BAS16-02W [INFINEON]
Silicon Switching Diode Preliminary data (For high-speed switching applications); 硅开关二极管的初步数据（对于高速开关应用）
| 型号： | BAS16-02W |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode Preliminary data (For high-speed switching applications) |
| 文件： | 总3页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS 16-02W
Silicon Switching Diode
Preliminary data
• For high-speed switching applications
2
1
VES05991
Type
Marking
Ordering Code
Pin Configuration
Package
BAS 16-02W
3
Q62702-A1239
1 = A
2 = C
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
Peak reverse voltage
Forward current
75
V
V
V
R
85
RM
250
2.5
100
150
mA
A
I
I
F
Surge forward current, t = 1 µs
FS
mW
°C
Total power dissipation, T = 119 °C
P
T
T
S
tot
j
Junction temperature
Storage temperature
- 65 ...+150
stg
Semiconductor Group
Semiconductor Group
1
Jul-24-1998
1998-11-01
1
BAS 16-02W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
Breakdown voltage
75
-
-
V
V
V
(BR)
F
I
= 100 µA
(BR)
Forward voltage
I = 1 mA
mV
-
-
-
-
-
715
855
F
I = 10 mA
-
-
F
I = 50 mA
1000
1250
F
I = 150 mA
-
F
Reverse current
-
-
1
µA
nA
I
I
R
V = 70 V
R
Reverse current
R
V = 25 V, T = 150 °C
-
-
-
30
50
R
A
V = 75 V, T = 150 °C
-
-
R
A
Forward recovery voltage
I = 10 mA, t = 20 ns
-
1.75 V
V
fr
F
p
AC characteristics
Diode capacitance
-
-
-
-
2
6
pF
C
D
V = 0 V, f = 20 MHz
R
Reverse recovery time
ns
t
rr
I = 10 mA, I = 10 mA, R = 100 Ω,
F
R
L
measured at I = 1mA
R
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00016
Pulse generator: t = 100ns, D = 0.05,
Oscillograph: R = 50Ω, t = 0.35ns,
p
r
t = 0.6ns, R = 50Ω
C ≤ 1pF
r
i
Semiconductor Group
Semiconductor Group
2
Jul-24-1998
1998-11-01
2
BAS 16-02W
Forward current I = f V )
Reverse current I = f (T )
F
F
R
A
T = 25°C
A
BAS 16
EHB00022
BAS 16
EHB00023
10 5
nA
150
mA
ΙR
Ι F
VR = 70 V
10 4
5
max.
100
50
0
70 V
typ
max
10 3
5
25 V
typ.
50
102
5
101
0
0.5
1.0
V
1.5
0
100
150
C
TA
VF
Forward voltage V = f (T )
F
A
BAS 16
EHB00025
1.0
V
VF
Ι
F = 100 mA
10 mA
1 mA
0.5
0.1 mA
0
0
50
100
150
C
TA
Semiconductor Group
Semiconductor Group
3
Jul-24-1998
1998-11-01
3
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