BAS16 [VISHAY]
Silicon Epitaxial Planar Diode; 硅外延平面二极管![BAS16](http://pdffile.icpdf.com/pdf1/p00073/img/icpdf/BAS16_381500_icpdf.jpg)
型号: | BAS16 |
厂家: | ![]() |
描述: | Silicon Epitaxial Planar Diode |
文件: | 总4页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BAS16
Vishay Telefunken
Silicon Epitaxial Planar Diode
Features
Ultra fast switching speed
Surface mount package ideally
suited for automatic insertion
High conductance
94 8550
Absolute Maximum Ratings
T = 25 C
j
Parameter
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Test Conditions
Symbol
V
RM
Value
100
75
Unit
V
V
V
RRM
=V
RWM
=V
R
FSM
FSM
Peak forward surge current
t =1s
t =1 s
p
I
I
1
2
A
A
p
Average forward current
half wave rectification with resistive
load and f ≥ 50 MHz, on ceramic
substrate 8mmx10mmx0.7mm
I
150
mA
FAV
Forward current
on ceramic substrate
8mmx10mmx0.7mm
on ceramic substrate
8mmx10mmx0.7mm
I
300
350
mA
mW
C
F
Power dissipation
P
tot
Junction and storage
temperature range
T =T
–55...+150
j
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
on ceramic substrate
8mmx10mmx0.7mm
Symbol
R
thJA
Value
357
Unit
K/W
Document Number 85539
Rev. 1, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BAS16
Vishay Telefunken
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Symbol Min
Typ Max Unit
Forward voltage
I =1mA
V
V
V
V
715
855
1
1.25
1
50
30
4
mV
mV
V
V
A
A
A
pF
ns
F
F
F
F
F
I =10mA
F
I =50mA
F
I =150mA
F
Reverse current
V =75V
I
I
I
R
R
V =75V, T =150 C
R
j
R
R
V =25V, T =150 C
R
j
Diode capacitance
Reverse recovery time I =10mA to I =1mA, V =6V, R =100
V =0, f=1MHz
R
C
D
t
rr
6
F
R
R
L
Characteristics (Tj = 25 C unless otherwise specified)
1000
10000
1000
100
10
V
= 20 V
R
100
10
T =100°C
j
T =25°C
j
1
0.1
0.01
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
– Forward Voltage ( V )
0
25 50 75 100 125 150 175 200
T – Junction Temperature ( °C )
14356
V
14357
F
j
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85539
Rev. 1, 01-Apr-99
BAS16
Vishay Telefunken
Dimensions in mm
top view
14370
Case: SOT23, plastic
Terminals: Solderable per MIL–STD–202, Method 208
Polarity: cathode band
Marking: KA6
Approx. weight: SOT23 0.008 grams
Document Number 85539
Rev. 1, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
3 (4)
BAS16
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
4 (4)
Document Number 85539
Rev. 1, 01-Apr-99
相关型号:
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BAS16-02L-E6327
Rectifier Diode, 1 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, LEADLESS, TSLP-2-1, 2 PIN
INFINEON
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