BAT54WS-G3-08 [VISHAY]
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, GREEN PACKAGE-2;
| 型号： | BAT54WS-G3-08 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, GREEN PACKAGE-2 光电二极管 |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT54WS-G
Vishay Semiconductors
www.vishay.com
Small Signal Schottky Diode
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
DESIGN SUPPORT TOOLS click logo to get started
• AEC-Q101 qualified available
(part number on request)
Models
• Base P/N-G3 - green, commercial grade
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
BAT54WS-G
BAT54WS-G3-08 or BAT54WS-G3-18
Single
L8
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VRRM
IF
IFRM
IFSM
VALUE
30
200
300
600
UNIT
V
mA
mA
mA
mW
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Surge forward current (1)
Power dissipation (1)
tp < 1 s
Ptot
150
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
650
125
-65 to +150
-55 to +125
UNIT
K/W
°C
°C
°C
(1)
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
Operating temperature range
Tstg
Top
Note
(1)
Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Tested with 100 μA pulses
VR = 25 V
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
μA
Reverse breakdown voltage
Leakage current (1)
V(BR)
IR
30
2
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
VF
VF
VF
VF
VF
CD
240
320
400
500
800
10
mV
mV
mV
mV
mV
pF
Forward voltage (1)
IF = 100 mA
VR = 1 V, f = 1 MHz
IF = 10 mA, IR = 10 mA,
Diode capacitance
Reserve recovery time
trr
5
ns
i
R = 1 mA, RL = 100 Ω
Note
(1)
Pulse test; tp < 300 μs, θ < 2 %
Rev. 1.3, 02-Jun-17
Document Number: 85241
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54WS-G
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
T = 125 °C
j
100
10
- 40 °C
1
25 °C
0.1
0.01
0.6
1.2 1.4
0
0.2 0.4
0.8
1
18867
VF - Forward Voltage (V)
Fig. 1 - Typical Forward Current vs. Forward Voltage
vs. Various Temperatures
14
12
10
8
6
4
2
0
0
4
8
12
16
20
24
28
18868
VR - Reverse Voltage (V)
Fig. 2 - Typical Capacitance vs. Reverse Applied Voltage
1000
T = 125 °C
j
100
10
1
100 °C
75 °C
50 °C
25 °C
0.1
0.01
0
5
10
15
20
25
30
VR - Reverse Voltage (V)
18869
Fig. 3 - Typical Reverse Current vs. Reverse Voltage
vs. Various Temperatures
Rev. 1.3, 02-Jun-17
Document Number: 85241
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54WS-G
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
1.60 [0.063]
Cathode bar
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
0.8 [0.031]
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 1.3, 02-Jun-17
Document Number: 85241
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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