0
100
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
tp/T = 0.02
Single Pulse
tp/T = 0.01
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
101
102
Reverse Voltage (V)
Pulse Length (s)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 8 - Thermal Response
Revision: 21-Dec-11
Document Number: 88959
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A thru BYG22D
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Dec-11
Document Number: 88959
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号:
BYG22AHM3/TR
DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
VISHAY
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