60CPQ150PBF_12 [VISHAY]
Schottky Rectifier, 2 x 30 A; 肖特基整流器, 2× 30 A型号: | 60CPQ150PBF_12 |
厂家: | VISHAY |
描述: | Schottky Rectifier, 2 x 30 A |
文件: | 总7页 (文件大小:171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
FEATURES
Base
common
cathode
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
2
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
1
3
Anode
Anode
2
TO-247AC
2
1
• Compliant to RoHS Directive 2002/95/EC
Common
cathode
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
TO-247AC
2 x 30 A
150 V
DESCRIPTION
IF(AV)
The VS-60CPQ150... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
VR
VF at IF
0.67 V
IRM max.
TJ max.
Diode variation
25 mA at 125 °C
175 °C
Common cathode
EAS
0.5 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
60
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
2300
A
VF
30 Apk, TJ = 125 °C (per leg)
Range
0.67
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-60CPQ150PbF VS-60CPQ150-N3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
150
150
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
30
60
IF(AV)
50 % duty cycle at TC = 151 °C, rectangular waveform
per device
A
Maximum peak one cycle non-repetitive
surge current per leg
5 µs sine or 3 µs rect. pulse
2300
Following any rated load
condition and with rated
IFSM
V
RRM applied
10 ms sine or 6 ms rect. pulse
510
0.5
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 1 A, L = 1 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
Revision: 31-Aug-11
Document Number: 94238
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TYP.
0.80
0.93
0.64
0.74
10
MAX. UNITS
30 A
0.83
TJ = 25 °C
60 A
0.99
V
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
30 A
0.67
TJ = 125 °C
60 A
0.77
TJ = 25 °C
TJ = 125 °C
100
25
μA
mA
pF
Maximum reverse leakage current per leg
See fig. 2
IRM
VR = Rated VR
12
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
-
820
7.5
-
nH
dV/dt
-
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
DC operation
See fig. 4
0.8
0.4
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.25
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
Case style TO-247AC (JEDEC)
60CPQ150
Revision: 31-Aug-11
Document Number: 94238
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 175 °C
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
1
140
0
20
40
60
80 100 120
160
0
0.5
1.0
1.5
2.0
2.5
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
100
0
20
40
60
80 100
140 160
120
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
PDM
t1
0.1
D = 0.75
t2
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
Single pulse
(thermal resistance)
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 31-Aug-11
Document Number: 94238
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
30
180
170
160
150
140
130
120
D = 0.20
D = 0.25
D = 0.33
25
DC
D = 0.50
20
RMS limit
D = 0.75
15
10
5
Square wave (D = 0.50)
80 % rated VR applied
DC
See note (1)
0
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 31-Aug-11
Document Number: 94238
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPQ150PbF, VS-60CPQ150-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
Q
150 PbF
1
2
3
4
5
6
7
-
-
-
Vishay Semiconductors product
Current rating (60 = 60 A)
1
2
3
Circuit configuration:
C = Common cathode
Package:
-
4
P = TO-247
-
-
-
Schottky “Q” series
5
6
7
Voltage code (150 = 150 V)
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-60CPQ150PbF
VS-60CPQ150-N3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
25
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com/doc?95007
TO-247AC PbF
TO-247AC -N3
Part marking information
Revision: 31-Aug-11
Document Number: 94238
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
Document Number: 91000
1
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