BAS16-03W [INFINEON]
Silicon Switching Diode Preliminary data (For high-speed switching applications); 硅开关二极管的初步数据（对于高速开关应用）
| 型号： | BAS16-03W |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode Preliminary data (For high-speed switching applications) |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS 16-03W
Silicon Switching Diode
Preliminary data
• For high-speed switching applications
2
1
VPS05176
Type
Marking
Ordering Code
Pin Configuration
Package
BAS 16-03W
B
Q62702-A1231
1 = A
2 = C
SOD-323
Maximum Ratings
Parameter
Symbol
Value
Unit
75
85
V
Diode reverse voltage
Peak reverse voltage
Forward current
V
V
R
RM
250
4.5
250
150
mA
A
I
I
F
Surge forward current, t = 1 µs
FS
mW
°C
Total power dissipation, T = 111 °C
P
T
T
S
tot
j
Junction temperature
Storage temperature
- 65 ...+150
stg
Thermal Resistance
1)
Junction - ambient
R
R
≤ 235
≤ 155
K/W
thJA
thJS
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Mar-13-1998
1998-11-01
Semiconductor Group
1
BAS 16-03W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
75
-
-
V
Breakdown voltage
V
V
(BR)
F
I
= 100 µA
(BR)
Forward voltage
I = 1 mA
mV
-
-
-
-
-
-
-
-
715
855
F
I = 10 mA
F
I = 50 mA
1000
1250
F
I = 150 mA
F
Reverse current
I
I
-
-
1
µA
R
V = 70 V
R
Reverse current
R
V = 25 V, T = 150 °C
-
-
-
-
30
50
R
A
V = 75 V, T = 150 °C
R
A
Forward recovery voltage
I = 10 mA, t = 20 ns
V
-
-
1.75 V
fr
F
p
AC characteristics
-
-
-
-
2
6
pF
Diode capacitance
C
D
V = 0 V, f = 20 MHz
R
ns
Reverse recovery time
t
rr
I = 10 mA, I = 10 mA, R = 100 Ω,
F
R
L
measured at I = 1mA
R
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00017
Pulse generator: t = 100ns, D = 0.05,
Oscillograph: R = 50Ω, t = 0.35ns,
p
r
t = 0.6ns, R = 50Ω
C ≤ 1pF
r
i
Semiconductor Group
Semiconductor Group
2
Mar-13-1998
1998-11-01
2
BAS 16-03W
Forward current I = f (T *;T )
Reverse current I = f (T )
F
A
S
R
A
* Package mounted on epoxy
BAS 16
EHB00022
BAS 16
EHB00021
10 5
nA
300
ΙR
Ι F
VR = 70 V
mA
10 4
5
max.
200
70 V
10 3
5
TA
TS
25 V
100
typ.
50
102
5
101
0
0
50
100
C
150
0
100
150
C
TA ;TS
TA
Forward current I = f V )
Peak forward current I = f (t)
FM
F
F
T = 25°C
T = 25°C
A
A
BAS 16
EHB00024
10 2
BAS 16
EHB00023
150
mA
D = 0.005
0.01
Ι FM
A
Ι F
0.02
0.05
10 1
0.1
0.2
100
50
0
10 0
10-1
10-2
typ
max
tp
tp
T
D =
10-4
T
10-2
10-6
10-5
10-3
10-1 s 100
t
0
0.5
1.0
V
1.5
VF
Semiconductor Group
Semiconductor Group
3
Mar-13-1998
1998-11-01
3
BAS 16-03W
Forward voltage V = f (T )
F
A
BAS 16
EHB00025
1.0
V
VF
Ι
F = 100 mA
10 mA
1 mA
0.5
0.1 mA
0
0
50
100
150
C
TA
Semiconductor Group
Semiconductor Group
4
Mar-13-1998
1998-11-01
4
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