BAW27 [VISHAY]

Silicon Epitaxial Planar Diode; 硅外延平面二极管
BAW27
型号: BAW27
厂家: VISHAY    VISHAY
描述:

Silicon Epitaxial Planar Diode
硅外延平面二极管

二极管
文件: 总3页 (文件大小:38K)
中文:  中文翻译
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BAW27  
Vishay Telefunken  
Silicon Epitaxial Planar Diode  
Features  
Low forward voltage drop  
High forward current capability  
Applications  
94 9367  
High speed switch and general purpose use in com-  
puter and industrial applications  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Test Conditions  
Type  
Symbol  
V
RRM  
Value  
75  
60  
Unit  
V
V
V
R
Peak forward surge current  
Forward current  
Average forward current  
Power dissipation  
t =1 s  
I
4
600  
300  
440  
500  
200  
A
p
FSM  
I
F
mA  
mA  
mW  
mW  
C
V =0  
I
R
FAV  
l=4mm, T =45 C  
l=4mm, T 25 C  
P
P
L
V
L
V
Junction temperature  
T
j
Storage temperature range  
T
stg  
–65...+200  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=4mm, T =constant  
Symbol  
R
thJA  
Value  
350  
Unit  
K/W  
L
Document Number 85548  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  
BAW27  
Vishay Telefunken  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =10mA  
Type  
Symbol Min  
Typ Max Unit  
V
F
V
F
V
F
V
F
0.67 0.75  
0.8 0.85  
0.95 1.0  
1.12 1.25  
100  
V
V
V
V
nA  
A
F
I =50mA  
F
I =200mA  
F
I =400mA  
F
Reverse current  
V =60V  
I
I
R
R
V =60V, T =100 C  
50  
R
j
R
Breakdown voltage  
Diode capacitance  
Reverse recovery time I =I =10...100mA, i =0.1xI  
I =5 A, t /T=0.01, t =0.3ms  
V
(BR)  
75  
V
pF  
ns  
R
p
p
V =0, f=1MHz, V =50mV  
C
D
t
rr  
4
6
R
HF  
F
R
R
R
Dimensions in mm  
Cathode Identification  
0.55 max.  
technical drawings  
according to DIN  
specifications  
1.7 max.  
94 9366  
Standard Glass Case  
54 A 2 DIN 41880  
JEDEC DO 35  
26 min.  
3.9 max.  
26 min.  
Weight max. 0.3g  
www.vishay.de FaxBack +1-408-970-5600  
2 (3)  
Document Number 85548  
Rev. 2, 01-Apr-99  
BAW27  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85548  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
3 (3)  

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