BS123 [VISHAY]

DMOS Transistors (N-Channel); DMOS晶体管（ N沟道）


型号：	BS123
厂家：	VISHAY
描述：	DMOS Transistors (N-Channel) DMOS晶体管（ N沟道）晶体晶体管
文件：	总2页 (文件大小：41K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BS123

DMOS Transistors (N-Channel)

FEATURES

TO-92

.142 (3.6)

.181 (4.6)

♦

High input impedance

Low gate threshold voltage

Low drain-source ON resistance

High-speed switching

No minority carrier storage time

CMOS logic compatible input

No thermal runaway

No secondary breakdown

.022 (0.55)

.098 (2.5)

max

MECHANICAL DATA

Case: TO-92 Plastic Package

Weight: approx. 0.18 g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Value

Unit

Drain-Source Voltage

DSS

Drain-Gate Voltage

DGS

Gate-Source Voltage (pulsed)

±20

Drain Current (continuous) at T ¹⁾= 25 °C, at T ²⁾= 50 °C

1.1

amb

Power Dissipation at T ¹⁾= 25 °C, at T ²⁾= 50 °C

830¹⁾

150

°C

amb

tot

Junction Temperature

Storage Temperature Range

–65 to +150

¹⁾Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).

4/98

BS123

ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

Min.

Typ.

Max.

–

Unit

Drain-Source Breakdown Voltage

at I = 100 A, V = 0 V

(BR)DSS

Gate-Body Leakage Current, Forward

at V = 20 V, V = 0 V

–

500

250

GSSF

GSF

Gate-Body Leakage Current, Reverse

at V = 20 V, V = 0 V

–

GSSR

GSR

Drain Cutoff Current

at V = 60 V, V = 0 V

–

DSS

Gate-Source Threshold Voltage

at V = V , I = 250 A

1.5

0.3

GS(th)

DS D

Drain-Source ON Resistance

0.4

Ω

DS(on)

at V = 10 V, I = 600 mA

Capacitance

at V = 25 V, V = 0 V, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

–

350

150

–

iSS

OSS

rSS

Switching Times

at V = 10 V, V = 10 V, R = 100

Ω

Tur n-On Tim e

Turn-Off Time

–

100

–

off

Thermal Resistance Junction to Ambient Air

thJA

–

150¹⁾

K/W

¹⁾Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92).

Inverse Diode

Symbol

Value

1.1

Unit

Max. Forward Current (continuous)

at T = 25 °C

amb

Forward Voltage Drop (typ.)

at V = 0 V, I = 1.1 A, T = 25 °C

相关型号：

BS128F1C-13

MEMORY CARD 128K SRAM

ETC