BAW56 [VISHAY]
Dual Surface Mount Switching Diode; 双表面贴装开关二极管
| 型号： | BAW56 |
| 厂家： | 
VISHAY |
| 描述： | Dual Surface Mount Switching Diode |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAW56
Vishay Telefunken
Dual Surface Mount Switching Diode
Features
Fast switching speed
High conductance
Surface mount package ideally suited for
automatic insertion
Common anode
94 8550
Absolute Maximum Ratings
T = 25 C
j
Parameter
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Test Conditions
Symbol
V
RM
Value
100
70
Unit
V
V
V
RRM
=V
RWM
=V
R
FSM
FSM
Peak forward surge current
t =1s
t =1 s
p
I
I
1
4.5
150
A
A
mA
p
Average forward current
half wave rectification with resistive
load and f ≥ 50 MHz, on ceramic
substrate10mmx8mmx0.7mm
I
FAV
Forward current
on ceramic substrate
8mmx10mmx0.7mm
on ceramic substrate
8mmx10mmx0.7mm
I
250
300
mA
mW
C
F
Power dissipation
P
tot
Junction and storage
temperature range
T =T
–55...+150
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on ceramic substrate
8mmx10mmx0.7mm
Symbol
R
thJA
Value
430
Unit
K/W
Document Number 85549
Rev. 2, 17-Mar-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BAW56
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Symbol Min
Typ Max Unit
Forward voltage
I =1mA
V
V
V
V
715
855
1
1.25
2.5
50
mV
mV
V
V
A
F
F
F
F
F
I =10mA
F
I =50mA
F
I =150mA
F
Reverse current
V =70V
I
I
I
R
R
V =70V, T =150 C
A
A
R
j
R
R
V =25V, T =150 C
R
30
j
Diode capacitance
Reverse recovery time I =10mA to I =1mA, V =6V, R =100
V =0, f=1MHz
C
t
rr
1.5
6
pF
ns
R
D
F
R
R
L
Characteristics (Tj = 25 C unless otherwise specified)
1000
100
T =100°C
j
10
1
T =25°C
j
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V – Forward Voltage ( V )
14356
F
Figure 1. Forward Current vs. Forward Voltage
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2 (4)
Document Number 85549
Rev. 2, 17-Mar-99
BAW56
Vishay Telefunken
Dimensions in mm
top view
14371
Case: SOT23, plastic
Terminals: Solderable per MIL–STD–202, Method 208
Polarity: see diagram
Marking: KJD
Approx. weight: 0.008 grams
Document Number 85549
Rev. 2, 17-Mar-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BAW56
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85549
Rev. 2, 17-Mar-99
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