BAT54WS-V_10 [VISHAY]
Small Signal Schottky Diode; 小信号肖特基二极管型号: | BAT54WS-V_10 |
厂家: | VISHAY |
描述: | Small Signal Schottky Diode |
文件: | 总5页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAT54WS-V
Vishay Semiconductors
Small Signal Schottky Diode
Features
• These diodes feature very low turn-on
voltage and fast switching
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• AEC-Q101 qualified
20145
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10k per 13" reel (8 mm tape), 10k/box
GS08/3k per 7" reel (8 mm tape), 15k/box
Parts Table
Part
Ordering code
Type marking
L4
Remarks
BAT54WS-V
BAT54WS-V-GS18 or BAT54WS-V-GS08
Tape and reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VRRM
Value
30
Unit
V
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
200 1)
300 1)
600 1)
150 1)
IF
mA
IFRM
IFSM
Ptot
mA
mA
mW
tp < 1 s
Power dissipation 1)
Note
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
Unit
K/W
°C
650 1)
125
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
Tj
Tstg
- 65 to + 150
°C
Note
1) Valid provided that electrodes are kept at ambient temperature
Document Number 85667
Rev. 1.5, 05-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BAT54WS-V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
V(BR)
Min.
30
Typ.
Max.
Unit
V
Reverse breakdown voltage
Leakage current 1)
tested with 100 µA pulses
VR = 25 V
IR
VF
VF
VF
VF
VF
CD
trr
2
µA
mV
mV
mV
mV
mV
pF
IF = 0.1 mA
240
320
400
500
800
10
IF = 1 mA
Forward voltage 1)
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 1 V, f = 1 MHz
IF = IR = 10 mA; IR = 1 mA; RL = 100 Ω
Diode capacitance
Reverse recovery time
5
ns
Note
1) Pulse test: tp < 300 µs, θ < 2 %
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
1000
100
10
T = 125 °C
j
T = 125 °C
j
100
10
1
100 °C
- 40 °C
75 °C
50 °C
1
25 °C
25 °C
0.1
0.01
0.1
0.01
0.6
1.2 1.4
0
0.2 0.4
0.8
1
0
5
10
15
20
25
30
18867
VF - Forward Voltage (V)
VR - Reverse Voltage (V)
18869
Figure 1. Typical Forward Current vs. Forward Voltage
vs. Various Temperatures
Figure 3. Typical Reverse Current vs. Reverse Voltage
vs. Various Temperatures
14
12
10
8
6
4
2
0
0
4
8
12
16
20
24
28
18868
VR - Reverse Voltage (V)
Figure 2. Typical Capacitance vs. Reverse Applied Voltage
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For technical questions within your region, please contact one of the following: Document Number 85667
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.5, 05-Aug-10
BAT54WS-V
Vishay Semiconductors
Package Dimensions in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
Document Number 85667
Rev. 1.5, 05-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
SOD323
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches)
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Mounting pad layout
0.6 (0.024)
0.6 (0.024)
Cathode bar
1.6 (0.063)
2.85 (0.112)
2.50 (0.098)
Created - Date: 24. August. 2004
Rev. 04 - Date: 23. Sep .2009
Document no.: S8-V-3910.02-001 (4)
17443
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24
For technical questions, contact: EMI-filter@vishay.com
Document Number: 84018
Rev. 1.3, 12-Jan-07
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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